Figure 1 – uploaded by Sebastian Stach

Fig. 1. Diffraction pattern of 3C-SiC/Si(1 | 1) structure: for film thickness (a) 140 nm and (b) 420 nm. Silicon carbide polycrystalline target was sput- tered on properly prepared commercially avail- able silicon substrates (with orientation of sur- face deflected from (1 1 1) plane). Temperature of the films preparation was 950 °C to 1100 °C. The chamber was evacuated to a vacuum of 1.33 x 10~4 Pa before starting the flow of inert gas (Ar) for sputtering the target material. The samples were taken from the chamber after cooling to room temperature. The technology details were reported in [19, 20]. Since silicon carbide does not oxidize in air, the exposition of the samples to the air did not influence its characteristics. The thicknesses of the films were measured by observing the samples crossections using scanning electron microscope. X-ray diffraction data proved the presence of 3C-SiC cubic modification (Fig. 1). — Figure 1 Diffraction pattern of 3C-SiC/Si(1 | 1) structure: for film thickness (a) 140 nm and (b) 420 nm. Silicon carbide polycrystalline target was sput- tered on properly prepared commercially avail- able silicon substrates (with orientation of sur- face deflected from (1 1 1) plane). Temperature of the films preparation was 950 °C to 1100 °C. The chamber was evacuated to a vacuum of 1.33 x 10~4 Pa before starting the flow of inert gas (Ar) for sputtering the target material. The samples were taken from the chamber after cooling to room temperature. The technology details were reported in [19, 20]. Since silicon carbide does not oxidize in air, the exposition of the samples to the air did not influence its characteristics. The thicknesses of the films were measured by observing the samples crossections using scanning electron microscope. X-ray diffraction data proved the presence of 3C-SiC cubic modification (Fig. 1).

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$Fig. 3. Profile of AFM measurements: (a) film thick- ness 140 nm and (b) film thickness 420 nm. a single fractal measure does not describe the to- pography elements of films and coatings. Two common multifractal measures are used in computational analyses: the generalized dimension Dq of the qth order moment of a distribution and the f(x) singularity spectrum. The generalized di- mension Dq could be determined for any real pa- rameter q in the range from —co (concentrates on less dense regions) to +o (concentrates on dense regions) that shows the order of the measure mo- ment. x(q) is called Holder exponent of the qth or- der moment or singularity exponent.$

Fig. 3. Profile of AFM measurements: (a) film thick- ness 140 nm and (b) film thickness 420 nm. a single fractal measure does not describe the to- pography elements of films and coatings. Two common multifractal measures are used in computational analyses: the generalized dimension Dq of the qth order moment of a distribution and the f(x) singularity spectrum. The generalized di- mension Dq could be determined for any real pa- rameter q in the range from —co (concentrates on less dense regions) to +o (concentrates on dense regions) that shows the order of the measure mo- ment. x(q) is called Holder exponent of the qth or- der moment or singularity exponent.

Figure 1 – uploaded by Sebastian Stach

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