Stavreva et al., 1997 - Google Patents
Characteristics in chemical-mechanical polishing of copper: comparison of polishing padsStavreva et al., 1997
- Document ID
- 9802578597723286678
- Author
- Stavreva Z
- Zeidler D
- Plötner M
- Drescher K
- Publication year
- Publication venue
- Applied Surface Science
External Links
Snippet
A systematic study of Cu CMP in terms of the effect of polishing pad properties on the process characteristics has been performed. The IC 1000 and IC 1000/SUBA IV polishing pads were compared with regard to the polish rates, across-wafer uniformity, planarity and …
- 238000005498 polishing 0 title abstract description 49
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Stavreva et al. | Characteristics in chemical-mechanical polishing of copper: comparison of polishing pads | |
Steigerwald et al. | Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures | |
US5957757A (en) | Conditioning CMP polishing pad using a high pressure fluid | |
JP4095731B2 (en) | Semiconductor device manufacturing method and semiconductor device | |
US6960521B2 (en) | Method and apparatus for polishing metal and dielectric substrates | |
US6376381B1 (en) | Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies | |
US7527722B2 (en) | Electrochemical mechanical planarization | |
Stavreva et al. | Chemical mechanical polishing of copper for multilevel metallization | |
EP0366027B1 (en) | Wafer flood polishing | |
EP1295322B1 (en) | Two steps chemical mechanical polishing process | |
US6605537B2 (en) | Polishing of metal substrates | |
EP1147546A1 (en) | Method to decrease dishing rate during cmp in metal semiconductor structures | |
US20010051433A1 (en) | Use of csoh in a dielectric cmp slurry | |
KR20040029947A (en) | Method of chemical mechanical polishing | |
Stavreva et al. | Chemical-mechanical polishing of copper for interconnect formation | |
Luo et al. | Dishing effects during chemical mechanical polishing of copper in acidic media | |
US7696095B2 (en) | Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide | |
Stavreva et al. | Influence of process parameters on chemical-mechanical polishing of copper | |
EP1349703B1 (en) | Belt polishing device with double retainer ring | |
US6667239B2 (en) | Chemical mechanical polishing of copper-oxide damascene structures | |
Van Kranenburg et al. | Influence of overpolish time on the performance of W damascene technology | |
US7690966B1 (en) | Method and apparatus for detecting planarization of metal films prior to clearing | |
US20040235398A1 (en) | Chemical mechanical planarization method and apparatus for improved process uniformity, reduced topography and reduced defects | |
US20060258158A1 (en) | Polish method for semiconductor device planarization | |
Jindal et al. | Effect of pH on chemical-mechanical polishing of copper and tantalum |