Papers by Francesco Iannuzzo
Experimental evaluation of IGBT junction temperature measurement via peak gate current
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015
A comprehensive investigation on the short circuit performance of MW-level IGBT power modules
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015
FPGA implementation of the race-control algorithm for the full-bridge passive resonant commutated poles converter
ABSTRACT
Electro-thermal modeling of high power IGBT module short-circuits with experimental validation
2015 Annual Reliability and Maintainability Symposium (RAMS), 2015
Online junction temperature measurement via internal gate resistance during turn-on
2014 16th European Conference on Power Electronics and Applications, 2014
Microelectronics Reliability, 2008
A new concept for testing of power devices, in particular IGBTs, under unclamped inductive switch... more A new concept for testing of power devices, in particular IGBTs, under unclamped inductive switching (UIS) conditions has been adopted and presented in this paper. The testing apparatus is completely FPGA-based and is capable of setting each time of the test (especially the protection one) with a precision of 20 ns. Furthermore, the FPGA embeds a microprocessor, which is responsible for the complete control of the apparatus by a personal computer. Fourth-and fifth-generation, low-and medium-voltage IGBTs have been tested thanks to the presented apparatus, and the collected results have been presented, evidencing significant behavioural differences between the two technologies.
Microelectronics Reliability, 2005
The use of the MOSFET's embedded body diode in soft-switching applications often leads to the dev... more The use of the MOSFET's embedded body diode in soft-switching applications often leads to the device failure also at reduced power. A non-destructive diagnosis equipment is proposed and employed to systematically investigate the breakdown, as a support to theoretical investigations.
IEEE Transactions on Industrial Electronics, 2000
In this paper, the unedited race-control algorithm (RCA) for the full-bridge passive resonant com... more In this paper, the unedited race-control algorithm (RCA) for the full-bridge passive resonant commutated poles (FB-PRCP) converter is presented and implemented with a fieldprogrammable gate-array technique. It compensates the drawbacks of that topology that are related to the slow dynamics of the auxiliary poles which are necessary to obtain zero-voltage transitions both at turn-on and turn-off conditions and makes possible its use in more general welding applications, such as manual metal arc welding, in which very fast responses are required. The proposed RCA is a simple variation of the traditional phase-shift technique, which leads to significant efficiency improvements. The guiding idea is to apply the phase-shift technique to both legs of the converter, contrarily to what has been done to date. Leg B is delayed when phase shift must be increased, whereas leg A is delayed when a phase-shift reduction is needed, contrarily to the traditional phase-shift technique, where Leg B is delayed or anticipated and Leg A is held at a fixed phase. In this way, the limitation in dynamics of the converter is completely eliminated and it gains much more readiness. The effectiveness of the RCA has been experimentally tested on a true converter.
Microelectronics and Reliability, Sep 1, 2004
In railway applications possible interaction between power train and signalling system requires e... more In railway applications possible interaction between power train and signalling system requires efforts to Electro Magnetic Compatibility (EMC) problems. With the progress of power device technology in recent years, it has become feasible to improve performances of power electronics systems; however EMI noise, caused by fast switching commutations in power converters, has to be managed. EMC control has, therefore, become a worldwide topic, and requests for EMI noise reduction have become very strong.
Microelectronics and Reliability, Aug 1, 2008
The results presented in this paper are related to an experimental study that has the aim to evid... more The results presented in this paper are related to an experimental study that has the aim to evidence the formation of ''latent gate oxide damages" in medium voltage power MOSFETs during the impact with energetic particles. The understanding of these ''latent defectiveness" can be an helpful aid in the comprehension of the mechanisms of breach of the oxide layer of MOS structures induced by single energetic particles impact (single event gate rupture). To properly detect the presence of ''latent damages" we have developed a high resolution experimental set-up and identified an appropriate region in which the device have to be biased in order to trigger this kind of damage.
The very good performances of IGBT modules in terms of current robustness and thermal overstress ... more The very good performances of IGBT modules in terms of current robustness and thermal overstress can be used on power converters in order to obtain cost and weight reduction. Moreover, in order to develop higher performance devices, it is very important to discover and understand instable failure mechanisms that can occur during IGBT operations. The paper presents an experimental characterization
Non destructive SOA testing of power modules
Insulated gate bipolar transistors (IGBTs), having the big advantage of joining together the bipo... more Insulated gate bipolar transistors (IGBTs), having the big advantage of joining together the bipolar conduction characteristics and the insulated gate control, have received much attention in recent years for their energy efficient and rugged performance for a wide range of power applications. These devices are frequently employed in hard-switching applications, where the device is required to turn off high currents
Investigation on the short-circuit behavior of an aged IGBT module through a 6 kA/1.1 kV non-destructive testing equipment
IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society, 2014
ABSTRACT This paper describes the design and development of a 6 kA/1.1 kV non-destructive testing... more ABSTRACT This paper describes the design and development of a 6 kA/1.1 kV non-destructive testing system, which aims for short circuit testing of high-power IGBT modules. An ultra-low stray inductance of 37 nH is achieved in the implementation of the tester. An 100 MHz FPGA supervising unit enables 10 ns level control accuracy of the short-circuit duration, protection triggering, and acquisition of the electrical waveforms. Moreover, a protection circuit avoids explosions in case of failure, making the post-failure analysis possible. A case study has been carried out on an aged 1.7 kV IGBT power module. The case study shows the current and voltage waveforms during short-circuit, as well as the current mismatch among six inner sections, which demonstrate the capability and the effectiveness of the proposed setup in the short-circuit aspect reliability studies of MW-scale power modules.
2014 IEEE Energy Conversion Congress and Exposition (ECCE), 2014
Bond wires fatigue is one of the dominant failure mechanisms of IGBT modules. Prior-art research ... more Bond wires fatigue is one of the dominant failure mechanisms of IGBT modules. Prior-art research mainly focuses on its impact on the end-of-life failure, while its effect on the short-circuit capability of IGBT modules is still an open issue. This paper proposes a new electro-thermal simulation approach enabling analyze the impact of the bond wires fatigue on the current and temperature distribution on IGBT chip surface under short-circuit. It is based on an Icepack-PSpice co-simulation by taking the advantage of both a finite element thermal model and an advanced PSpice-based multicell IGBT model. A study case on a 1700 V/1000 A IGBT module demonstrates the effectiveness of the proposed simulation method. I.
Astroparticle, Particle, Space Physics and Detectors for Physics Applications, 2014
The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is present... more The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under γ, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field.
RADIATION EFFECTS ON POWER SEMICONDUCTOR DEVICES FOR DISTRIBUTED POWER SYSTEMS FOR ELECTROMAGNETIC CALORIMETERS
Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications, 2010
The present study faces the radiation tolerance aspect for two main device categories typically u... more The present study faces the radiation tolerance aspect for two main device categories typically used for power supplies of electromagnetic calorimeters for high-energy physics, like ATLAS Liquid-Ar calorimeters: 200V-MOSFETs and 30V-MOSFETs, which are fundamental for manipulating the primary voltage and the secondary voltage, respectively, of the power distribution system. Results demonstrate that the gate driving policy can significantly affect the radiation tolerance of such devices, suggesting a promising method to reach the 1Mrad target.
Thermal damage in SiC Schottky diodes induced by SE heavy ions
Microelectronics Reliability, 2014
ABSTRACT The failure of SiC Schottky diodes due to the impact of high energy heavy ions is invest... more ABSTRACT The failure of SiC Schottky diodes due to the impact of high energy heavy ions is investigated by means of electro-thermal and thermal finite element simulations. In particular, 3D ATLAS simulation of a small portion of the diode structure is used for computing the dissipated power density, which is subsequently used as input for the thermal COMSOL simulation of the complete system including chip and packaging. Results show that, as a consequence of the ion penetrating through the device, the temperature at the Schottky barrier becomes bigger than the SiC melting point for a time large enough to cause permanent damages to the SiC lattice. Simulation results are in good agreement with experiments presented in the literature.
Lumped charge PSPICE model for high-voltage IGBTs
Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2000
... Francesco Iannuzzo and Pasquale Grimaldi Dip. di Ingegneria Elettronica e delle Telecomunicaz... more ... Francesco Iannuzzo and Pasquale Grimaldi Dip. di Ingegneria Elettronica e delle Telecomunicazioni - Universith di Napoli Federico II Via Claudio, 21 - 80125 Napoli - ITALIA Abstract - A novel Dhvsics-based PSPICE IGBT U,.; Normalized electron concentration at node ...
2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551), 2004
An experimental characterization of new 3300V -1200A IGBT modules both at high temperature and fo... more An experimental characterization of new 3300V -1200A IGBT modules both at high temperature and for output currents beyond SOA, at turn-off and in short circuit conditions, is presented. Moreover a new driving strategy that improves, in comparison with conventional driving methods, IGBT turn-on on inductive load, in terms of power dissipation, is reported. Results demonstrate that, in principle, it is possible to operate at larger current than RBSOA limits and at temperature of 145°C. As regard turn-on operation, up to 37% dissipated energy reduction can be obtained with the innovative on-gate control. All the experimental study has been performed by means of a non-destructive experimental set-up, where IGBT modules are switched in presence of a protection circuit that is able to prevent device failure at the occurrence of any possible instable behaviour.
The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET
2009 European Conference on Radiation and Its Effects on Components and Systems, 2009
An experimental study aimed to identify the test conditions at which latent damages are created i... more An experimental study aimed to identify the test conditions at which latent damages are created is presented for different ion species with different energy losses both in the oxide and in the silicon. The experimental results, interpreted with the help of 3D finite element simulations, clarify the role played by the charge generated during the ion strike in starting the
Uploads
Papers by Francesco Iannuzzo