JPH1174649A - Wiring board and method of manufacturing the same - Google Patents
Wiring board and method of manufacturing the sameInfo
- Publication number
- JPH1174649A JPH1174649A JP9233154A JP23315497A JPH1174649A JP H1174649 A JPH1174649 A JP H1174649A JP 9233154 A JP9233154 A JP 9233154A JP 23315497 A JP23315497 A JP 23315497A JP H1174649 A JPH1174649 A JP H1174649A
- Authority
- JP
- Japan
- Prior art keywords
- wiring conductor
- epoxy resin
- insulating
- metal foil
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
(57)【要約】
【課題】 金属箔から成る表面配線導体が絶縁基体から
剥離し、また両者間から水分が浸入して、電気的接続が
不確実となり搭載する半導体素子を長期間にわたり正常
かつ安定に作動させることができない。
【解決手段】 無機絶縁物粉末をビスマレイミドトリア
ジン樹脂で結合して成り、内部に金属粉末を熱硬化性樹
脂で結合して成る内部配線導体2が埋設された絶縁基板
1の表面に内部配線導体2に電気的に接続された金属箔
から成る表面配線導体3a・3bをエポキシ樹脂接着層
6a・6bを介して固着した配線基板である。絶縁基体
1と表面配線導体3a・3bとの接合が強固なものとな
るとともに、両者間からの水分の浸入が有効に防止さ
れ、表面配線導体3a・3bと内部配線導体2との電気
的接続が不確実となることがなくなる。
(57) Abstract: A surface wiring conductor made of a metal foil is peeled off from an insulating base, and moisture penetrates between the two to make electrical connection uncertain, so that a semiconductor element to be mounted can be normally used for a long time. Cannot operate stably. SOLUTION: An internal wiring conductor is formed on a surface of an insulating substrate 1 in which an inorganic insulating powder is bonded with a bismaleimide triazine resin and an internal wiring conductor 2 formed by bonding a metal powder with a thermosetting resin is embedded therein. 2 is a wiring board in which surface wiring conductors 3a and 3b made of metal foil electrically connected to 2 are fixed via epoxy resin adhesive layers 6a and 6b. The bonding between the insulating base 1 and the surface wiring conductors 3a and 3b is strengthened, and the infiltration of moisture from between them is effectively prevented, and the electrical connection between the surface wiring conductors 3a and 3b and the internal wiring conductor 2 is made. Will not be uncertain.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体素子を収容
するための半導体素子収納用パッケージや混成集積回路
基板等に用いられる配線基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for a package for housing a semiconductor element for housing a semiconductor element or a hybrid integrated circuit board.
【0002】[0002]
【従来技術】従来、配線基板、例えば半導体素子を収容
する半導体素子収納用パッケージに使用される配線基板
は、酸化アルミニウム質焼結体等のセラミックスより成
り、その上面に半導体素子を搭載する搭載部を有する絶
縁基体と、絶縁基体の上面で搭載部または搭載部近傍か
ら絶縁基体下面にかけて導出されたタングステン・モリ
ブデン等の高融点金属メタライズから成る配線導体とか
ら構成されており、絶縁基体の搭載部に半導体素子を載
置するとともに半導体素子の各電極を絶縁基体の上面に
導出した配線導体に半田バンプやボンディングワイヤ等
の電気的接続手段を介して電気的に接続し、しかる後、
絶縁基体の上面に金属やセラミックス等から成る蓋体を
半導体素子を覆うようにしてガラス・樹脂・ロウ材等の
封止材を介して接合させ、半導体素子を気密に収容する
ことによって製品としての半導体装置となる。そして、
配線導体の絶縁基体下面に導出した部位を外部電気回路
基板の配線導体に接続することによって半導体素子の各
電極が外部電気回路基板に電気的に接続されることとな
る。2. Description of the Related Art Conventionally, a wiring board, for example, a wiring board used for a semiconductor element housing package for housing a semiconductor element is made of ceramics such as an aluminum oxide sintered body, and a mounting portion for mounting the semiconductor element on an upper surface thereof. And a wiring conductor made of a refractory metal metallization such as tungsten or molybdenum led out from the mounting portion or the vicinity of the mounting portion to the lower surface of the insulating substrate on the upper surface of the insulating substrate. The semiconductor element is mounted on the substrate and each electrode of the semiconductor element is electrically connected to a wiring conductor led out on the upper surface of the insulating base via an electrical connection means such as a solder bump or a bonding wire.
A lid made of metal, ceramics, etc. is bonded to the upper surface of the insulating base via a sealing material such as glass, resin, brazing material, etc. so as to cover the semiconductor element, and the semiconductor element is housed in a gas-tight manner as a product. It becomes a semiconductor device. And
Each electrode of the semiconductor element is electrically connected to the external electric circuit board by connecting a portion of the wiring conductor extending to the lower surface of the insulating base to the wiring conductor of the external electric circuit board.
【0003】この従来の配線基板は、セラミックグリー
ンシート積層法によって製作され、具体的には、酸化ア
ルミニウム・酸化珪素・酸化マグネシウム・酸化カルシ
ウム等のセラミック原料粉末に適当な有機バインダや溶
剤等を添加混合して泥漿状となすとともにこれを従来周
知のドクターブレード法を採用してシート状とすること
によって複数のセラミックグリーンシートを得、しかる
後、これらのセラミックグリーンシートに適当な打ち抜
き加工を施すとともに配線導体となる金属ペーストを所
定パターンに印刷塗布し、最後にこれらのセラミックグ
リーンシートを所定の順に上下に積層して生セラミック
成形体となすとともにこれを還元雰囲気中約1600℃の高
温で焼成することによって製作される。[0003] This conventional wiring board is manufactured by a ceramic green sheet laminating method. Specifically, an appropriate organic binder or solvent is added to a ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide or calcium oxide. A plurality of ceramic green sheets are obtained by mixing and forming a slurry into a sheet shape by employing a well-known doctor blade method, and thereafter, these ceramic green sheets are subjected to an appropriate punching process. A metal paste to be a wiring conductor is printed and applied in a predetermined pattern, and finally, these ceramic green sheets are stacked up and down in a predetermined order to form a green ceramic molded body and fired at a high temperature of about 1600 ° C. in a reducing atmosphere. Produced by
【0004】しかしながら、この従来の配線基板は、絶
縁基体を構成する酸化アルミニウム質焼結体等のセラミ
ックスが硬くて脆い性質を有するため、搬送工程や半導
体装置製作の自動ライン等において配線基板同士が、あ
るいは配線基板と半導体装置製作自動ラインの一部とが
激しく衝突すると絶縁基体に欠けや割れ・クラック等が
発生し、その結果、半導体素子を気密に収容することが
できず、半導体素子を長期間にわたり正常かつ安定に作
動させることができなくなるという欠点を有していた。However, in the conventional wiring board, since ceramics such as an aluminum oxide sintered body constituting the insulating base have a hard and brittle property, the wiring boards are not connected to each other in a transfer process or an automatic line for manufacturing semiconductor devices. If the wiring board and a part of the automatic semiconductor device manufacturing line collide violently, the insulating substrate may be chipped, cracked, cracked, etc., and as a result, the semiconductor element cannot be housed in a gas-tight manner, and the length of the semiconductor element cannot be increased. There was a disadvantage that normal and stable operation could not be achieved over a period of time.
【0005】また、この従来の配線基板の製造方法によ
れば、生セラミック成形体を焼成する際、生セラミック
成形体に不均一な焼成収縮が発生し、得られる配線基板
に反り等の変形や寸法のばらつきが発生し、その結果、
半導体素子と配線導体とを電気的に正確かつ確実に接続
することが困難であるという欠点を有していた。Further, according to this conventional method for manufacturing a wiring board, when the green ceramic molded body is fired, uneven firing shrinkage occurs in the green ceramic molded body, and the resulting wiring board has deformation such as warpage. Dimensional variations occur, and as a result,
There is a disadvantage that it is difficult to electrically and accurately connect the semiconductor element and the wiring conductor with each other.
【0006】そこで、配線基板の絶縁基体を従来のセラ
ミックスに代えて無機絶縁物粉末を熱硬化性樹脂により
結合した材料からなる絶縁基板を積層することで形成
し、また配線導体を従来のタングステンやモリブデン等
の高融点金属メタライズに代えて銅等の金属粉末を熱硬
化性樹脂により結合して成る材料で形成した配線基板が
提案されている。Therefore, the insulating substrate of the wiring substrate is formed by laminating an insulating substrate made of a material obtained by bonding inorganic insulating powder with a thermosetting resin in place of conventional ceramics, and the wiring conductor is made of conventional tungsten or tungsten. There has been proposed a wiring board formed of a material obtained by bonding a metal powder such as copper with a thermosetting resin in place of a metal having a high melting point such as molybdenum.
