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Fig.5 (a) Simplified geometry of the MOSFET channel region, with gate-induced bulk depletion region and the pn-junction depletion regions. (b) Close-up view of the drain diffusion edge. -Xas, Xap Tepresent the depth of depletion regions at source and drain as results of pn junction, respectively.

Figure 5 (a) Simplified geometry of the MOSFET channel region, with gate-induced bulk depletion region and the pn-junction depletion regions. (b) Close-up view of the drain diffusion edge. -Xas, Xap Tepresent the depth of depletion regions at source and drain as results of pn junction, respectively.

Related Figures (8)

Key words: MOSFET parameters, threshold voltage, body effect, enhancement-type NMOS, doped density, short: channel, narrow-channel. Fig.1 The physical structure of an n-channel enhancement-type MOSFET: (a) perspective view; (b) cross-section. Abstract: The aim of this paper is to research the impact of physical parameters which characterize the MOSFET transistors structure on the threshold voltage value. It is also analysed the role of substrate (the body effect) on the threshold voltage. The MOSFET threshold voltage value will have influence in the dynamic and static work regime (mode) of device. Based on the results obtained we can further see impact of each single physical parameter on the total value of threshold voltage. Moreover we can see which of these parameters will have significant and small impact on the threshold voltage. Hence, considering we can adjust the values of MOSFET physical parameters to reach the accepted threshold voltage.
Key words: MOSFET parameters, threshold voltage, body effect, enhancement-type NMOS, doped density, short: channel, narrow-channel. Fig.1 The physical structure of an n-channel enhancement-type MOSFET: (a) perspective view; (b) cross-section. Abstract: The aim of this paper is to research the impact of physical parameters which characterize the MOSFET transistors structure on the threshold voltage value. It is also analysed the role of substrate (the body effect) on the threshold voltage. The MOSFET threshold voltage value will have influence in the dynamic and static work regime (mode) of device. Based on the results obtained we can further see impact of each single physical parameter on the total value of threshold voltage. Moreover we can see which of these parameters will have significant and small impact on the threshold voltage. Hence, considering we can adjust the values of MOSFET physical parameters to reach the accepted threshold voltage.
From Fig.2 and Fig.3, based on acquired values we can see influence of ¢,,, N, and N,, in values of threshold voltage. For larger value of each parameter: tox, or Ny the value of threshold voltage will increase.
From Fig.2 and Fig.3, based on acquired values we can see influence of ¢,,, N, and N,, in values of threshold voltage. For larger value of each parameter: tox, or Ny the value of threshold voltage will increase.
Fig.7 The dependence of the AVio on Np (source and drain doping density), when Na=10'°cm”, L=1ym, tox=20nm, xj=lum and Vps=0V.
Fig.7 The dependence of the AVio on Np (source and drain doping density), when Na=10'°cm”, L=1ym, tox=20nm, xj=lum and Vps=0V.
Fig.6 The dependence of the AV, on the length L for parametric values of depth x;, when N, = 10'° cm”, Np = 10'* cm”, t,, = 20 nm and Vps = OV.
Fig.6 The dependence of the AV, on the length L for parametric values of depth x;, when N, = 10'° cm”, Np = 10'* cm”, t,, = 20 nm and Vps = OV.
The voltage term AV, as results of narrow-effects if shapes of the depletion region edges are modeled by quarter-circular arcs can be found as [2]:
The voltage term AV, as results of narrow-effects if shapes of the depletion region edges are modeled by quarter-circular arcs can be found as [2]:
Related topics:
MOSFET parametersBody effect
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