Papers by Dr. SUSHANTA BORDOLOI
Renewable energy integration with electric vehicle technology: A review of the existing smart charging approaches
Renewable and Sustainable Energy Reviews
Intelligent packaging—sensors
Elsevier eBooks, 2024
Renewable and Sustainable Energy Reviews, 2023
The worsening energy crisis, growing environmental consciousness, and the detrimental consequence... more The worsening energy crisis, growing environmental consciousness, and the detrimental consequences of climate change, prompted governments to reduce carbon footprints. One of the approaches involved is adopting green energy technology to charge electric vehicles (EVs). The US Department of Energy estimates that EVs may effectively use 60% of the input energy while driving, twice as much as traditional fossil fuel-based vehicles. Although EVs are tremendously efficient, the amount of greenhouse gas emissions they can reduce relies on the source of electricity needed to power them. To summarize the role of RE as a viable charging alternative, in this study, we analyze four essential elements of EV charging infrastructure, RE-enabled smart charging approaches, utility interest and associated challenges and opportunities. First, the existing RE sources employed for EV charging are discussed with their global adoption, advantages and drawbacks and the leading countries. Second, we presented a thorough investigation of energy storage technologies, charging systems, related power electronics, and smart grid integration to facilitate the adoption of RE in EVs. Third, we discussed in-depth the many industry-implemented smart charging approaches with RE in light of the most recent global trend in EV energy usage. Finally, given the inherent challenges associated with realizing the sustainable transition, we discuss the technological challenges and opportunities related to grid integration, renovation, standardization, maintenance, network security and resource optimization. The authors believe this manuscript will serve as an information cornerstone for all the involved parties and scientific communication to gain a deeper understanding and contribute.
On-board Health Prognosis of Lithium-Ion Battery Based on the Estimation of Internal Resistance Under Resistive and Inductive Loading Conditions
2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT)
Investigation of Electric Field Profile and associated parameters with Embedded Metal Layer in Field Plate AlGaN/GaN HEMTs
Journal of physics, Mar 1, 2022
Electric field initiates various failure mechanism in an III-N based AlGaN/GaN HEMTs. The materia... more Electric field initiates various failure mechanism in an III-N based AlGaN/GaN HEMTs. The material properties of the GaN-HEMTs under the influence of electric field activates physical mechanisms like converse piezoelectric effect (CPE), crack/defect migration, trapping, which deteriorate the electrical behaviour of the device leading to permanent failure. The drain side of the gate edge has the highest electric field and is the hub of all the reliability concerns in a GaN HEMT, which is mitigated with field plate (FP) technology. However, the FP edge is now subjected to these degradation phenomena. The present work aims at suppressing the strong electric fields at the FP gate edge using an embedded metal layer that shields the electric field from reaching the gate edge. Calibrated numerical simulations have been carried out on the proposed device structure to observe the viability in consideration. It is found that the electric field at the FP edge reduces by around 3%. Also, CPE and electron temperature reduce by 20%, and 14%, respectively. Since the proposed device structure can considerably mitigate the electric field, CPE, and electron temperature, it is expected that it will pave a path for improved and reliable devices in the future.
Modelling and Analysis of an Electronic Differential-Based Traction Control System for Distributed Drive Electric Vehicle
Advances in sustainability science and technology, 2022
FEM Based Device Simulator for High Voltage Devices
Communications in Computer and Information Science, 2017
TCAD simulation of electronic device has always been the basic approach to understand solid state... more TCAD simulation of electronic device has always been the basic approach to understand solid state electronics and to frame road-map for the evolution of future technology. Design of devices on these materials require better understanding of the physical insights to the internals of the device structure. In such a scenario, TCAD tool can help to visualize internal dynamics of carriers and fields in the device structure, thus helping to improve them further. Device structures are evolving continuously leading to an increase in complexity of computation of simulation. There is an increasing challenge to these simulators to improvise compact device models, whereby generating precise results. The responsibility of TCAD designers is ever increasing to develop improved solvers featuring better predictive capabilities. In this work, an effort has been made to compare the performance of an FEM based proposed simulator with conventional available device simulator. A simple pn junction diode is designed in both the simulators and a comparison of different electrical properties has been done by incorporating similar models and exactly same material parameters.
Current Collapse Reduction Technique Using N-Doped Buffer Layer into the Bulk Region of a Gate Injection Transistor
2019 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems (VLSID), 2019
GaN based transistors are subjected to current collapse. In this work a unique solution to this i... more GaN based transistors are subjected to current collapse. In this work a unique solution to this issue is presented by using a buried n-type doped region in the bulk region below the 2DEG channel. The proposed structure is named as "Buried n-doped Gate Injection Transistor (BNGIT)". TCAD simulation of the structure shows that this added layer increases the electron density in the channel just above it. Hence the loss of electrons due to traps can be compensated which results in current collapse free operation.
