Papers by alvaro gonzalo pacheco mora
El GATT y los países en vías de desarrollo
Relaciones Internacionales, 2016
El presente articulo presenta un analisis sobre el papel de GATT en los paises en vias de desarro... more El presente articulo presenta un analisis sobre el papel de GATT en los paises en vias de desarrollo.
Ingeniería e Investigación, 1982
Con alguna frecuencia llegan al IEI consultas acerca de la posibilidad de que se presente este pr... more Con alguna frecuencia llegan al IEI consultas acerca de la posibilidad de que se presente este problema en ciertas instalaciones industriales. El siguiente es un estudio sobre dicho fenómeno.
La responsabilidad del estado por error judicial frente a la acción de tutela como mecanismo para denunciarlo
Universidad Colegio Mayor Nuestra Senora Del Rosario Universidad Del Rosario Edocur Repositorio Institucional Disponible En Http Repository Urosario Edu Co, 2000
La carta politica de 1991 consagro una clausula general de responsabilidad institucional del Esta... more La carta politica de 1991 consagro una clausula general de responsabilidad institucional del Estado segun la cual este respondera patrimonialmente por los danos antijuridicos que le sean imputables, causados por la accion o la omision
El plan de desarrollo comunal como una oportunidad para la participación ciudadana: creación de Observatorio de Desarrollo Local para la comuna de San Bernardo, Chile
Revista De Estudios Politicos Y Estrategicos, 2014
El concepto de cultura dentro de los modelos de desarrollo durante el siglo XX Durante el siglo X... more El concepto de cultura dentro de los modelos de desarrollo durante el siglo XX Durante el siglo XX, los diferentes modelos de desarrollo que se implementaron en la región latinoamericana no contemplaron la incorporación del patrimonio cultural y natural como base del potencial desarrollo de nuestras sociedades.
Aplicación del Programa Integral de Psicoestimulación Cognitivo Conductal (PIPCC) a enfermos de Alzheimer: seguimiento de un año
Envejecimiento Y Demencia Un Enfoque Multidisciplinar 2011 Isbn 978 84 9915 452 7 Pags 487 492, 2011
GaP 1−x N x thin films were deposited on Silicon (100) substrates, in the range of 420-520 o C by... more GaP 1−x N x thin films were deposited on Silicon (100) substrates, in the range of 420-520 o C by r-f magnetron sputtering in a nitrogen-argon atmosphere. According to X-ray measurements the GaPN films are polycrystalline with preferential orientation along of (111) direction. High resolution scanning electron microscopy (HRSEM) images taken in cross sectional show a columnar growth. Raman spectra show TO and LO vibrational phonon modes at 370 and 408 cm −1 associated to GaP, and a local phonon mode around 390 cm −1 , likely related with N-induced disorder or N-cluster formation in GaP host.
Materials Science in Semiconductor Processing, 2015
Multi-junction solar cells (SC) made from III-V compound semiconductors are still in the developm... more Multi-junction solar cells (SC) made from III-V compound semiconductors are still in the development phase. Here, we perform calculations for multi-junction cells: Al x Ga 1 À x As top junction, GaAs middle junction and In y Ga 1 À y As bottom junction (all of these materials with band-gaps between 2.1 and 0.8 eV) in order to obtain the optimal band gap and thickness for each junction under the AM1.5 solar radiation spectrum. The ideal photocurrent density is around 15.5 mA/cm 2. In order to reduce the natural reflectivity, an antireflective coating (ARC) was chosen, based on a MgF 2 /ZnS double layer, allowing for a significant increase of the current density with respect to a cell without it. Calculations of external quantum efficiency (QE) were also performed for the three cases mentioned above: ideal one, taking into account the total reflection and with the ARC double layer. Finally, when more realistic calculations are done, taking into account the carrier recombination at each sub-cell, and the light reflection for a tandem cell with the designed ARC on top, the expected conversion efficiency (η), under the AM 1.5 spectrum (without concentration), was determined to be around 38.5%, making this an attractive III-V compound tandem cell to be investigated in the near future.
Microscopy Research, 2015
GaAs/In bilayers were prepared by RF Magnetron Sputtering in an Ar atmosphere on Si (100) substra... more GaAs/In bilayers were prepared by RF Magnetron Sputtering in an Ar atmosphere on Si (100) substrates using high purity (95.95%) GaAs (100) and In targets. The growth temperatures were 300˚C and 580˚C for the high purity targets of In and GaAs, respectively. Three samples were prepared: the deposition time (t d) for the GaAs layers was fixed to 30 minutes, while varied for the In layers from t d = 10, 15, and 20 minutes. The morphological and optical studies of the samples were made by means of Amplitude Modulation Atomic Force Microscopy (AM-AFM). In order to analyze and correlate surface morphology and alloy composition properties, the as-prepared samples were cleaved along the [001] direction and subsequently studied by AM-AFM-micrographs. From topographic images, a statistical study of the roughness and grain size was made. Additionally, cross sectional AM-AFM-micrographs were performed for each sample, where the phase channel, which is sensitive to the material properties of the specimen, was of particular interest.
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Papers by alvaro gonzalo pacheco mora