【0007】この無機絶縁物粉末を熱硬化性樹脂で結合
して成る絶縁基板を積層した絶縁基体と金属粉末を熱硬
化性樹脂で結合して成る配線導体とから成る配線基板
は、熱硬化性樹脂前駆体と無機絶縁物粉末とを混合して
成る半硬化状態の前駆体シートを複数準備するとともに
これに適当な打ち抜き加工を施し、次にこれらの前駆体
シートに熱硬化性樹脂前駆体と金属粉末とを混合して成
る金属ペーストを所定パターンに印刷塗布し、最後に金
属ペーストが印刷塗布された前駆体シートを積層すると
ともに約150 〜300 ℃の温度および約4〜100 kgf/
cm2 の圧力でホットプレスし、これを熱硬化させるこ
とによって製作される。A wiring board composed of an insulating base obtained by laminating an insulating substrate formed by bonding the inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder with a thermosetting resin is a thermosetting resin. A plurality of semi-cured precursor sheets prepared by mixing a resin precursor and an inorganic insulating powder are prepared and subjected to an appropriate punching process, and then these precursor sheets are mixed with a thermosetting resin precursor. A metal paste mixed with a metal powder is printed and applied in a predetermined pattern. Finally, a precursor sheet on which the metal paste is printed and applied is laminated, and a temperature of about 150 to 300 ° C. and about 4 to 100 kgf /
It is manufactured by hot pressing at a pressure of cm 2 and heat curing.
【0008】この配線基板によれば、絶縁基板となる無
機絶縁物粉末および配線導体となる金属粉末を靭性に優
れる熱硬化樹脂により結合して成ることから、配線基板
同士あるいは配線基板と半導体装置製作自動ラインの一
部とが激しく衝突しても絶縁基体に欠けや割れ・クラッ
ク等が発生することは一切ない。According to this wiring board, the inorganic insulating powder serving as the insulating substrate and the metal powder serving as the wiring conductor are bonded by a thermosetting resin having excellent toughness. Even if a part of the automatic line collides violently, the insulating substrate will never be chipped, cracked or cracked.
【0009】またこの配線基板の製造方法によれば、絶
縁基体および配線導体に含有される熱硬化性樹脂の前駆
体を熱硬化させることにより製作されることから、焼成
に伴う不均一な収縮による変形や寸法のばらつきが発生
することはない。According to this method of manufacturing a wiring board, the wiring board is manufactured by thermosetting a precursor of a thermosetting resin contained in the insulating base and the wiring conductor. No deformation or dimensional variation occurs.
【0010】[0010]
【発明が解決しようとする課題】しかしながら、この無
機絶縁物粉末を熱硬化性樹脂で結合して成る絶縁基板と
金属粉末を熱硬化性樹脂で結合して成る配線導体とから
成る配線基板は、配線導体を構成する金属粉末と熱硬化
性樹脂との接合強度が若干弱く、配線基板に半導体素子
の電極を接続する際等において配線導体に大きな外力が
印加されるとこの外力によって熱硬化性樹脂による金属
粉末同士の結合が外れて配線導体の一部が配線導体より
離脱することがあるため、半導体素子等の電極と配線導
体との電気的接続の信頼性が若干劣るという解決すべき
課題を有していた。However, a wiring board composed of an insulating substrate obtained by bonding the inorganic insulating powder with a thermosetting resin and a wiring conductor obtained by bonding the metal powder with a thermosetting resin, The bonding strength between the metal powder constituting the wiring conductor and the thermosetting resin is slightly weak, and when a large external force is applied to the wiring conductor when connecting the electrodes of the semiconductor element to the wiring board, the external force causes the thermosetting resin to be hardened. The problem that the reliability of the electrical connection between the electrode of a semiconductor element and the wiring conductor is slightly inferior because the connection between the metal powders due to the metal powder is disconnected and a part of the wiring conductor may be separated from the wiring conductor. Had.
【0011】そこで本願出願人は、無機絶縁物粉末を熱
硬化性樹脂で結合して成る絶縁基板が積層されて成る絶
縁基体内部の配線導体を金属粉末を熱硬化性樹脂で結合
して成る材料で形成し、絶縁基体表面の配線導体を金属
箔で形成した配線基板を提案した。Accordingly, the applicant of the present application has proposed a material formed by bonding a metal powder with a thermosetting resin to a wiring conductor inside an insulating substrate formed by laminating an insulating substrate formed by bonding an inorganic insulating powder with a thermosetting resin. And a wiring board in which the wiring conductor on the surface of the insulating base is formed of metal foil.
【0012】この配線基板は、金属粉末と熱硬化性樹脂
とから成る内部配線導体を絶縁基体の内部から表面にか
けて導出するようにして埋設するとともに、絶縁基体表
面に内部配線導体と電気的に接続するようにして金属箔
から成る配線導体を固着して成り、絶縁基体の表面に露
出する絶縁基板となる半硬化状態の前駆体シートに貫通
孔を形成しておくとともに、この貫通孔内に熱硬化して
内部配線導体となる金属ペーストを充填し、さらにこの
前駆体シートの表面に、貫通孔内に充填された金属ペー
ストを覆うようにして表面配線導体となる金属箔を貼着
し、最後にこの前駆体シートを絶縁基体を構成する他の
絶縁基板となる前駆体シートと積層した後、これらを15
0 〜300 ℃の温度で加熱し、熱硬化性樹脂を熱硬化させ
ることにより無機絶縁物粉末を熱硬化性樹脂で結合して
各絶縁基板が積層された絶縁基体を形成するとともに金
属粉末を熱硬化性樹脂で結合して成る内部配線導体を絶
縁基体の内部に埋設させ、かつ絶縁基体の表面に露出す
る絶縁基板に金属箔を絶縁基板の熱硬化性樹脂により固
着することによって製作される。This wiring board is embedded such that an internal wiring conductor made of a metal powder and a thermosetting resin is led out from the inside to the surface of the insulating base, and is electrically connected to the internal wiring conductor on the surface of the insulating base. A through-hole is formed in the precursor sheet in a semi-cured state, which is an insulating substrate exposed on the surface of the insulating substrate, and is fixed in the through-hole. Fill the metal paste which becomes the internal wiring conductor by curing, and further, on the surface of this precursor sheet, paste the metal foil which becomes the surface wiring conductor so as to cover the metal paste filled in the through hole, and finally After laminating this precursor sheet with a precursor sheet to be another insulating substrate constituting the insulating base,
By heating at a temperature of 0 to 300 ° C. and thermosetting the thermosetting resin, the inorganic insulating powder is bonded with the thermosetting resin to form an insulating base on which each insulating substrate is laminated, and the metal powder is heated. It is manufactured by embedding an internal wiring conductor formed of a hardening resin inside an insulating substrate and fixing a metal foil to the insulating substrate exposed on the surface of the insulating substrate with a thermosetting resin of the insulating substrate.
【0013】この配線基板によれば、絶縁基体表面に固
着された配線導体が金属箔から成ることから、配線導体
に半導体素子の電極を接続する際等において配線導体に
大きな外力が印加されても配線導体の一部が配線導体か
ら離脱することはなく、半導体素子等の電極を配線導体
に確実、強固に電気的接続することが可能となる。According to this wiring board, since the wiring conductor fixed to the surface of the insulating base is made of metal foil, even when a large external force is applied to the wiring conductor when an electrode of a semiconductor element is connected to the wiring conductor or the like. Part of the wiring conductor does not separate from the wiring conductor, and the electrodes of the semiconductor element and the like can be securely and firmly electrically connected to the wiring conductor.
【0014】しかしながら、この無機絶縁物粉末を熱硬
化性樹脂で結合して成る絶縁基板を積層した絶縁基体表
面の配線導体を金属箔で形成した配線基板は、半硬化さ
れた前駆体シートに金属箔を貼着する前に、半硬化され
た前駆体シートに含有される熱硬化性樹脂前駆体の硬化
反応がすでに進行し熱硬化性樹脂前駆体中の反応基が減
少していることから、金属箔が貼着された前駆体シート
を150 〜300 ℃の温度で加熱し、熱硬化性樹脂前駆体を
熱硬化させる際、金属箔と絶縁基板とが密に結合され
ず、そのため金属箔から成る表面配線導体と絶縁基体と
の固着力が若干弱く、表面配線導体に半導体素子の電極
を接続する際等に外力が印加されると、表面配線導体が
絶縁基体から剥離してしまうという欠点を誘発した。However, a wiring board on which a wiring conductor on the surface of an insulating substrate formed of a metal foil is formed by laminating an insulating substrate formed by bonding the inorganic insulating powder with a thermosetting resin is formed by adding a metal to a semi-cured precursor sheet. Before attaching the foil, since the curing reaction of the thermosetting resin precursor contained in the semi-cured precursor sheet has already progressed and the reactive groups in the thermosetting resin precursor have been reduced, When the precursor sheet on which the metal foil is adhered is heated at a temperature of 150 to 300 ° C. to thermally cure the thermosetting resin precursor, the metal foil and the insulating substrate are not tightly bonded, and thus the The surface wiring conductor is slightly weakened and the external wiring conductor is peeled off from the insulating base when an external force is applied when connecting the electrode of the semiconductor element to the surface wiring conductor. Provoked.
【0015】さらに、この配線基板によると、表面配線
導体と絶縁基体とが密に結合されていないことから、こ
の部分の耐湿性がやや劣り、配線基板を長期間にわたり
高温多湿の外部大気中に放置すると、この絶縁基板と金
属箔から成る表面配線導体との間に外部大気中の水分が
徐々に浸入し、この浸入した水分が表面配線導体に接続
された内部配線導体に腐食を発生させ、その結果、搭載
する半導体素子を長期間にわたり正常かつ安定に作動さ
せることができなくなってしまうという欠点も招来し
た。Further, according to this wiring board, since the surface wiring conductor and the insulating base are not tightly coupled, the moisture resistance of this portion is slightly inferior, and the wiring board is exposed to a high temperature and high humidity outside atmosphere for a long period of time. When left undisturbed, moisture in the external atmosphere gradually enters between the insulating substrate and the surface wiring conductor made of metal foil, and the infiltrated water causes corrosion of the internal wiring conductor connected to the surface wiring conductor, As a result, the semiconductor element to be mounted cannot operate normally and stably for a long period of time.
