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Abstract
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Physics
Quantum Mechanics

Cavity-enhanced single photons from a quantum dot

Profile image of Yoshihisa YamamotoYoshihisa YamamotoProfile image of David FattalDavid Fattal

2010

Abstract

Single-photon sources rarely emit two or more photons in the same pulse, compared to a Poisson-distributed source of the same intensity, and have numerous applications in quantum information science. The quality of such a source is evaluated based on three criteria: high efficiency, small multi-photon probability, and quantum indistinguishability. We have demonstrated a single-photon source based on a quantum dot in a micropost microcavity that exhibits a large Purcell factor together with a small multi-photon probability. For a quantum dot on resonance with the cavity, the spontaneous emission rate has been increased by a factor of five, while the probability to emit two or more photons in the same pulse has been reduced to 2% compared to a Poisson-distributed source of the same intensity. The indistinguishability of emitted single photons from one of our devices has been tested through a Hong-Ou-Mandel-type two-photon interference experiment; consecutive photons emitted from such a source have been largely indistinguishable, with a mean wave-packet overlap as large as 0.81. We have also designed and demonstrated two-dimensional photonic crystal GaAs cavities containing InAs quantum dots that exhibit much higher quality factors together with much smaller mode volumes than microposts, and therefore present an ideal platform for construction of single photon sources of even higher quality.

FAQs

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What improvements do microcavities provide for single-photon sources?add

Microcavities enhance spontaneous emission rates by up to fivefold, thereby significantly increasing outcoupling efficiencies. This is accompanied by a two-photon probability of just 2%, markedly lower than Poisson-distributed sources.

How does thermal tuning affect quantum dot emission?add

Thermal tuning adjusts the quantum dot emission wavelength, impacting the radiative lifetime. Experiments show that shift causes significant variations in radiative lifetime linked to detuning from cavity resonance.

What is the significance of the Purcell factor in this study?add

The Purcell factor is crucial as it boosts spontaneous emission rates and improves photon generation rates. In the presented micropost microcavity, a Purcell factor of 5 was achieved, enhancing efficiency.

How were multi-photon probabilities measured in the quantum dot experiments?add

Multi-photon probabilities were characterized using the second-order coherence function, with g(0) estimated at 2%. This evaluation utilized a Hanbury Brown and Twiss setup for photon correlation measurements.

What role do Q-factors play in the performance of photonic crystal cavities?add

High Q-factors, theoretically exceeding 40,000, enable lower mode volumes and better cavity-QD coupling. Experimentally, observed Q-factors between 2500 and 4300 facilitate the strong coupling regime, essential for effective single-photon sources.

