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Wafer-Scale Integration of Graphene-Based Photonic Devices

Profile image of Camilla ColettiCamilla Coletti

ACS Nano

https://doi.org/10.1021/ACSNANO.0C09758
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Abstract

Graphene and related materials can lead to disruptive advances in next-generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (≥5000 cm 2 V −1 s −1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapor deposition (CVD) of single layer graphene (SLG) matrices comprising up to ∼12000 individual single crystals, grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ∼80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ∼5000 cm 2 V −1 s −1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ∼0.25, 0.45, 0.75, 1 dB V −1 for device lengths ∼30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hexagonal boron nitride (hBN) is used to protect SLG during plasma-enhanced CVD of Si 3 N 4 , ensuring reproducible device performance. The processes are compatible with full automation. This paves the way for large scale production of graphenebased photonic devices.

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    Camilla Coletti

    ACS Nano, 2021

    We demonstrate a graphene−MoS 2 architecture integrating multiple field-effect transistors (FETs), and we independently probe and correlate the conducting properties of van der Waals coupled graphene−MoS 2 contacts with those of the MoS 2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition. The heterojunction was investigated by scanning Raman and photoluminescence spectroscopies. Moreover, transconductance curves of MoS 2 are compared with the current−voltage characteristics of graphene contact stripes, revealing a significant suppression of transport on the n-side of the transconductance curve. On the basis of ab initio modeling, the effect is understood in terms of trapping by sulfur vacancies, which counterintuitively depends on the field effect, even though the graphene contact layer is positioned between the backgate and the MoS 2 channel.

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