CN107919272A - Amorphous silicon membrane film build method - Google Patents
Amorphous silicon membrane film build method Download PDFInfo
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- CN107919272A CN107919272A CN201711163435.8A CN201711163435A CN107919272A CN 107919272 A CN107919272 A CN 107919272A CN 201711163435 A CN201711163435 A CN 201711163435A CN 107919272 A CN107919272 A CN 107919272A
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- Prior art keywords
- film forming
- film
- chamber
- silicon
- build method
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000012528 membrane Substances 0.000 title claims abstract description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910052786 argon Inorganic materials 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 238000009423 ventilation Methods 0.000 claims abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910003828 SiH3 Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of amorphous silicon membrane film build method, comprising：Amorphous silicon membrane film build method, comprising processing step：The first step, the silicon substrate that will be covered with silicon dioxide layer carry out the pre-heat treatment；Second step, using plasma processing silicon substrate；3rd step, to carrying out ventilation preheating in film forming chamber room；4th step, first time non-crystalline silicon film forming is carried out in film forming chamber room to silicon substrate；5th step, is passed through argon gas in chamber；6th step, carries out second of non-crystalline silicon film forming in film forming chamber room；7th step, is passed through argon gas in chamber；8th step, carries out third time non-crystalline silicon film forming；9th step, is passed through argon gas in chamber；Tenth step, silicon substrate is removed and is cooled down outside chamber.Amorphous silicon membrane film build method of the present invention, the presence of bulge when can effectively prevent from forming a film, meanwhile, the operability of this method is stronger, can obtain the higher non-crystalline silicon of planarization degree.
Description
Technical field
The present invention relates to semiconductor integrated circuit field, the amorphous silicon membrane more particularly to used during MEMS technology
The film build method of material.
Background technology
Non-crystalline silicon is the allotropic form of silicon, can be deposited in the form of a film on various substrates, is various electronics
Using some unique functions of offer.Non-crystalline silicon is used in the MEMS (MEMS) and Nano electro-mechanical system of large-scale production
(NEMS), solar cell, microcrystal silicon and micro- non-crystalline silicon, even for the rolling technology technology on various substrates be all useful
's.
The main chemical equation of the hydrogenation non crystal silicon film obtained at present by PECVD methods is as follows：
SiH4(g)→Si(s)+2H2(g)
Reaction principle is：Silane SiH4→SiH3Predecessor → SiH3H is separated out with SiH2, non-crystalline silicon prepared by the method is all
Containing 10~15% hydrogen, stablize configuration for SiH, in film forming procedure, the continuous stacking of SiH groups, the hydrogen atom in SiH keys is such as
Fruit spins off from lattice network not in time, causes to release hydrogen not in time, so as to produce the protuberance and film separation of air bubble-shaped.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of amorphous silicon membrane film build method, can effectively prevent
The presence of bulge during film forming.
A kind of to solve the above problems, amorphous silicon membrane film build method of the present invention：Include following processing step：
The first step, the silicon substrate that will be covered with silicon dioxide layer carry out the pre-heat treatment；
Second step, using plasma processing silicon substrate；
3rd step, to carrying out ventilation preheating in film forming chamber room；
4th step, first time non-crystalline silicon film forming is carried out in film forming chamber room to silicon substrate；
5th step, is passed through argon gas in chamber；
6th step, carries out second of non-crystalline silicon film forming in film forming chamber room；
7th step, is passed through argon gas in chamber；
8th step, carries out third time non-crystalline silicon film forming；
9th step, is passed through argon gas in chamber；
Tenth step, silicon substrate is removed and is cooled down outside chamber.
Further, after the 4th step, the 6th step, the 8th step non-crystalline silicon film forming, silicon substrate is protected in film forming chamber room
Hold state 10~30 seconds.
Further, the film forming chamber forms a film chamber for CVD, and film-forming temperature is 200~400 DEG C, silane flow rate for 1~
200ml/min, film forming chamber pressure are 10~1000torr.
Further, the 4th step to the 8th step, is for circulating repetition, according to the thickness requirement specifically deposited and reality
Situation, can select less or more cycle-indexes, to reach the non-crystalline silicon thickness requirement of this batch whole wafer.Film forming
Substep number it is more, the quality of film is better, but in view of process time cost, it is necessary in specific cycle-index and during technique
Balance is obtained between length.
Further, the gross thickness of the final non-crystalline silicon film forming is
Amorphous silicon membrane film build method of the present invention, the presence of bulge when can effectively prevent from forming a film, meanwhile, should
The operability of method is stronger, can obtain the higher non-crystalline silicon of planarization degree.
Brief description of the drawings
Fig. 1 is present invention process flow chart.
Embodiment
By the introduction of background section it is known that in non-crystalline silicon film forming procedure, temperature is higher, hydrogeneous active group
Group's activity improves, and dispersion surface energy enhancing, is conducive to SiH groups and is attached to appropriate surface location, reach in silicon body material
Equilibrium state of the surface growth of hydrogeneous group with releasing hydrogen process.So the method for substep film forming can effectively discharge hydrogen, subtract
The appearance of few bulge.
Based on above-mentioned principle, amorphous silicon membrane film build method of the present invention, includes following processing step：
The first step, the silicon substrate that will be covered with silicon dioxide layer carry out the pre-heat treatment；
Second step, using plasma processing silicon substrate；
3rd step, to carrying out ventilation preheating in CVD film forming chambers room；
4th step, first time non-crystalline silicon film forming is carried out in film forming chamber room to silicon substrate；
5th step, is passed through argon gas in chamber；
6th step, carries out second of non-crystalline silicon film forming in film forming chamber room；
7th step, is passed through argon gas in chamber；
8th step, carries out third time non-crystalline silicon film forming.
