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Electrical control of all-optical graphene switches

Profile image of Mohammed AlaloulMohammed Alaloul

2022, Electrical control of all-optical graphene switches

https://doi.org/10.1364/OE.441710
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Abstract

Graphene has emerged as an ultrafast photonic material for on-chip all-optical switching applications. However, its atomic thickness limits its interaction with guided optical modes, resulting in a high switching energy per bit. Herein, we propose a novel technique to electrically control the switching energy of an all-optical graphene switch on a silicon nitride waveguide. Using this technique, we theoretically demonstrate a 120 µm long all-optical graphene switch with an 8.9 dB extinction ratio, 2.4 dB insertion loss, a switching time of <100 fs, a fall time of <5 ps, and a 235 fJ switching energy at 2.5 V bias, where the applied voltage reduces the switching energy by ∼16×. This technique paves the way for the emergence of ultra-efficient all-optical graphene switches that will meet the energy demands of next-generation photonic computing systems, and it is a promising alternative to lossy plasmon-enhanced devices.

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In this paper, an all-optical photonic crystal-based switch containing a graphene resonant ring has been presented. The structure has been composed of 15 × 15 silicon rods for a fundamental lattice. Then, a resonant ring including 9 thick silicon rods and 24 graphene-SiO2 rods was placed between two waveguides. The thick rods with a radius of 0.41a in the form of a 3 × 3 lattice were placed at the center of the ring. Graphene-SiO2 rods with a radius of 0.2a were assumed around the thick rods. These rods were made of the graphene monolayers which were separated by SiO2 disks. The size of the structure was about 70 µm2 that was more compact than other works. Furthermore, the rise and fall times were obtained by 0.3 ps and 0.4 ps, respectively, which were less than other reports. Besides, the amount of the contrast ratio (the difference between the margin values for logics 1 and 0) for the proposed structure was calculated by about 82%. The correct switching operation, compactness, and...

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All-optical control on a graphene- on-silicon waveguide modulator
Kelvin J A Ooi

Scientific Reports, 2017

The hallmark of silicon photonics is in its low loss at the telecommunications wavelength, economic advantages and compatibility with CMOS design and fabrication processes. These advantages are however impeded by its relatively low Kerr coefficient that constrains the power and size scaling of nonlinear all-optical silicon photonic devices. Graphene, with its unprecedented high Kerr coefficient and uniquely thin-film structure, makes a good nonlinear material to be easily integrated onto all-optical silicon photonic waveguide devices. We study the design of all-optical graphene-on-silicon (GOS) waveguide modulators, and find the optimized performance of MW cm −2 in optical pump intensities and sub-mm device lengths. The improvements brought by the integration of graphene onto silicon photonic waveguides could bring us a step closer to realising compact all-optical control on a single chip. The thriving success of the electronics microprocessor over the past four decades is achieved with the abundant availability of silicon. However, in recent years, the increasing demand for faster processing speed and larger bandwidth have not been met, saturating at around 3 to 4 GHz 1. This is due to limits of metallic interconnects facing signal attenuation and large power consumption at higher data rates 2. One of the solutions is to replace them with optical interconnects. The replacement candidate, silicon photonics, is viable given its potential low cost and high compatibility with CMOS design and manufacturing process 3. Silicon photonics also interface well with electronic transistors through power-efficient optoelectronic transceivers. Recently, Sun et al. has successfully demonstrated a working prototype of a chip-scale electronic-photonic system based on the silicon photonics platform 4. Current research is also pushing for elimination of electronic transistors for seamless integration of an all-optical computing platform 5. In all-optical computing for silicon photonics, the nonlinear effects are used to achieve modulation. Nonlinear effects in silicon photonics have been demonstrated to process optical signals at speeds of beyond 100 Gbit/s 6. Besides processing optical signals, nonlinear effects are also used for sensing and generation of photons for lasing and amplification. However, the inherent nonlinear Kerr effects of silicon is of the low range of 6 × 10 −18 m 2 W −1. To achieve a reasonable level of contrast needed for optical modulation, nonlinear optical devices often need to be operated at high optical intensities and long optical device lengths. This results in high power consumption and large device footprints, which runs in contrary to the original aim to scale down device size and energy consumption in computing chips 7. The best way to mitigate the disadvantages of silicon nonlinear photonics is to integrate them with novel high Kerr-coefficient materials while keeping the silicon platform for its economic advantages. One of the best candidate material is graphene, which has a high Kerr-coefficient from 10 −7 to 10 −13 m 2 W −1 8–15. Being a two-dimensional atomically thin-film material, graphene alone is not suitable to be used as photonic waveguide due to its poor optical confinement. There are efforts to design around the thin-film nature of graphene by implementing the nonlinear optical devices on graphene plasmonic waveguides 16–21 ; however, due to their short propagation length of only a few micrometers 22,23 , they are not compatible with the longer-ranged photonics, only suitable to be used in an all-plasmonics platform. Prior papers discussed graphene-based modulators placed on dielectrics only in the context of its real refrac-tive index changes 24 , with a conclusion that graphene's nonlinear performance is ordinary due to its high losses. However, in this paper, we show that if we take into account the nonlinear reduction in losses, or even designing extinction modulators, the performance of graphene may exceed that of silicon-on-insulator (SOI) waveguides. Hence, by integrating graphene onto silicon waveguides, we simultaneously make use of the photonic confinement and long-range waveguiding properties of silicon-based waveguides while leveraging the high optical nonlinearities of graphene for optical switching. In this paper, we will study in detail how to integrate graphene

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Ultrafast All-Optical Switching Incorporating in Situ Graphene Grown along an Optical Fiber by the Evanescent Field of a Laser
PULAK CHANDRA DEBNATH

Graphene, with its high optical nonlinearity and unique dispersionless nonlinear optical response over a broad wavelength range, has been studied extensively to implement optical devices such as fiber lasers, broadband modulators, polarizers, and optical switches. Conventionally synthesized graphene relying on high temperature and vacuum equipment suffers from deleterious transfer steps that degrade the graphene quality, thereby affecting the efficiency of nonlinear optical operation and lacking the customized patterning with minimized footprint as well as missing the facilitated fabrication process. Here, a laser-aided in situ synthesis of multilayered graphene directly onto the flat surface of a side-polished optical fiber in ambient condition is demonstrated for absolute investigation of an as-grown graphene crystal in the optical domain. The evanescent field of an amplified continuous wave laser, propagating through an optical fiber, provides activation energy for carbon atoms t...

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High Extinction Ratio Hybrid Graphene-Silicon Photonic Crystal Switch
Peter De Heyn

IEEE Photonics Technology Letters

In this letter, we demonstrate a compact optical switch realized by integrating a graphene layer with a silicon photonic crystal cavity fabricated using deep UV immersion lithography and a novel transfer printing approach. A 17-dB extinction ratio and 0.75-nm shift in the cavity resonance are measured for a swing voltage of only 1.2 V. The graphene layer is limited to 1 × 5 µm in size. The experimental results are linked to a theoretical model and used to predict possible improvements to the design.

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Related topics

  • Silicon Photonics
  • 2d Materials
  • Optical Modulators
  • All Optical Devices
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