【0016】本発明は上記事情に鑑みて案出されたもの
であり、その目的は、無機絶縁物粉末を熱硬化性樹脂で
結合して成る絶縁基体表面に金属箔から成る表面配線導
体を固着して成る配線基板について、金属箔から成る表
面配線導体を絶縁基体に強固に接合することができ、絶
縁基体と金属箔から成る表面配線導体との間からの水分
の浸入が有効に防止され、内部配線導体と表面配線導体
との確実な電気的接続を確保して、搭載する半導体素子
を長期間にわたり正常かつ安定に作動させることが可能
な配線基板を提供することにある。The present invention has been made in view of the above circumstances, and has as its object to fix a surface wiring conductor made of a metal foil to the surface of an insulating substrate formed by bonding an inorganic insulating powder with a thermosetting resin. With respect to the wiring board made of, the surface wiring conductor made of a metal foil can be firmly joined to the insulating base, and infiltration of moisture from between the insulating base and the surface wiring conductor made of the metal foil can be effectively prevented, It is an object of the present invention to provide a wiring board capable of securing a reliable electric connection between an internal wiring conductor and a surface wiring conductor and allowing a mounted semiconductor element to operate normally and stably for a long period of time.
【0017】また本発明の目的は、無機絶縁物粉末を熱
硬化性樹脂で結合して成る絶縁基板表面に金属箔から成
る表面配線導体を固着して成る配線基板の製造方法につ
いて、金属箔から成る表面配線導体を絶縁基体に強固に
接合することができ、絶縁基体と金属箔から成る表面配
線導体との間からの水分の浸入が有効に防止され、内部
配線導体と表面配線導体との確実な電気的接続を確保し
て、搭載する半導体素子を長期間にわたり正常かつ安定
に作動させることが可能な配線基板を得ることができる
製造方法を提供することにある。Another object of the present invention is to provide a method for manufacturing a wiring board comprising a surface wiring conductor made of a metal foil fixed to the surface of an insulating substrate formed by bonding an inorganic insulating powder with a thermosetting resin. Can be firmly bonded to the insulating base, the infiltration of moisture from between the insulating base and the surface wiring conductor made of metal foil can be effectively prevented, and the internal wiring conductor and the surface wiring conductor can be securely connected. An object of the present invention is to provide a manufacturing method capable of obtaining a wiring board capable of ensuring normal electrical connection and operating a mounted semiconductor element normally and stably for a long period of time.
【0018】[0018]
【課題を解決するための手段】本発明の配線基板は、無
機絶縁物粉末をビスマレイミドトリアジン樹脂で結合し
て成り、内部に金属粉末を熱硬化性樹脂で結合して成る
内部配線導体が埋設された絶縁基体の表面に、前記内部
配線導体に電気的に接続された金属箔から成る表面配線
導体をエポキシ樹脂接着層を介して固着して成ることを
特徴とするものである。The wiring board of the present invention comprises an inorganic insulating powder bonded with a bismaleimide triazine resin, and an internal wiring conductor formed by bonding a metal powder with a thermosetting resin is embedded therein. A surface wiring conductor made of a metal foil electrically connected to the internal wiring conductor is fixed to a surface of the insulated base via an epoxy resin adhesive layer.
【0019】また本発明の配線基板の製造方法は、ビス
マレイミドトリアジン樹脂の前駆体に加熱により硬化剤
と反応して硬化するエポキシ樹脂主剤および無機絶縁物
粉末を添加混合して前駆体シートを準備する工程と、こ
の前駆体シートに貫通孔を穿孔するとともにこの貫通孔
内に熱硬化して内部配線導体となる金属ペーストを充填
する工程と、この前駆体シートの表面に表面配線導体と
なる金属箔を、間に前記エポキシ樹脂主剤と反応する硬
化剤を介在させて貼着する工程と、この金属箔が貼着さ
れた前駆体シートを加熱し、前記無機絶縁物粉末を熱硬
化したビスマレイミドトリアジン樹脂で結合して絶縁基
体を形成するとともにこの絶縁基体の内部に内部配線導
体を埋設させ、かつ前記前駆体シート内部のエポキシ樹
脂主剤と硬化剤との反応により形成される硬化したエポ
キシ樹脂接着層を介して金属箔を前記絶縁基体の表面に
固着させる工程とを具備することを特徴とするものであ
る。Further, in the method for producing a wiring board according to the present invention, a precursor sheet is prepared by adding an epoxy resin base material and an inorganic insulating powder which react with a curing agent by heating and cure to a precursor of a bismaleimide triazine resin. And a step of perforating a through hole in the precursor sheet and filling the through hole with a metal paste which is thermoset to become an internal wiring conductor, and a step of forming a metal to become a surface wiring conductor on the surface of the precursor sheet. A step of attaching the foil with a curing agent that reacts with the epoxy resin base agent therebetween, and heating the precursor sheet to which the metal foil is attached, and thermally curing the inorganic insulating powder to form a bismaleimide Forming an insulating substrate by bonding with a triazine resin, embedding an internal wiring conductor inside the insulating substrate, and forming an epoxy resin main agent and a curing agent inside the precursor sheet. It is characterized in that it comprises through an epoxy resin adhesive layer cured formed by the reaction and a step of fixing a metal foil on the surface of the insulating substrate.
【0020】本発明の配線基板によれば、無機絶縁物粉
末をビスマレイミドトリアジン樹脂で結合して成る絶縁
基体表面に金属箔から成る表面配線導体をエポキシ樹脂
接着層を介して固着したことから、絶縁基体と金属箔か
ら成る表面配線導体とがエポキシ樹脂接着層を介して強
固に接合されるとともにエポキシ樹脂接着層が絶縁基体
と表面配線導体との間への水分の浸入を有効に防止す
る。According to the wiring board of the present invention, the surface wiring conductor made of a metal foil is fixed to the surface of the insulating base formed by bonding the inorganic insulating powder with the bismaleimide triazine resin via the epoxy resin adhesive layer. The insulating base and the surface wiring conductor made of a metal foil are firmly joined via the epoxy resin adhesive layer, and the epoxy resin adhesive layer effectively prevents moisture from entering between the insulating base and the surface wiring conductor.
【0021】また本発明の配線基板の製造方法によれ
ば、前駆体シート内部のエポキシ樹脂主剤と、前駆体シ
ートと金属箔との間に介在させた硬化剤とが反応するこ
とにより絶縁基体と金属箔から成る表面配線導体との間
に硬化したエポキシ樹脂接着層が形成され、この硬化し
たエポキシ樹脂接着層により絶縁基体と表面配線導体と
が強固に接合されるとともに絶縁基体と表面配線導体と
の間への水分の浸入を有効に防止可能な配線基板を提供
できる。Further, according to the method for manufacturing a wiring board of the present invention, the epoxy resin main agent inside the precursor sheet reacts with the curing agent interposed between the precursor sheet and the metal foil, thereby forming the insulating substrate. A cured epoxy resin adhesive layer is formed between the surface wiring conductor made of metal foil, and the cured epoxy resin adhesive layer firmly joins the insulating base and the surface wiring conductor, and forms the insulating base and the surface wiring conductor with each other. It is possible to provide a wiring board that can effectively prevent intrusion of moisture into the space.
【0022】[0022]
【発明の実施の形態】次に、本発明を添付の図面に基づ
き詳細に説明する。図1は本発明の配線基板を半導体素
子を収容する半導体素子収納用パッケージに適用した場
合の実施の形態の一例を示し、1は絶縁基体、2は内部
配線導体、3a・3bは表面配線導体である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an example of an embodiment in which the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element, 1 is an insulating base, 2 is an internal wiring conductor, and 3a and 3b are surface wiring conductors. It is.
【0023】絶縁基体1は、例えば酸化珪素・酸化アル
ミニウム・窒化アルミニウム・炭化珪素・チタン酸バリ
ウム・ゼオライト等の無機絶縁物粉末をビスマレイミド
トリアジン樹脂により結合した材料から成り、複数のス
ルーホール4a・4bが形成された2枚の絶縁基板1a
・1bから構成されており、その上面が半導体素子5を
搭載するための搭載部となっており、この搭載部には半
導体素子5が搭載される。The insulating substrate 1 is made of a material obtained by binding an inorganic insulating powder such as silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, zeolite, etc. with a bismaleimide triazine resin. 4b on which two insulating substrates 1a are formed
1b, the upper surface of which is a mounting portion for mounting the semiconductor element 5, on which the semiconductor element 5 is mounted.
【0024】絶縁基板1a・1bに含有される無機絶縁
物粉末は、その粒径が0.1 〜100 μm程度であり、絶縁
基板1a・1bの熱膨張係数を半導体素子5の熱膨張係
数に近いものとする作用を為すとともに絶縁基板1a・
1bに良好な熱伝導性や耐水性、あるいは所定の比誘電
率等を付与する作用を為す。一方、絶縁基板1a・1b
に含有されるビスマレイミドトリアジン樹脂は、無機絶
縁粉末同士を結合し、絶縁基体1を所定の形状に保持す
る作用を為す。The inorganic insulating powder contained in the insulating substrates 1a and 1b has a particle size of about 0.1 to 100 μm, and the coefficient of thermal expansion of the insulating substrates 1a and 1b is close to that of the semiconductor element 5. And the insulating substrate 1a.
1b has an effect of imparting good thermal conductivity and water resistance, or a predetermined relative dielectric constant. On the other hand, the insulating substrates 1a and 1b
The bismaleimide triazine resin contained in the base material serves to bind the inorganic insulating powders together and hold the insulating base 1 in a predetermined shape.
【0025】絶縁基板1a・1bは、無機絶縁物粉末を
靭性に優れるビスマレイミドトリアジン樹脂により結合
して成ることから、配線基板同士が衝突した際等に絶縁
基体1に欠けや割れ・クラック等が発生することはな
い。Since the insulating substrates 1a and 1b are formed by bonding inorganic insulating powder with a bismaleimide triazine resin having excellent toughness, chipping, cracking, cracking, etc., of the insulating substrate 1 when the wiring substrates collide with each other are considered. It does not occur.
【0026】また、絶縁基板1a・1bは、その中に含
有される無機絶縁物粉末の含有量が60重量%未満である
と絶縁基体1の熱膨張係数が半導体素子5の熱膨張係数
と比較して極めて大きなものとなり、半導体素子5が作
動時に発生する熱が半導体素子5と絶縁基体1とに印加
されると両者の熱膨張係数の相違に起因して大きな熱応
力が発生し、半導体素子5に絶縁基体1からの剥離や割
れを発生させやすい傾向にある。他方、無機絶縁物粉末
の含有量が95重量%を超えると無機絶縁物粉末をビスマ
レイミドトリアジン樹脂で強固に結合することが困難と
なる傾向にある。従って、絶縁基板1a・1bの中に含
有される無機絶縁物粉末の含有量は60〜95重量%の範囲
が好ましい。When the content of the inorganic insulating powder contained in the insulating substrates 1a and 1b is less than 60% by weight, the thermal expansion coefficient of the insulating base 1 is compared with that of the semiconductor element 5. When heat generated during the operation of the semiconductor element 5 is applied to the semiconductor element 5 and the insulating base 1, a large thermal stress is generated due to a difference in the coefficient of thermal expansion between the two. No. 5 tends to easily cause peeling or cracking from the insulating substrate 1. On the other hand, if the content of the inorganic insulating powder exceeds 95% by weight, it tends to be difficult to firmly bond the inorganic insulating powder with the bismaleimide triazine resin. Therefore, the content of the inorganic insulating powder contained in the insulating substrates 1a and 1b is preferably in the range of 60 to 95% by weight.
【0027】また絶縁基体1には、各絶縁基板1a・1
b間およびスルーホール4a・4b内に金属粉末を熱硬
化性樹脂で結合して成る内部配線導体2が埋設されてい
る。Each of the insulating substrates 1a and 1
The internal wiring conductor 2 formed by bonding a metal powder with a thermosetting resin is buried between b and the through holes 4a and 4b.
【0028】絶縁基体1の内部に埋設された金属粉末を
熱硬化性樹脂で結合して成る内部配線導体2は、絶縁基
体1の上下面に被着された表面配線導体3a・3bを互
いに電気的に接続する作用を為し、例えば銅・銀・表面
が銀で被覆された銅等の金属粉末をエポキシ樹脂等の熱
硬化性樹脂により結合して成る。The internal wiring conductor 2 formed by bonding metal powder embedded in the insulating base 1 with a thermosetting resin is used to electrically connect the surface wiring conductors 3a and 3b attached to the upper and lower surfaces of the insulating base 1 to each other. For example, a metal powder such as copper, silver, or copper whose surface is coated with silver is bonded by a thermosetting resin such as an epoxy resin.
【0029】金属粉末を熱硬化性樹脂で結合して成る内
部配線導体2に含有される金属粉末は、内部配線導体2
に導電性を付与する作用を為し、内部配線導体2におけ
る含有量が70重量%未満では内部配線導体2の導電性が
悪くなる傾向にあり、また内部配線導体2における含有
量が95重量%を超えると金属粉末を熱硬化性樹脂で強固
に結合することが困難となる傾向にある。従って、金属
粉末を熱硬化性樹脂で結合して成る内部配線導体2に含
有される金属粉末は、内部配線導体2における含有量が
70〜95重量%の範囲が好ましい。The metal powder contained in the internal wiring conductor 2 formed by bonding the metal powder with a thermosetting resin is
When the content in the internal wiring conductor 2 is less than 70% by weight, the conductivity of the internal wiring conductor 2 tends to deteriorate, and when the content in the internal wiring conductor 2 is 95% by weight. If it exceeds 300, it tends to be difficult to firmly bond the metal powder with a thermosetting resin. Therefore, the metal powder contained in the internal wiring conductor 2 formed by bonding the metal powder with the thermosetting resin has a content in the internal wiring conductor 2.
A range of 70-95% by weight is preferred.
【0030】なお、金属粉末を熱硬化性樹脂で結合して
成る内部配線導体2に含有される金属粉末は、その平均
粒径が0.5 μm未満であると金属粉末同士の接触抵抗が
増加して内部配線導体2の電気抵抗が高いものとなる傾
向にある。他方、50μmを超えると絶縁基体1に所定パ
ターンの内部配線導体2を一般に要求される50〜200μ
mの線幅に形成するのが困難となる傾向にある。従っ
て、金属粉末を熱硬化性樹脂で結合して成る内部配線導
体2に含有される金属粉末の平均粒径は0.5 〜50μmと
しておくことが好ましい。If the average particle size of the metal powder contained in the internal wiring conductor 2 formed by bonding the metal powder with a thermosetting resin is less than 0.5 μm, the contact resistance between the metal powders increases. The electrical resistance of the internal wiring conductor 2 tends to be high. On the other hand, when the thickness exceeds 50 μm, the internal wiring conductor 2 having a predetermined pattern is formed on the insulating base 1 in a range of 50 to 200 μm which is generally required.
It tends to be difficult to form a line width of m. Therefore, it is preferable that the average particle diameter of the metal powder contained in the internal wiring conductor 2 formed by bonding the metal powder with a thermosetting resin is 0.5 to 50 μm.
【0031】また、金属粉末を熱硬化性樹脂で結合して
成る内部配線導体2に含有される熱硬化性樹脂は、金属
粉末同士を互いに接触させた状態で結合させるとともに
この内部配線導体2を絶縁基体1に被着させる作用を為
し、ビスフェノールA型エポキシ樹脂・ノボラック型エ
ポキシ樹脂・グリシジルエステル型エポキシ樹脂等のエ
ポキシ樹脂や、フェノール樹脂・ポリイミド樹脂・ビス
マレイミドトリアジン樹脂・熱硬化性ポリフェニレンエ
ーテル樹脂等の熱硬化性樹脂から成る。The thermosetting resin contained in the internal wiring conductor 2 formed by bonding the metal powder with the thermosetting resin is combined with the metal powder in a state where the metal powders are in contact with each other, and the internal wiring conductor 2 is bonded. It acts to adhere to the insulating substrate 1, and is made of epoxy resin such as bisphenol A type epoxy resin, novolak type epoxy resin, glycidyl ester type epoxy resin, phenol resin, polyimide resin, bismaleimide triazine resin, thermosetting polyphenylene ether. It is made of a thermosetting resin such as a resin.
【0032】金属粉末を熱硬化性樹脂で結合して成る内
部配線導体2に含有される熱硬化性樹脂は、内部配線導
体2における含有量が5重量%未満では金属粉末同士を
強固に結合できないとともに内部配線導体2を絶縁基体
1に強固に被着させることが困難となる傾向にある。他
方、内部配線導体2における含有量が30重量%を超える
と金属粉末同士を十分に接触させることが困難となり内
部配線導体2の電気抵抗が大きなものとなる傾向にあ
る。従って、金属粉末を熱硬化性樹脂で結合して成る内
部配線導体2に含有される熱硬化性樹脂は、内部配線導
体2における含有量が5〜30重量%の範囲が好ましい。If the content of the thermosetting resin contained in the internal wiring conductor 2 formed by bonding the metal powder with the thermosetting resin in the internal wiring conductor 2 is less than 5% by weight, the metal powders cannot be firmly bonded to each other. At the same time, it tends to be difficult to firmly adhere the internal wiring conductor 2 to the insulating base 1. On the other hand, when the content in the internal wiring conductor 2 exceeds 30% by weight, it is difficult to bring the metal powders into sufficient contact with each other, and the electric resistance of the internal wiring conductor 2 tends to be large. Therefore, the content of the thermosetting resin contained in the internal wiring conductor 2 formed by bonding the metal powder with the thermosetting resin is preferably in the range of 5 to 30% by weight.
【0033】また絶縁基板1a上面および絶縁基板1b
下面にはスルーホール4a・4bに充填された内部配線
導体2を覆うようにして例えば銅箔等の金属箔から成る
表面配線導体3a・3bが被着されている。The upper surface of the insulating substrate 1a and the insulating substrate 1b
On the lower surface, surface wiring conductors 3a and 3b made of metal foil such as copper foil are attached so as to cover the internal wiring conductor 2 filled in the through holes 4a and 4b.
