Academia.eduAcademia.edu

Again, densification of boron carbide can be achieved in a cost-efficient and fast manner by using reaction bonding [9]. A porous preform consisting o boron carbide, sometimes with additional free carbon, is infiltrated with molten silicon, as is the case for reaction bonded silicon carbide. The end result is a composite material, Reaction Bonded Boron Carbide (RBBC), consisting of B4C and a ternary By2(B,C,Si)3, reaction formed 6-SiC and residual Si. A typical microstructure of RBBC is presented in figure 1.3 [10]. The reaction ormed SiC in this case can originate from two different reactions [11], the first one only taking place when there is free carbon available in the preform:

Figure 1 Again, densification of boron carbide can be achieved in a cost-efficient and fast manner by using reaction bonding [9]. A porous preform consisting o boron carbide, sometimes with additional free carbon, is infiltrated with molten silicon, as is the case for reaction bonded silicon carbide. The end result is a composite material, Reaction Bonded Boron Carbide (RBBC), consisting of B4C and a ternary By2(B,C,Si)3, reaction formed 6-SiC and residual Si. A typical microstructure of RBBC is presented in figure 1.3 [10]. The reaction ormed SiC in this case can originate from two different reactions [11], the first one only taking place when there is free carbon available in the preform: