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Fig. 3. Variation of peak-to-peak linewidth, spin-lattice (T,, ™) anc spin-spin (T,, ©) relaxation times with implantation dose.

Figure 3 Variation of peak-to-peak linewidth, spin-lattice (T,, ™) anc spin-spin (T,, ©) relaxation times with implantation dose.

Related Figures (2)

Fig. 1. Variation in EPR signal with implantation dose and implant- ing species. In (b) and (c) the two line fit is shown by a smooth solid line, the carbon defect component by a dashed line and the silicon defect component by a dotted line.
Fig. 1. Variation in EPR signal with implantation dose and implant- ing species. In (b) and (c) the two line fit is shown by a smooth solid line, the carbon defect component by a dashed line and the silicon defect component by a dotted line.
Fig. 2. Variation of volume concentration of the carbon defect with implantation dose.
Fig. 2. Variation of volume concentration of the carbon defect with implantation dose.
Related topics:
Materials EngineeringMechanical EngineeringChemical EngineeringPhysicsCondensed Matter PhysicsMaterials ScienceThin Films and CoatingsElectron Spin ResonanceThin film growthAmorphous Materials
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