【0034】絶縁基板1aの上面に被着された表面配線
導体3aは、半導体素子5の各電極を絶縁基体1の内部
に設けられた内部配線導体2に電気的に接続するための
接続パッドとして機能し、これに半導体素子5の各電極
が半田バンプ7を介して接続される。一方、絶縁基板1
bの下面に被着された表面配線導体3bは、絶縁基体1
の内部に設けられた内部配線導体2を外部電気回路基板
に電気的に接続するための接続パッドとして機能し、外
部電気回路基板の配線導体に半田を介して接続される。The surface wiring conductor 3a attached to the upper surface of the insulating substrate 1a serves as a connection pad for electrically connecting each electrode of the semiconductor element 5 to the internal wiring conductor 2 provided inside the insulating base 1. It functions, and each electrode of the semiconductor element 5 is connected thereto via the solder bump 7. On the other hand, the insulating substrate 1
b is attached to the lower surface of the insulating base 1
Functions as connection pads for electrically connecting the internal wiring conductor 2 provided inside the device to an external electric circuit board, and is connected to the wiring conductor of the external electric circuit board via solder.
【0035】絶縁基板1aの上面および絶縁基板1bの
下面に被着された表面配線導体3a・3bは、銅箔等の
金属箔から成り、この表面配線導体3a・3bを形成す
る金属箔はこれを構成する金属原子同士が金属結合によ
り互いに極めて強固に結合していることから、表面配線
導体3aに半導体素子5の電極を接続する際や表面配線
導体3bを外部電気回路基板の配線導体に接続する際等
において表面配線導体3a・3bに大きな外力が印加さ
れても表面配線導体3a・3bの一部が表面配線導体3
a・3bから剥離することはなく、従って半導体素子5
の電極や外部電気回路基板の配線導体を表面配線導体3
a・3bに確実かつ強固に接続することができる。The surface wiring conductors 3a and 3b adhered to the upper surface of the insulating substrate 1a and the lower surface of the insulating substrate 1b are made of metal foil such as copper foil, and the metal foil forming the surface wiring conductors 3a and 3b is Are extremely strongly bonded to each other by metal bonding, so that the electrode of the semiconductor element 5 is connected to the surface wiring conductor 3a or the surface wiring conductor 3b is connected to the wiring conductor of the external electric circuit board. When a large external force is applied to the surface wiring conductors 3a and 3b, for example, when the surface wiring conductors 3a and 3b
a and 3b, so that the semiconductor element 5
Of the electrodes and the wiring conductor of the external electric circuit board to the surface wiring conductor 3
a. 3b can be reliably and firmly connected.
【0036】なお、金属箔から成る表面配線導体3a・
3bは、その露出する表面にニッケルや金等の耐蝕性に
優れ、かつ半田との接合性に優れる金属をめっき法によ
り1〜20μmの厚みに被着させておくと、表面配線導体
3a・3bが酸化腐食することを有効に防止することが
できるとともに表面配線導体3aと半導体素子5の電極
および表面配線導体3bと外部電気回路基板の配線導体
との接続を容易かつ強固に行うことができる。従って、
金属箔から成る表面配線導体3a・3bは、その露出す
る表面にニッケルや金等の耐蝕性に優れ、かつ半田との
接続性に優れる金属をめっき法により1〜20μmの厚み
に被着させておくことが好ましい。It should be noted that the surface wiring conductors 3a.
The surface wiring conductors 3a and 3b are formed by plating a metal having excellent corrosion resistance such as nickel and gold and having excellent bondability with solder to a thickness of 1 to 20 μm on the exposed surface by plating. Can be effectively prevented from being oxidized and corroded, and the connection between the surface wiring conductor 3a and the electrode of the semiconductor element 5 and the surface wiring conductor 3b and the wiring conductor of the external electric circuit board can be easily and firmly performed. Therefore,
The surface wiring conductors 3a and 3b made of metal foil are formed by applying a metal having excellent corrosion resistance such as nickel or gold and having excellent connectivity with solder to a thickness of 1 to 20 μm by plating on the exposed surface. Preferably.
【0037】また金属箔から成る表面配線導体3a・3
bは、絶縁基板1a・1bに硬化したエポキシ樹脂接着
層6a・6bを介して固着している。Surface wiring conductors 3a and 3 made of metal foil
b is fixed to the insulating substrates 1a and 1b via the cured epoxy resin adhesive layers 6a and 6b.
【0038】エポキシ樹脂接着層6a・6bは、ビスフ
ェノールA型エポキシ樹脂やノボラック型エポキシ樹脂
・グリシジルエステル型エポキシ樹脂等のエポキシ樹脂
の硬化物から成り、絶縁基板1a・1bに金属箔から成
る表面配線導体3a・3bを強固に接合して被着させる
とともに絶縁基板1a・1bと金属箔から成る表面配線
導体3a・3bとの間から水分が浸入するのを防止する
作用を為す。The epoxy resin adhesive layers 6a and 6b are made of a cured product of an epoxy resin such as a bisphenol A type epoxy resin or a novolak type epoxy resin or a glycidyl ester type epoxy resin, and the surface wirings made of metal foil are formed on the insulating substrates 1a and 1b. The conductors 3a and 3b are firmly joined and adhered, and also function to prevent moisture from entering between the insulating substrates 1a and 1b and the surface wiring conductors 3a and 3b made of metal foil.
【0039】絶縁基体1は、金属箔から成る表面配線導
体3a・3bが絶縁基板1a・1bにエポキシ樹脂接着
層6a・6bを介して被着されていることから、このエ
ポキシ樹脂接着層6a・6bにより絶縁基板1a・1b
と表面配線導体3a・3bが強固に接合されて固着し、
その結果、半導体素子5の電極を表面配線導体3aに接
続する際や表面配線導体3bを外部電極回路基板に接続
する際等に表面配線導体3a・3bに外力が印加されて
も表面配線導体3a・3bが絶縁基板1a・1bから剥
離することはない。The insulating substrate 1 has the surface wiring conductors 3a and 3b made of metal foil adhered to the insulating substrates 1a and 1b via the epoxy resin adhesive layers 6a and 6b. 6b, the insulating substrates 1a and 1b
And the surface wiring conductors 3a and 3b are firmly joined and fixed,
As a result, even when an external force is applied to the surface wiring conductors 3a and 3b when the electrode of the semiconductor element 5 is connected to the surface wiring conductor 3a or when the surface wiring conductor 3b is connected to the external electrode circuit board, the surface wiring conductor 3a 3b does not separate from the insulating substrates 1a and 1b.
【0040】また、絶縁基体1は、エポキシ樹脂接着層
6a・6bの存在により絶縁基板1a・1bと表面配線
導体3a・3bとの間から水分が浸入することが有効に
防止され、その結果、表面配線導体3a・3bとと内部
配線導体2との間の電気的接続が不確実となることはな
く、搭載する半導体素子5を長期間にわたり正常かつ安
定に作動させることが可能となる。The presence of the epoxy resin adhesive layers 6a and 6b in the insulating base 1 effectively prevents moisture from entering between the insulating substrates 1a and 1b and the surface wiring conductors 3a and 3b. The electrical connection between the surface wiring conductors 3a and 3b and the internal wiring conductor 2 does not become uncertain, and the semiconductor element 5 to be mounted can operate normally and stably for a long period of time.
【0041】なお、エポキシ樹脂接着層6a・6bは、
その厚みが0.5 μm未満では絶縁基板1a・1bと金属
箔から成る表面配線導体3a・3bとを強固に接合する
ことが困難となる傾向にあり、10μmを超えると内部配
線導体2と表面配線導体3a・3bとの間が電気的に断
線してしまう危険性がある。従って、エポキシ樹脂接着
層6a・6bの厚みは0.5 〜10μmの範囲が好ましい。The epoxy resin adhesive layers 6a and 6b are
If the thickness is less than 0.5 μm, it tends to be difficult to firmly join the insulating substrates 1 a and 1 b to the surface wiring conductors 3 a and 3 b made of metal foil, and if it exceeds 10 μm, the internal wiring conductor 2 and the surface wiring conductor There is a risk that the wires 3a and 3b may be electrically disconnected. Therefore, the thickness of the epoxy resin adhesive layers 6a and 6b is preferably in the range of 0.5 to 10 μm.
【0042】かくして本発明の配線基板によれば、絶縁
基体1の搭載部に半導体素子5を搭載するとともに半導
体素子5の各電極を半田バンプ7を介して金属箔から成
る表面配線導体3aに電気的に接続し、最後に絶縁基体
1の上面に図示しない椀状等の蓋体を樹脂等から成る封
止材を介して接合させ、絶縁基体1と蓋体とから成る容
器内部に半導体素子5を封止することによって製品とし
ての半導体装置となる。Thus, according to the wiring board of the present invention, the semiconductor element 5 is mounted on the mounting portion of the insulating base 1 and each electrode of the semiconductor element 5 is electrically connected to the surface wiring conductor 3a made of metal foil via the solder bump 7. And finally, a bowl-shaped lid (not shown) is joined to the upper surface of the insulating base 1 via a sealing material made of resin or the like, and the semiconductor element 5 is placed inside the container formed of the insulating base 1 and the lid. Is sealed to form a semiconductor device as a product.
【0043】次に上述の配線基板の製造方法について説
明する。Next, a method for manufacturing the above-described wiring board will be described.
【0044】先ず、図2(a)に示すようにビスマレイ
ミドトリアジン樹脂の前駆体に加熱により硬化剤と反応
して硬化するエポキシ樹脂主剤および無機絶縁物粉末を
添加混合して成り、各々複数のスルーホール4a・4b
となる貫通孔14a・14bが形成された2枚の前駆体シー
ト11a・11bを準備する。First, as shown in FIG. 2A, a precursor of a bismaleimide triazine resin is added to an epoxy resin base material which reacts with a curing agent by heating and cured by adding an inorganic insulating powder to each of the precursors. Through holes 4a and 4b
Two precursor sheets 11a and 11b having through holes 14a and 14b formed therein are prepared.
