Figure 10 B. Changing Vds In next step, we changed Vds of the power amplifier from 8v up to 28v by 4v to show the possibility of increase in PAE by envelope tracking. Gain, power added efficiency and Output power of the RF power versus input power at center frequency of 2.1 GHz by changing Vds from 8v up to 28v by Av is shown in Fig. 10, Fig. 11 and Fig. 12 respectively. When the input power is 10 dBm and Vds is 8y, this simulation shows about 17% of more PAE than the condition of Vds=28v. Fig. 12 shows that we can increase P1dB of the We know that increasing the output power of the transistor leads to increase in PAE. It means that we have the best efficiency in the peak power. However, our input signal has a high peak to average ratio and the probability of the peak power is very low. Consequently, it is wise to design the matching for the case that happens most of the time, which is mean power. Therefore, because Vds changes with respect to the input power, we optimize the power amplifier for the Vds related to the mean power. wan lk a a tm, « 7 eva’ a