Internet of Things Based Electronic Voting Machine
Intelligent Data Communication Technologies and Internet of Things, 2019
With the advancement in technology, the Internet has become an essential part of our lives. The c... more With the advancement in technology, the Internet has become an essential part of our lives. The concept of IoT has caught the attention of industry, society, and academy by enhancing our day to day activities. In this work, the Electronic Voting Machine (EVM) using IoT is presented. As the process of election demands to be fair and transparent, the fingerprint-based EVM can be one of the alternatives. The work focusses on the concept of an online electoral system for election, where the voting information is shared instantly, and mechanism had been put in place to detect a proxy vote. A hardware prototype is developed and to evaluate the performance of the proposed system, field trials were conducted.
Simulation framework for GaN devices with special mention to reliability concern
VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects, 2019
In this chapter, we will look into some of the reliability concern in first few sections and fi n... more In this chapter, we will look into some of the reliability concern in first few sections and fi nally propose a simulation (numerical) framework along with model development to understand these effects.
RSC Advances, 2021
Correction for ‘Realization of multi-configurable logic gate behaviour on fluorescence switching ... more Correction for ‘Realization of multi-configurable logic gate behaviour on fluorescence switching signalling of naphthalene diimide congeners’ by Hridoy Jyoti Bora et al., RSC Adv., 2021, 11, 35274–35279. DOI: 10.1039/d1ra06728a.
IEEE Access, 2021
Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving... more Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving material and processing technology. In this paper, a detailed analysis of gate-shaped AlGaN / GaN HEMT with field plate is presented. Although AlGaN / GaN HEMT with field-plate is well known, its blending with gate-shaping leading to a more robust and reliable behaviour is described in this paper. It is observed that the threshold voltage and transconductance invariably remain constant for various combinations of gate-shaped and field plate placements. The threshold voltage for all the devices are found to be-5.8 V. The peak transconductance for the devices without field plate and with field plate is ∼ 0.16 S/mm and ∼ 0.15 S/mm, respectively. Apart from leakage current, the electric field also gets mitigated for both gate-shaped and field-plated devices by ∼ 45% and ∼ 68%, respectively. The moderation in electric field further assists in the reduction of electron temperature for gate-shaped and field-plated structures by ∼ 12% and ∼ 85%, respectively. Additionally, breakdown voltage increases for the gate-shaped devices to 133 V as compared to 120 V of conventional devices without field plate. Significant reduction in leakage current, electric field, and electron temperature is accompanied by a minor increment in capacitance for the field-plated structure, hence, the proposed structure is expected to enhance reliability of the device. Thus, it is anticipated that the proposed devices with enhanced reliability would be a step ahead of conventional devices and would find major applications in high power domain. INDEX TERMS Capacitance voltage (CV), electron temperature, GaN HEMT, gate shape, leakage current.
Numerical analysis of the Impact of Gate Geometry variations on the Reliability of AlGaN/GaN HEMT
2021 IEEE 4th International Conference on Computing, Power and Communication Technologies (GUCON), 2021
Converse piezoelectric strain leads to degradations such as structural deformation, creation of t... more Converse piezoelectric strain leads to degradations such as structural deformation, creation of traps, etc. in AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, an approach to reduce the converse piezoelectric strain in the AlGaN barrier layer is presented by adopting a filleted gate (FG) geometry HEMT. It is observed that in FG HEMT, the peak vertical electric field, and vertical converse piezoelectric strain reduces by almost 25%, while electron temperature reduces by 20% in comparison to the traditionally used rectangular gate HEMT. It is also observed that the reduction in peak vertical electric field, and peak vertical converse piezoelectric strain is more than staircase gate geometry device. Thus, the proposed FG HEMT is expected to be a potential candidate which can tackle converse piezoelectric strain induced damages in AlGaN/GaN HEMT devices.
RSC Advances, 2021
The implementation of functional congeners of naphthalene diimide experiencing fluorescence ON/OF... more The implementation of functional congeners of naphthalene diimide experiencing fluorescence ON/OFF switching signalling in response to external stimuli, is suitably realized to construct multi-configurable molecular logic gates.