【0045】前駆体シート11a・11bは、ビスマレイミ
ドトリアジン樹脂の前駆体にビスフェノールA型エポキ
シ樹脂・ノボラック型エポキシ樹脂・グリシジルエステ
ル型エポキシ樹脂等のエポキシ樹脂主剤および酸化珪素
・酸化アルミニウム・窒化アルミニウム・炭化珪素・チ
タン酸バリウム・ゼオライト等の無機絶縁物粉末ならび
にメチルセルソルブ等の溶剤を添加混合して得たペース
トを従来周知のドクターブレード法を採用してシート状
となすとともに約25〜100 ℃の温度で1〜60分加熱して
内部に含有されるビスマレイミドトリアジン樹脂の前駆
体を半硬化させ、これに従来周知の打ち抜き加工を施す
ことによって製作される。The precursor sheets 11a and 11b are made of a precursor of a bismaleimide triazine resin such as a bisphenol A type epoxy resin, a novolak type epoxy resin, a glycidyl ester type epoxy resin or the like, and a silicon oxide, aluminum oxide, aluminum nitride, A paste obtained by adding and mixing an inorganic insulating powder such as silicon carbide, barium titanate or zeolite and a solvent such as methylcellosolve is formed into a sheet by employing a conventionally known doctor blade method, and is formed at about 25 to 100 ° C. The bismaleimide triazine resin contained therein is semi-cured by heating at a temperature of 1 to 60 minutes, and is subjected to a conventionally known punching process.
【0046】前駆体シート11a・11bに含有されるエポ
キシ樹脂主剤は、後述するように、前駆体シート11a・
11bに表面配線導体3a・3bとなる金属箔を間にエポ
キシ樹脂主剤と反応する硬化剤を介在させて貼着し、こ
れを加熱して金属箔から成る表面配線導体3a・3bが
固着された絶縁基板1a・1bとする際、前駆体シート
11a・11bと金属箔との間に滲出して硬化することによ
り、絶縁基板1a・1bに表面配線導体3a・3bを固
着するためのエポキシ樹脂接着層6a・6bを形成する
作用を為す。The epoxy resin base contained in the precursor sheets 11a and 11b is, as described later, the precursor sheet 11a and 11b.
A metal foil to be the surface wiring conductors 3a and 3b was adhered to 11b with a curing agent that reacts with the epoxy resin base agent interposed therebetween, and this was heated to fix the surface wiring conductors 3a and 3b made of the metal foil. When forming the insulating substrates 1a and 1b, the precursor sheet
By leaching and hardening between the metal foils 11a and 11b, the epoxy resin adhesive layers 6a and 6b for fixing the surface wiring conductors 3a and 3b to the insulating substrates 1a and 1b are formed.
【0047】なお、前駆体シート11a・11bに含有され
るエポキシ樹脂主剤は、ビスマレイミドトリアジン樹脂
の前駆体とエポキシ樹脂主剤との合計量に対する含有量
が1重量%未満では、後述するように半硬化シート11a
・11bに間にエポキシ樹脂主剤と反応する硬化剤を介在
させて金属箔を貼着し、これを加熱して金属箔から成る
表面配線導体3a・3bが固着された絶縁基板1a・1
bとなす際、絶縁基板1a・1bに表面配線導体3a・
3bを固着するためのエポキシ樹脂接着層6a・6bが
十分に形成されず、表面配線導体3a・3bを絶縁基板
1a・1bにエポキシ樹脂接着層6a・6bを介して強
固に固着することが困難となる傾向にある。他方、10重
量%を超えると、絶縁基板1a・1b内に未硬化のエポ
キシ樹脂主剤が多量に残存して絶縁基板1a・1bの強
度が低いものとなる傾向にある。If the content of the epoxy resin main ingredient contained in the precursor sheets 11a and 11b is less than 1% by weight based on the total amount of the bismaleimide triazine resin precursor and the epoxy resin main ingredient, as described later, Cured sheet 11a
A metal foil is adhered to the base material 11b with a curing agent that reacts with the main component of the epoxy resin interposed therebetween, and heated to heat the insulating substrate 1a / 1 on which the surface wiring conductors 3a / 3b made of the metal foil are fixed.
b, the surface wiring conductors 3a.
The epoxy resin adhesive layers 6a and 6b for fixing the 3b are not sufficiently formed, and it is difficult to firmly fix the surface wiring conductors 3a and 3b to the insulating substrates 1a and 1b via the epoxy resin adhesive layers 6a and 6b. It tends to be. On the other hand, if it exceeds 10% by weight, a large amount of the uncured epoxy resin remains in the insulating substrates 1a and 1b, and the strength of the insulating substrates 1a and 1b tends to be low.
【0048】従って、前駆体シート11a・11bに含有さ
れるエポキシ樹脂主剤は、ビスマレイミドトリアジン樹
脂の前駆体とエポキシ樹脂主剤との合計量に対する含有
量が1〜10重量%の範囲が好ましい。Therefore, the content of the epoxy resin main component contained in the precursor sheets 11a and 11b is preferably in the range of 1 to 10% by weight based on the total amount of the bismaleimide triazine resin precursor and the epoxy resin main component.
【0049】次に、図2(b)に示すように前駆体シー
ト11bの上面および前駆体シート11a・11bに形成され
た貫通孔14a・14b内に、熱硬化して内部内部配線導体
2となる金属ペースト12を従来周知のスクリーン印刷法
および充填法を採用して所定パターンに印刷塗布および
充填する。Next, as shown in FIG. 2 (b), the internal internal wiring conductor 2 is thermally cured into the upper surface of the precursor sheet 11b and the through holes 14a and 14b formed in the precursor sheets 11a and 11b. The metal paste 12 is printed and applied in a predetermined pattern by using a conventionally known screen printing method and filling method.
【0050】なお、内部配線導体2となる金属ペースト
12としては、例えば粒径が0.1 〜20μm程度の銅等の金
属粉末にビスフェノールA型エポキシ樹脂・ノボラック
型エポキシ樹脂・グリシジルエステル型エポキシ樹脂等
のエポキシ樹脂およびアミン系硬化剤・イミダゾール系
硬化剤・酸無水物系硬化剤等の硬化剤等を添加混合しペ
ースト状となしたものが使用される。The metal paste which becomes the internal wiring conductor 2
For example, epoxy resin such as bisphenol A type epoxy resin, novolak type epoxy resin, glycidyl ester type epoxy resin and amine curing agent, imidazole curing agent, metal powder such as copper having a particle size of about 0.1 to 20 μm A paste obtained by adding and mixing a curing agent such as an acid anhydride-based curing agent is used.
【0051】次に、図2(c)に示すように、前駆体シ
ート11aの上面と11bの下面に加熱によりエポキシ樹脂
主剤と反応する硬化剤16a・16bを塗布する。Next, as shown in FIG. 2 (c), curing agents 16a and 16b which react with the epoxy resin base material by heating are applied to the upper surface of the precursor sheet 11a and the lower surface of the precursor sheet 11b.
【0052】前駆体シート11a・11bの下面に塗布され
た硬化剤16a・16bは、後述するように、前駆体シート
11a・11bに表面配線導体3a・3bとなる金属箔を貼
着し、これを加熱して絶縁基板1a・1bとなす際、前
駆体シート11a・11bに含有されるエポキシ樹脂主剤を
誘導して前駆体シート11a・11bと金属箔との間に滲出
させるとともにこのエポキシ樹脂主剤と反応して絶縁基
板1a・1bと表面配線導体3a・3bとの間に硬化し
たエポキシ樹脂接着層6a・6bを形成する作用を為
す。The curing agents 16a and 16b applied to the lower surfaces of the precursor sheets 11a and 11b
When a metal foil to be the surface wiring conductors 3a and 3b is adhered to 11a and 11b and heated to form the insulating substrates 1a and 1b, the epoxy resin base contained in the precursor sheets 11a and 11b is induced. The epoxy resin adhesive layers 6a and 6b which are exuded between the precursor sheets 11a and 11b and the metal foil and which have been cured by reacting with the epoxy resin base material between the insulating substrates 1a and 1b and the surface wiring conductors 3a and 3b are formed. It acts to form.
