Copper-diamond composite substrates for electronic components

2019

Relative to ceramic heat spreaders, CVD diamond delivers greater benefits for a diverse range of applications and industries [1]. For semiconductor packaging applications, the thermal conductivity of CVD diamond heat spreaders is far superior to any other material available. Significant improvements in thermal management of electronic systems can be realized by using CVD diamond heat spreaders. Integration is relatively straightforward, as CVD diamond can be a direct replacement for aluminum nitride (AlN), beryllium oxide (BeO), or other advanced ceramics and refractory metal/copper matrix.

Journal of Microelectronics and Electronic Packaging, 2014

With increasing power loss of electrical components, thermal performance of an assembled device becomes one of the most important quality factors in electronic packaging. Due to rapid advances in semiconductor technology, particularly in the field of high-power components, the temperature distribution inside of a component is a critical parameter of long-term reliability and must be carefully considered during the design phase. Two main drivers in the electronics industry are miniaturization and reliability. Whereas there is a continuous improvement concerning miniaturization of conductor tracks (i.e., lines and spaces have been reduced continuously over the past years), miniaturization of the circuit carrier itself, however, has mostly been limited to decreased layer counts and base material thickness. This can lead to significant component temperature increase and thence to accelerated system degradation. Enhancement of the system reliability is directly connected to an efficient ...

Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT), 2011

Digital silicon carbide integrated circuits provide enhanced functionality for electronics in geothermal, aircraft and other high temperature applications. A multilayer thin film substrate technology has been developed to interconnect multiple SiC devices along with passive components. The conductor is vacuum deposited Ti/Ti:W/Au followed by an electroplated Au. A PECVD silicon nitride is used for the interlayer dielectric. Adhesion testing of the conductor and the dielectric was performed as deposited and after aging at 320°C. The electrical characteristics of the dielectric as a function of temperature were measured. Thermocompression flip chip bonding of Au stud bumped SiC die was used for electrical connection of the digital die to the thin film substrate metallization. Since polymer underfills are not compatible with 300°C operation, AlN was used as the base ceramic substrate to minimize the coefficient of thermal expansion mismatch between the SiC die and the substrate. Initia...

International Symposium on Microelectronics, 2019

Alumina and aluminum nitride substrates are routinely used in micro-electronic packaging where large quantity of heat needs to be dissipated, such as in LED packaging, high power electronics and laser packaging. Heat management in high power electronics or LED's is crucial for their lifespan and reliability. The ever-increasing need for higher power keeps challenging the packaging engineers to become more sophisticated in their packaging. With the availability of a 40 μm thick, high thermal conductivity ribbon alumina from Corning, the options available for packaging engineers has widened. This product has very high dielectric breakdown (~10kV at 40 μm thick), high thermal conductivity (>36 W/mK) and is rugged enough to be handled (with components attached) during packaging. These characteristics make ribbon alumina a cost-effective alternative to incumbent materials such as thick aluminum nitride, for use in high power microelectronics packaging. In this paper, high power LE...

Journal of Vacuum …, 2002

3rd IEEE International Conference on Adaptive Science and Technology (ICAST 2011), 2011

The concern about thermal performance of microelectronics is on the increase due to recent over-heating induced failures which have led to product recalls. Removal of excess heat from microelectronic systems with the use of heat sinks could improve thermal efficiency of the system. This paper investigates the effect of change in heat sink geometry on thermal performance of aluminium and copper heat sinks in microelectronics. Numerical studies on thermal conduction through an electronic package comprising a heat sink, chip, and thermal interface material were carried out. The thickness of the heat sink base and the height of the heat sink fins were varied in the study. The minimum and maximum temperatures of aluminium and copper heat sinks in the two models were investigated using steady state thermal conduction analysis. Better heat dissipation occurred in thinner base thickness and extended fins height for both aluminium and copper heat sinks. Aluminium heat sink recorded the lowest minimum temperatures in both investigations and is recommended as optimal thermal management material for heat sink production.

IEEE Transactions on Components and Packaging Technologies, 2002

This paper presents a thermal modeling for power management of a new three-dimensional (3-D) thinned dies stacking process. Besides the high concentration of power dissipating sources, which is the direct consequence of the very interesting integration efficiency increase, this new ultra-compact packaging technology can suffer of the poor thermal conductivity (about 700 times smaller than silicon one) of the benzocyclobutene (BCB) used as both adhesive and planarization layers in each level of the stack. Thermal simulation was conducted using three-dimensional (3-D) FEM tool to analyze the specific behaviors in such stacked structure and to optimize the design rules. This study first describes the heat transfer limitation through the vertical path by examining particularly the case of the high dissipating sources under small area. First results of characterization in transient regime by means of dedicated test device mounted in single level structure are presented. For the design optimization, the thermal draining capabilities of a copper grid or full copper plate embedded in the intermediate layer of stacked structure are evaluated as a function of the technological parameters and the physical properties. It is shown an interest for the transverse heat extraction under the buffer devices dissipating most the power and generally localized in the peripheral zone, and for the temperature uniformization, by heat spreading mechanism, in the localized regions where the attachment of the thin die is altered. Finally, all conclusions of this analysis are used for the quantitative projections of the thermal performance of a first demonstrator based on a three-levels stacking structure for space application.

2013

The increase of electric power demand for embedded systems requires more efficient power electronics modules (power converters, rectifiers ...). A solution to reach this goal relates to the use of high gap electronic chips as diamond-based components that allow high voltage and current density. The induced module design obviously sorely increases the maximum thermal and thermomechanical stresses in the packaged modules. In this work, we carry out experimental and numerical investigations of two types of high temperature silver connections elaborated at low temperatures by means diffusion heat treatment and by sintering. Mechanical behaviour of the junction is characterized by shear tests. At last, numerical simulations are used to simulate process and services thermal cycles and to assess stresses level at several stages of the assembly service life. All testing and simulation works allow validating the accuracy of the two kinds of connections and demonstrating their interest.

UNICROSS JOURNAL OF SCIENCE AND TECHNOLOGY, UJOST, 2024

Most electronic components whose duties are attracted to maximum power efficiency required of a system to dissipate internal heat out of such components. MOSFETs, CMOS and special Processors, whose applications geared towards high voltages must have a system to effectively dissipate heat for maximum performance. Components with embedded heat sink have advantage and function effectively, the fact remain that the heat sink material is that which can dissipates heat during conduction of heat from the component. This paper considered various heat sink materials for proper heat transfer, radiation and dissipation. Aluminum, Copper, tungsten and Zinc were evaluated having various thermal conductivity and dissipation, and briefly heat-sink materials characteristics: weight, conductivity and quick thermal dissipation of heat from the heatsink materials were discussed. And was observed that Aluminum heat sink material was more preferable during our evaluation and it was observed that the material is best for our modern day's high thermal components. Aluminum heat sink materials have a nomenclature of quick heat transfer, lighter in weight, Aluminum material is stability since thermal condition increases during high performance of the equipment, though some materials from the analysis have high conductivity but their weight and their radiation efficiency can affect the components which is firmly attached to it, considering new innovation in technology is revolving toward miniaturization of component sizes.