9th step, is passed through argon gas in chamber；Above-mentioned is circulation step since the 4th step, and the present embodiment is lifted three times with circulating
Example, but according to the thickness requirement specifically deposited and actual conditions, less or more cycle-indexes can be selected, such as only
Circulation primary, or three times more than.In a word to reach the non-crystalline silicon thickness requirement of this batch whole wafer.Work according to the invention
Skill principle, the substep number of film forming is more, and the quality of film is better, because in the case that the thickness finally to form a film is fixed, substep
Number is more, it is average often walk formation thickness it is thinner, the release of hydrogen atom is more abundant.But consider process time cost, this
Field technology personnel need to consider the technological parameter for obtaining a balance between specific cycle-index and technique duration.
Under typical technological requirement, the gross thickness of final non-crystalline silicon film forming isIn addition, in every step amorphous
After silicon film-forming process, silicon substrate is kept in film forming chamber room a period of time, typical recommended value is 10~30 seconds.
Tenth step, silicon substrate is removed and is cooled down outside chamber.
Above-mentioned often step CVD film-forming process, film-forming temperature are 200~400 DEG C, and silane flow rate is 1~200ml/min, into
Membrane cavity room pressure is 10~1000torr.
By above-mentioned processing step, amorphous silicon membrane is divided into repeatedly deposit and is formed by the present invention, and substep forms a film, fully release
Hydrogen atom in SiH keys, so as to prevent the protuberance of air bubble-shaped and coming off for film.
It these are only the preferred embodiment of the present invention, be not intended to limit the present invention.Come for those skilled in the art
Say, the invention may be variously modified and varied.Within the spirit and principles of the invention, it is any modification for being made, equivalent
Replace, improve etc., it should all be included in the protection scope of the present invention.
Claims (6)
- A kind of 1. amorphous silicon membrane film build method, it is characterised in that：Include following processing step：The first step, the silicon substrate that will be covered with silicon dioxide layer carry out the pre-heat treatment；Second step, using plasma processing silicon substrate；3rd step, to carrying out ventilation preheating in film forming chamber room；4th step, first time non-crystalline silicon film forming is carried out in film forming chamber room to silicon substrate；5th step, is passed through argon gas in chamber；6th step, carries out second of non-crystalline silicon film forming in film forming chamber room；7th step, is passed through argon gas in chamber；8th step, carries out third time non-crystalline silicon film forming；9th step, is passed through argon gas in chamber；Tenth step, silicon substrate is removed and is cooled down outside chamber.
- 2. amorphous silicon membrane film build method as claimed in claim 1, it is characterised in that：4th step, the 6th step, the 8th step Non-crystalline silicon film forming after, by silicon substrate in film forming chamber room hold mode 10~30 seconds.
- 3. amorphous silicon membrane film build method as claimed in claim 1, it is characterised in that：The film forming chamber is CVD film forming chambers Room, film-forming temperature are 200~400 DEG C, and silane flow rate is 1~200ml/min, and film forming chamber pressure is 10~1000torr.
- 4. amorphous silicon membrane film build method as claimed in claim 1, it is characterised in that：4th step to the 8th step, be for Circulating repetition, according to the thickness requirement specifically deposited and actual conditions, can select less or more cycle-indexes, with up to To the non-crystalline silicon thickness requirement of this batch whole wafer.
- 5. amorphous silicon membrane film build method as claimed in claim 4, it is characterised in that：The substep number of film forming is more, film Quality is better, but in view of process time cost, it is necessary to obtain balance between specific cycle-index and technique duration.
- 6. amorphous silicon membrane film build method as claimed in claim 1, it is characterised in that：The total thickness of the final non-crystalline silicon film forming Spend and be
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711163435.8A CN107919272A (en) | 2017-11-21 | 2017-11-21 | Amorphous silicon membrane film build method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711163435.8A CN107919272A (en) | 2017-11-21 | 2017-11-21 | Amorphous silicon membrane film build method |
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| Publication Number | Publication Date |
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| CN107919272A true CN107919272A (en) | 2018-04-17 |
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| CN201711163435.8A Pending CN107919272A (en) | 2017-11-21 | 2017-11-21 | Amorphous silicon membrane film build method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166795A (en) * | 2018-08-20 | 2019-01-08 | 上海华虹宏力半导体制造有限公司 | TiN electrode film forming method |
| CN110970287A (en) * | 2018-09-28 | 2020-04-07 | 长鑫存储技术有限公司 | Method for preparing amorphous silicon thin film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0630989A2 (en) * | 1993-06-21 | 1994-12-28 | Applied Materials, Inc. | Method of plasma chemical vapor deposition of layer with improved interface |
| CN104250258A (en) * | 2013-06-26 | 2014-12-31 | 气体产品与化学公司 | Aza-polysilane precursors and methods for depositing films comprising same |
-
2017
- 2017-11-21 CN CN201711163435.8A patent/CN107919272A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0630989A2 (en) * | 1993-06-21 | 1994-12-28 | Applied Materials, Inc. | Method of plasma chemical vapor deposition of layer with improved interface |
| CN104250258A (en) * | 2013-06-26 | 2014-12-31 | 气体产品与化学公司 | Aza-polysilane precursors and methods for depositing films comprising same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166795A (en) * | 2018-08-20 | 2019-01-08 | 上海华虹宏力半导体制造有限公司 | TiN electrode film forming method |
| CN110970287A (en) * | 2018-09-28 | 2020-04-07 | 长鑫存储技术有限公司 | Method for preparing amorphous silicon thin film |
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Application publication date: 20180417 |