【0053】前駆体シート11a・11b下面に塗布される
硬化剤16a・16bは、アミン系硬化剤・酸無水物系硬化
剤・イミダゾール系硬化剤等の硬化剤が使用される。ま
た、前駆体シート11a上面や11b下面の1cm2 当たり
の塗布量が0.1 mg未満であると前駆体シート11a・11
bに表面配線導体3a・3bとなる金属箔を貼着し、こ
れを加熱して絶縁基板1a・1bとなす際に、絶縁基板
1a・1bと金属箔から成る表面配線導体3a・3bの
間に十分な量のエポキシ樹脂接着層6a・6bを形成す
ることが困難となる傾向にあり、他方、5mgを超える
と絶縁基体1内部の内部配線導体2と表面配線導体3a
・3bとの間における電気的接続の信頼性が低いものと
なってしまう傾向にある。従って、前駆体シート11a・
11bに塗布される硬化剤16a・16bは、前駆体シート11
a上面や11b下面1cm2 当りの塗布量を0.1 〜5mg
としておくことが好ましい。As the curing agents 16a and 16b applied to the lower surfaces of the precursor sheets 11a and 11b, curing agents such as amine curing agents, acid anhydride curing agents, and imidazole curing agents are used. If the amount of application per 1 cm 2 of the upper surface or the lower surface of the precursor sheet 11a is less than 0.1 mg, the precursor sheets 11a
b, a metal foil to be the surface wiring conductors 3a and 3b is adhered to the substrate and heated to form the insulating substrates 1a and 1b. It tends to be difficult to form a sufficient amount of the epoxy resin adhesive layers 6a and 6b on the other hand, while if it exceeds 5 mg, the internal wiring conductor 2 and the surface wiring conductor 3a in the insulating base 1
-The reliability of the electrical connection with 3b tends to be low. Therefore, the precursor sheet 11a
The curing agents 16a and 16b applied to the precursor sheet 11b
0.1 to 5 mg of coating amount per 1 cm 2 of a top surface or 11 b bottom surface
It is preferable to keep
【0054】さらに、前駆体シート11a・11bに塗布さ
れる硬化剤16a・16bをアミン系の硬化剤とすると、こ
のアミン系硬化剤が表面配線導体3a・3bとなる金属
箔表面の酸化膜を除去し、その結果、金属箔からなる表
面配線導体3a・3bと絶縁基体1内部の内部配線導体
2との間の電気的接続抵抗を低いものとすることができ
る。従って、前駆体11a・11bに塗布する硬化剤16a・
16bは、アミン系の硬化剤としておくことが好ましい。Further, when the curing agents 16a and 16b applied to the precursor sheets 11a and 11b are amine-based curing agents, the amine-based curing agent removes an oxide film on the surface of the metal foil to be the surface wiring conductors 3a and 3b. As a result, the electrical connection resistance between the surface wiring conductors 3a and 3b made of metal foil and the internal wiring conductor 2 inside the insulating base 1 can be reduced. Therefore, the curing agent 16a applied to the precursors 11a and 11b
16b is preferably used as an amine-based curing agent.
【0055】次に図2(d)に示すように、前駆体シー
ト11a上面および11b下面に、表面配線導体3a・3b
となる金属箔13a・13bを硬化剤16a・16bを介して所
定パターンに貼着する。Next, as shown in FIG. 2D, the surface wiring conductors 3a and 3b are provided on the upper surface and the lower surface of the precursor sheet 11a.
The metal foils 13a and 13b to be used are adhered in a predetermined pattern via the curing agents 16a and 16b.
【0056】表面配線導体3a・3bとなる金属箔13a
・13bは、銅等の良導電性の金属から成り、例えば銅か
ら成る場合、ポリエチレンテレフタレート(PET)か
ら成る転写シート上に銅箔を貼着するとともにこの銅箔
を従来周知のフォトリソグラフィー技術を採用して所定
のパターンにエッチングし、しかる後、転写シート上の
銅箔を前駆体シート11aの上面および前駆体シート11b
の下面に押圧密着させるとともにこれらから転写シート
を除去することによって前駆体シート11a・11cに所定
パターンに貼着される。Metal foil 13a to be surface wiring conductors 3a and 3b
13b is made of a highly conductive metal such as copper. For example, in the case of copper, a copper foil is stuck on a transfer sheet made of polyethylene terephthalate (PET) and the copper foil is applied to a conventionally known photolithography technique. The copper foil on the transfer sheet is then applied to the upper surface of the precursor sheet 11a and the precursor sheet 11b.
By pressing and adhering to the lower surface of the sheet and removing the transfer sheet therefrom, the sheet is adhered to the precursor sheets 11a and 11c in a predetermined pattern.
【0057】最後に、前駆体シート11a・11bを上下に
積層して約150 〜300 ℃の温度および約4〜100 kgf
/cm2 の圧力でホットプレスするとともにさらに必要
に応じて150 〜300 ℃の温度で加熱し、前駆体シート11
a・11bに含有されるビスマレイミドトリアジン樹脂の
前駆体を完全に硬化させて無機絶縁物粉末を熱硬化した
ビスマレイミドトリアジン樹脂で結合した絶縁基板1a
・1bとなすとともに金属ペースト12中の熱硬化性樹脂
を熱硬化させることにより、金属粉末を熱硬化性樹脂で
結合して成る内部配線導体2を絶縁基板1a・1bに被
着させ、かつ各絶縁基板1a上面・1b下面に前駆体シ
ート11a・11b内のエポキシ樹脂主剤と硬化剤16a・16
bとの反応により形成された硬化したエポキシ樹脂接着
層6a・6bで金属箔13a・13bから成る表面配線導体
3a・3bを固着することによって、図1に示すような
本発明の配線基板が完成する。Finally, the precursor sheets 11a and 11b are laminated one on top of the other, and the temperature is about 150 to 300 ° C. and about 4 to 100 kgf.
/ Cm 2 and further heated at a temperature of 150 to 300 ° C., if necessary, to obtain a precursor sheet 11.
a. Insulating substrate 1a in which the precursor of bismaleimide triazine resin contained in 11b is completely cured and the inorganic insulating powder is bonded with bismaleimide triazine resin thermally cured.
1b and by thermosetting the thermosetting resin in the metal paste 12, the internal wiring conductor 2 formed by bonding the metal powder with the thermosetting resin is adhered to the insulating substrates 1a and 1b. The epoxy resin base and the curing agents 16a and 16 in the precursor sheets 11a and 11b are provided on the upper and lower surfaces of the insulating substrate 1a.
By fixing the surface wiring conductors 3a and 3b composed of the metal foils 13a and 13b with the cured epoxy resin adhesive layers 6a and 6b formed by the reaction with the wiring board b, the wiring board of the present invention as shown in FIG. 1 is completed. I do.
【0058】この場合、ホットプレスする前の前駆体シ
ート11a・11bに含まれるエポキシ樹脂主剤および前駆
体シート11a・11bに塗布された硬化剤16a・16bは互
いに反応しておらず、反応基を多量に含むことから、前
駆体シート11a・11bを加熱して絶縁基板1a・1bと
なすと、前駆体シート11a・11b内部に含まれるエポキ
シ樹脂主剤が前駆体シート11a・11bに塗布された硬化
剤16a・16bに誘導されて半硬化シート11a・11bと表
面配線導体3a・3bとなる金属箔13a・13bとの間に
滲出するとともに硬化剤16a・16bと反応して絶縁層1
a・1bと表面配線導体3a・3bとの間に強固で密に
硬化したエポキシ樹脂接着層6a・6bを形成し、その
結果、このエポキシ樹脂接着層6a・6bにより絶縁基
板1a・1bと表面配線導体3a・3bとが強固に接合
されるとともに各絶縁基板1a・1bと表面配線導体3
a・3bとの間からの水分の浸入を有効に防止可能な耐
湿性に優れた配線基板を提供することができる。In this case, the epoxy resin base material contained in the precursor sheets 11a and 11b before hot pressing and the curing agents 16a and 16b applied to the precursor sheets 11a and 11b do not react with each other, and a reactive group is formed. When the precursor sheets 11a and 11b are heated to form the insulating substrates 1a and 1b, the epoxy resin main agent contained in the precursor sheets 11a and 11b is applied to the precursor sheets 11a and 11b because the precursor sheets 11a and 11b are cured. The insulating layer 1 is guided by the agents 16a and 16b and exudes between the semi-cured sheets 11a and 11b and the metal foils 13a and 13b serving as the surface wiring conductors 3a and 3b, and reacts with the curing agents 16a and 16b.
A strong and tightly cured epoxy resin adhesive layer 6a, 6b is formed between the a.1b and the surface wiring conductors 3a, 3b. As a result, the epoxy resin adhesive layer 6a, 6b allows the insulating substrate 1a, 1b to be in contact with the surface. The wiring conductors 3a and 3b are firmly joined, and each of the insulating substrates 1a and 1b is
It is possible to provide a wiring board excellent in moisture resistance, which can effectively prevent intrusion of moisture from between the a and 3b.
【0059】またこの場合、前駆体シート11a・11bお
よび金属ペースト12は熱硬化時に収縮することは殆どな
く、従って、得られる配線基板に変形や寸法のばらつき
が発生することは皆無であり、半導体素子と配線導体と
を正確に接続することが可能となる。In this case, the precursor sheets 11a and 11b and the metal paste 12 hardly shrink during thermosetting, so that the resulting wiring board does not undergo any deformation or dimensional variation. The element and the wiring conductor can be accurately connected.
【0060】なお、本発明は上述の実施の形態の例に限
定されるものではなく、本発明の要旨を逸脱しない範囲
であれば種々の変更は可能である。例えば上述の実施の
形態例では本発明の配線基板を半導体素子を収容する半
導体素子収納用パッケージに適用した場合を例にとって
説明したが、これを混成集積回路基板等に用いられる配
線基板に適用してもよい。The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, in the above-described embodiment, the case where the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element has been described as an example, but this is applied to a wiring board used for a hybrid integrated circuit board or the like. You may.
【0061】また、上述の実施の形態の例では、配線基
板は2枚の絶縁基板が積層されることにより形成されて
いたが、配線基板は1枚あるいは3枚以上の絶縁基板が
積層されることにより形成されていてもよい。In the above embodiment, the wiring substrate is formed by laminating two insulating substrates. However, the wiring substrate is formed by laminating one or three or more insulating substrates. May be formed.
