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Abstract
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Fabrication and Experimental Details
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Carbon nanotube thin film transistors based on aerosol methods

Profile image of Vladimir ErmolovVladimir Ermolov

2009, Nanotechnology

https://doi.org/10.1088/0957-4484/20/8/085201
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Abstract

We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO 2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 10 5 and field-effect mobilities up to 4 cm 2 V -1 s -1 . The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al 2 O 3 film was investigated. A 32 nm thick Al 2 O 3 layer was found to be able to eliminate the hysteresis.

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