Figures (10)
epitaxy (MBE), under conditions that give relatively sparse dots, with a surface density of 11 - 75 um~?. Fig. 1 shows an atomic-force microscope image of dots similar to those used in our experiments, except for the absence of a GaAs capping layer. Figure 1. Atomic Force Microscope images of quantum dot arrays grown by Molecular Beam Epitaxy. The size and density of dots can be controlled by controlling the growth rate, the substrate temperature, the ratio of As to In impinging on the surface, and the amount of material deposited.
epitaxy (MBE), under conditions that give relatively sparse dots, with a surface density of 11 - 75 um~?. Fig. 1 shows an atomic-force microscope image of dots similar to those used in our experiments, except for the absence of a GaAs capping layer. Figure 1. Atomic Force Microscope images of quantum dot arrays grown by Molecular Beam Epitaxy. The size and density of dots can be controlled by controlling the growth rate, the substrate temperature, the ratio of As to In impinging on the surface, and the amount of material deposited.
Figure 3. Experimental setup used to measure luminescence from single quantum dots.
Figure 3. Experimental setup used to measure luminescence from single quantum dots.
Figure 4. Photoluminescence from a single InAs/GaAs quantum dot under above-band excitation (top) and resonant excitation (bottom). With resonant excitation, the favored absorption of a single electron-hole pair and formation of one-exciton state is expected.
Figure 4. Photoluminescence from a single InAs/GaAs quantum dot under above-band excitation (top) and resonant excitation (bottom). With resonant excitation, the favored absorption of a single electron-hole pair and formation of one-exciton state is expected.
We performed lifetime and g®) measurements on a QD chosen for its bright emission under resonant ex- citation. Tuning of the sample temperature was used to tune the emission wavelength relative to the cavity resonance.”? In the studied temperature range, the shift of the cavity resonance with temperature (due to refractive index change) is much slower than the shift in the excitonic emission wavelength, which is attributed to the changes in the band gaps of InAs and GaAs with temperature.2® This can be seen in Fig. 5, where streak camera images taken at 10K and 30K for the same resonantly excited dot are shown. Clearly, the emis- sion wavelength increases with temperature; as a result of this shift, the radiative lifetime also changes. This particular dot (presented in Figs. 5 and 6) is almost exactly on resonance with the cavity at low temperature, so by heating the sample and increasing the QD emission wavelength, one also increases the detuning from the cavity resonance and the radiative lifetime. The opposite process is observed if the QD emission wavelength is initially smaller than the cavity resonance. Figure 5. Streak camera images of a quantum dot emission taken at the temperatures of 10K (left) and 30K (right).
We performed lifetime and g®) measurements on a QD chosen for its bright emission under resonant ex- citation. Tuning of the sample temperature was used to tune the emission wavelength relative to the cavity resonance.”? In the studied temperature range, the shift of the cavity resonance with temperature (due to refractive index change) is much slower than the shift in the excitonic emission wavelength, which is attributed to the changes in the band gaps of InAs and GaAs with temperature.2® This can be seen in Fig. 5, where streak camera images taken at 10K and 30K for the same resonantly excited dot are shown. Clearly, the emis- sion wavelength increases with temperature; as a result of this shift, the radiative lifetime also changes. This particular dot (presented in Figs. 5 and 6) is almost exactly on resonance with the cavity at low temperature, so by heating the sample and increasing the QD emission wavelength, one also increases the detuning from the cavity resonance and the radiative lifetime. The opposite process is observed if the QD emission wavelength is initially smaller than the cavity resonance. Figure 5. Streak camera images of a quantum dot emission taken at the temperatures of 10K (left) and 30K (right).
shift is included in plotting the data. Up to fivefold spontaneous emission rate enhancement (Purcell factor F’ is observed for the dot coupled to a cavity, as opposed to the dot off of resonance (top-right plot of Figure 6). Figure 6. Top-left: Background emission filtered by the cavity. Top-right: Decay rate of the emission line as a function of the absolute value of its detuning from the cavity resonance (|Agp — Ac|). The dot emission wavelength was tuned by changing the sample temperature within the 6 K - 40 K range. Bottom: time-dependent photoluminescence from the emission line on-resonance with the cavity, as opposed to this same emission line off-resonance.
shift is included in plotting the data. Up to fivefold spontaneous emission rate enhancement (Purcell factor F’ is observed for the dot coupled to a cavity, as opposed to the dot off of resonance (top-right plot of Figure 6). Figure 6. Top-left: Background emission filtered by the cavity. Top-right: Decay rate of the emission line as a function of the absolute value of its detuning from the cavity resonance (|Agp — Ac|). The dot emission wavelength was tuned by changing the sample temperature within the 6 K - 40 K range. Bottom: time-dependent photoluminescence from the emission line on-resonance with the cavity, as opposed to this same emission line off-resonance.
Figure 7. Photon correlation histogram for a QD on resonance with the cavity (the lifetime of this dot is shown in Fig. 6), under pulsed, resonant excitation. The inset depicts the magnified central portion (from r=-6.5 ns to 6.5 ns) of the histogram. The missing central peak (at r=0) indicates a large suppression of multi-photon pulses.
Figure 7. Photon correlation histogram for a QD on resonance with the cavity (the lifetime of this dot is shown in Fig. 6), under pulsed, resonant excitation. The inset depicts the magnified central portion (from r=-6.5 ns to 6.5 ns) of the histogram. The missing central peak (at r=0) indicates a large suppression of multi-photon pulses.
Figure 8. Photonic crystal cavity fabricated in GaAs containing InAs QDs, for operation around 950nm. Such cavities exhibit mode volumes of around 0.5(A\/n)? for the dipole mode whose electric field pattern is shown in the figure on the right, and we have measured Q-factors of up to 4300.
Figure 8. Photonic crystal cavity fabricated in GaAs containing InAs QDs, for operation around 950nm. Such cavities exhibit mode volumes of around 0.5(A\/n)? for the dipole mode whose electric field pattern is shown in the figure on the right, and we have measured Q-factors of up to 4300.
Figure 9. Spectrum of the cavity such as the one shown in Fig. 8. Polarization sensitivity of the spectrum implies tha‘ the main peak corresponds to the dipole mode, which is primarily linearly polarized. are sufficient to enable the onset of the strong coupling regime for a single self-assembled InAs/GaAs QD embedded inside such a cavity (g is of the order of & and much larger than y), which can be employed in construction of high-visibility single photon sources.?3
Figure 9. Spectrum of the cavity such as the one shown in Fig. 8. Polarization sensitivity of the spectrum implies tha‘ the main peak corresponds to the dipole mode, which is primarily linearly polarized. are sufficient to enable the onset of the strong coupling regime for a single self-assembled InAs/GaAs QD embedded inside such a cavity (g is of the order of & and much larger than y), which can be employed in construction of high-visibility single photon sources.?3
study of the cavity QED with a single emitter in such a system and single-photon generation on demand will | reported in our forthcoming publication. Figure 10. Power series for the photoluminescence from a photonic crystal cavity containing QDs, showing a transitio1 between the quantum dot spectrum at low excitation powers and the cavity spectrum at high excitation powers.
study of the cavity QED with a single emitter in such a system and single-photon generation on demand will | reported in our forthcoming publication. Figure 10. Power series for the photoluminescence from a photonic crystal cavity containing QDs, showing a transitio1 between the quantum dot spectrum at low excitation powers and the cavity spectrum at high excitation powers.

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