【0062】さらに上述の実施の形態の例では、金属箔
から成る表面配線導体3a・3bは、前駆体シート11a
・11bに所定パターンにエッチングされた金属箔13a・
13bを転写することによって形成されたが、前駆体シー
ト11aの上面および前駆体シート11bの下面の略全面に
広面積の金属箔を貼着し、これを前駆体シート11a・11
bを加熱して絶縁基板1a・1bとなす前、あるいは絶
縁基板1a・1bとなした後に所定パターンにエッチン
グすることによって形成されても良い。Further, in the above embodiment, the surface wiring conductors 3a and 3b made of metal foil are used as the precursor sheet 11a.
Metal foil 13a etched in a predetermined pattern on 11b
13b, which was formed by transferring, a large area metal foil was adhered to almost the entire upper surface of the precursor sheet 11a and the lower surface of the precursor sheet 11b.
It may be formed by heating b to form a predetermined pattern before forming the insulating substrates 1a and 1b or after forming the insulating substrates 1a and 1b.
【0063】[0063]
【発明の効果】本発明の配線基板によれば、無機絶縁物
粉末をビスマレイミドトリアジン樹脂で結合して成る絶
縁基体に金属箔から成る表面配線導体をエポキシ樹脂接
着層を介して固着したことから、絶縁基体と表面配線導
体とがエポキシ樹脂接着層を介して強固に接合され、そ
の結果、表面配線導体に外力が印加されても表面配線導
体が絶縁基体から剥離することはない。According to the wiring board of the present invention, a surface wiring conductor made of a metal foil is fixed to an insulating base formed by bonding an inorganic insulating powder with a bismaleimide triazine resin via an epoxy resin adhesive layer. The insulating base and the surface wiring conductor are firmly joined via the epoxy resin adhesive layer. As a result, even when an external force is applied to the surface wiring conductor, the surface wiring conductor does not separate from the insulating base.
【0064】さらに、本発明の配線基板によれば、エポ
キシ樹脂接着層により絶縁基体土俵面配線導体との間か
らの水分の浸入が有効に防止され、その結果、表面配線
導体と内部配線導体との電気的接続が浸入した水分に起
因して不確実となることはなく、搭載する半導体素子を
長期間にわたり正常かつ安定に作動させることが可能で
ある。Further, according to the wiring board of the present invention, the epoxy resin adhesive layer effectively prevents moisture from intruding between the wiring conductor on the insulating substrate and the surface, and as a result, the surface wiring conductor and the internal wiring conductor can be prevented. Does not become uncertain due to the infiltrated moisture, and the semiconductor element to be mounted can operate normally and stably for a long period of time.
【0065】また本発明の配線基板の製造方法によれ
ば、ビスマレイミドトリアジン樹脂の前駆体に加熱によ
り硬化剤と反応して硬化するエポキシ樹脂主剤および無
機絶縁物粉末を添加混合した複数の前駆体シートを準備
するとともにこの前駆体シートに表面配線導体となる金
属箔を間にエポキシ樹脂主剤と反応する硬化剤を介在さ
せて貼着し、これを加熱することにより絶縁物粉末を熱
硬化したビスマレイミドトリアジン樹脂で結合した絶縁
基体に金属箔から成る表面配線導体が固着された配線基
板を得ることから、絶縁基体と表面配線導体との間に前
駆体シート内部のエポキシ樹脂主剤と硬化剤との反応に
より形成された硬化したエポキシ樹脂接着層が形成さ
れ、このエポキシ樹脂接着層を介して絶縁基体と表面配
線導体とが強固に接合した、耐湿性に優れる配線基板を
提供することができる。Further, according to the method of manufacturing a wiring board of the present invention, a plurality of precursors obtained by adding and mixing an epoxy resin base material and an inorganic insulating powder which are cured by reacting with a curing agent by heating to a precursor of a bismaleimide triazine resin. Prepare a sheet and attach a metal foil to be a surface wiring conductor to this precursor sheet with a curing agent that reacts with the epoxy resin base material interposed between them, and then heat this to heat-cured insulator powder to cure the insulating powder. Since a wiring board having a surface wiring conductor made of metal foil fixed to an insulating base bonded with a maleimide triazine resin is obtained, the epoxy resin main agent and the curing agent in the precursor sheet are interposed between the insulating base and the surface wiring conductor. A cured epoxy resin adhesive layer formed by the reaction is formed, and the insulating base and the surface wiring conductor are firmly joined via the epoxy resin adhesive layer. And, it is possible to provide a wiring board having excellent moisture resistance.
【図1】本発明の配線基板の実施の形態の一例を示す断
面図である。FIG. 1 is a sectional view showing an example of an embodiment of a wiring board of the present invention.
【図2】(a)〜(d)はそれぞれ図1に示す配線基板
の製造方法を説明するための工程毎の断面図である。2 (a) to 2 (d) are cross-sectional views for respective steps for explaining a method of manufacturing the wiring board shown in FIG. 1;
1・・・・・・・絶縁基体 1a、1b・・・絶縁基板 2・・・・・・・内部配線導体 3a、3b・・・表面配線導体 4a、4b・・・スルーホール 5・・・・・・・半導体素子 6a、6b・・・エポキシ樹脂接着層 11a、11b・・・前駆体シート 12・・・・・・・金属ペースト 13a、13b・・・金属箔 14a、14b・・・貫通孔 16a、16b・・・硬化剤 1 ... Insulating base 1a, 1b ... Insulating substrate 2 ... Internal wiring conductors 3a, 3b ... Surface wiring conductors 4a, 4b ... Through hole 5 ... ··· Semiconductor element 6a, 6b ··· Epoxy resin adhesive layer 11a, 11b ··· Precursor sheet 12 ··· Metal paste 13a and 13b ··· Metal foil 14a and 14b ··· Holes 16a, 16b: Hardener
Claims (2)
ジン樹脂で結合して成り、内部に金属粉末を熱硬化性樹
脂で結合して成る内部配線導体が埋設された絶縁基体の
表面に、前記内部配線導体に電気的に接続された金属箔
から成る表面配線導体をエポキシ樹脂接着層を介して固
着して成ることを特徴とする配線基板。An internal wiring conductor is formed by bonding an inorganic insulating powder with a bismaleimide triazine resin and an internal wiring conductor formed by bonding a metal powder with a thermosetting resin. A wiring board comprising a surface wiring conductor made of a metal foil electrically connected to a conductor and fixed through an epoxy resin adhesive layer.
に加熱により硬化剤と反応して硬化するエポキシ樹脂主
剤および無機絶縁物粉末を添加混合して前駆体シートを
準備する工程と、該前駆体シートに貫通孔を穿孔すると
ともに該貫通孔内に熱硬化して内部配線導体となる金属
ペーストを充填する工程と、該前駆体シートの表面に表
面配線導体となる金属箔を、間に前記エポキシ樹脂主剤
と反応する硬化剤を介在させて貼着する工程と、該金属
箔が貼着された前駆体シートを加熱し、前記無機絶縁物
粉末を熱硬化したビスマレイミドトリアジン樹脂で結合
して絶縁基体を形成するとともに該絶縁基体の内部に内
部配線導体を埋設させ、かつ前記前駆体シート内部のエ
ポキシ樹脂主剤と硬化剤との反応により形成される硬化
したエポキシ樹脂接着層を介して金属箔を前記絶縁基体
の表面に固着させる工程とを具備することを特徴とする
配線基板の製造方法。2. A step of adding and mixing an epoxy resin base material and an inorganic insulating powder which react with a curing agent by heating to a precursor of a bismaleimide triazine resin to prepare a precursor sheet; A step of forming a through-hole and filling the through-hole with a metal paste that is heat-cured to become an internal wiring conductor, and a metal foil that becomes a surface wiring conductor on the surface of the precursor sheet, and the epoxy resin base agent is interposed therebetween. Bonding the metal foil with the precursor sheet to which the metal foil is bonded, bonding the inorganic insulating powder with a thermoset bismaleimide triazine resin to form an insulating substrate. Forming and embedding an internal wiring conductor inside the insulating base; and a cured epoxy resin contact formed by a reaction between the epoxy resin main agent and the curing agent inside the precursor sheet. Fixing the metal foil to the surface of the insulating base via a deposition layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9233154A JPH1174649A (en) | 1997-08-28 | 1997-08-28 | Wiring board and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9233154A JPH1174649A (en) | 1997-08-28 | 1997-08-28 | Wiring board and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1174649A true JPH1174649A (en) | 1999-03-16 |
Family
ID=16950572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9233154A Pending JPH1174649A (en) | 1997-08-28 | 1997-08-28 | Wiring board and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1174649A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1243026A1 (en) * | 1999-12-21 | 2002-09-25 | Advanced Micro Devices, Inc. | Organic packages with solders for reliable flip chip connections |
US7164198B2 (en) * | 2001-10-31 | 2007-01-16 | Shinko Electric Industres, Co., Ltd. | Multilayered substrate for semiconductor device |
-
1997
- 1997-08-28 JP JP9233154A patent/JPH1174649A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1243026A1 (en) * | 1999-12-21 | 2002-09-25 | Advanced Micro Devices, Inc. | Organic packages with solders for reliable flip chip connections |
JP2003518743A (en) * | 1999-12-21 | 2003-06-10 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | Organic packages with solder for reliable flip-chip connection |
US7164198B2 (en) * | 2001-10-31 | 2007-01-16 | Shinko Electric Industres, Co., Ltd. | Multilayered substrate for semiconductor device |
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