Journal of Electronic Materials, 2020
Reliability has been one of the major concerns for AlGaN/GaN high-electronmobility transistors (H... more Reliability has been one of the major concerns for AlGaN/GaN high-electronmobility transistors (HEMTs) over the past decades owing to their high-power operation. Although significant progress has been made in recent years, to position AlGaN/GaN HEMT technology as a disruptive technology, better understanding of reliability phenomena and their enhancement is necessary. Greater strength of physical phenomena such as converse piezoelectric strain, electric field, electron temperature, and Joule heating accelerates the degradation and reduces the lifespan of such devices. A detailed numerical study has been carried out to observe the impact of gate filleting on the performance of a AlGaN/GaN HEMT. It is observed that the converse piezoelectric strain in the AlGaN barrier layer, as well as the electron and lattice temperatures are suppressed due to the filleting of the gate geometry. To understand this more deeply, a comparison is drawn between field-plate rectangular-gate HEMTs and filleted-gate HEMTs with and without a field plate. For the filleted-gate HEMTs with and without a field plate, the electric field and converse piezoelectric strain are lower by 38% and 30%, respectively, as compared with the rectangular-gate HEMT with a field plate. As the filleting radius is increased, the gate leakage current and lattice temperature at the gate/AlGaN interface are reduced and the OFF-state reliability is enhanced, together with a reduction in the converse piezoelectric strain and electron temperature. Based on the presented analysis, a filleted-gate HEMT is proposed as a potential candidate to mitigate damage induced by converse piezoelectric strain, electron temperature, and Joule heating in future AlGaN/GaN-based high-power devices.
A study on modeling and simulation of Multiple- Gate MOSFETs
Journal of Physics: Conference Series, 2016
Endless scaling of planar MOSFET over the past four decades has delivered proliferating transisto... more Endless scaling of planar MOSFET over the past four decades has delivered proliferating transistor density and performance to integrated circuits (ICs) at the cost of increase in short channel effects (SCEs). As a result of narrow channel lengths in deeply scaled MOSFETs, off-state leakage current happens to increase the power requirement of device by forcing drain potential to lose its leverage over the electrostatics of channel. Multigate devices (Double Gate FET, FinFET) promise better immunity to SCEs by concealing the issues caused by scaling of planar technology, and also exhibits better scalability with increased level of integration. In this paper, a study on modeling and simulation of multiple-gate MOSFETs is presented. This paper describes the development in semiconductor technology from planar to non-planar devices, benefits of multigate MOSFETs over previous technologies. Effects of varying different parameters (such as Fin thickness, Fin height, use of different gate material etc.) in multigate (specially FinFET) devices is also described. Improvement in device physics models along with technology, and importance of computational physics for efficient modeling of nanoscale devices is presented.
Estimation of coulombic efficiency of lead acid battery for range determination of electric vehicle
2015 1st Conference on Power, Dielectric and Energy Management at NERIST (ICPDEN), 2015
The coulomb counting method gives vital information for determination of state-of-charge (SOC) of... more The coulomb counting method gives vital information for determination of state-of-charge (SOC) of battery, which in turn is a useful method for range determination of an electric vehicle. By investigating the charging and discharging characteristics for a number of cycles of operation, coulombic efficiency of the battery is determined. The variation observed in coulombic efficiency with respect to the number of cycle was empirically modeled with the help of polynomial as well as exponential curve fitting method in Matlab. Models thus developed was again validated for the later cycles of operation. The empirical model derived with the polynomial curve fitting was found to be the best suited for the requirement of the range detection system of an electric vehicle. A hardware related to this work is also developed.
Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate
IEEE Transactions on Device and Materials Reliability, 2022
Electric field in a device varies as it switches between ON and OFF states. These states have dif... more Electric field in a device varies as it switches between ON and OFF states. These states have different intensities of electric field and carrier density. The regions having high electric field affects reliability of a GaN-HEMT. In a AlGaN/GaN HEMT, degradation primarily initiates as a result of electric field crowding near its edges. The present work aims at suppressing high electric field in the SEMI-ON state at the field plate edge by incorporating a SiO2 pocket at its edge. Numerical analysis is performed using a calibrated setup to investigate viability and performance of the proposed device. It is found that the electric field and electron temperature in the SEMI-ON state reduce significantly by incorporating a SiO2 pocket around the field plate edge in the drain access region. For the device having SiO2 pocket with diamond and passivation layer thickness kept at 30 nm each, the electric field, carrier temperature, and self heating reduces by 43%, 20%, and 13%, respectively at the field plate edge along with 47% reduction in the thermal resistance.
The coulomb counting method gives vital information for determination of state-of-charge (SOC) of... more The coulomb counting method gives vital information for determination of state-of-charge (SOC) of battery, which in turn is a useful method for range determination of an electric vehicle. By investigating the charging and discharging characteristics for a number of cycles of operation, coulombic efficiency of the battery is determined. The variation observed in coulombic efficiency with respect to the number of cycle was empirically modeled with the help of polynomial as well as exponential curve fitting method in Matlab. Models thus developed was again validated for the later cycles of operation. The empirical model derived with the polynomial curve fitting was found to be the best suited for the requirement of the range detection system of an electric vehicle. A hardware related to this work is also developed.
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Papers by Dr. SUSHANTA BORDOLOI