Marco Salluzzo

Three-phase competition in underdoped YBa2Cu3O6

by Giacomo Ghiringhelli, Marco Salluzzo, and Alex Frañó

$Research paper thumbnail of Evidence for Dynamic Phase Separation and High Energy Spin Dynamics in underdoped La $ _ {2-x} $ Sr $ _x $ CuO $ _4 $ from Resonant Inelastic X-Ray Scattering$

Evidence for Dynamic Phase Separation and High Energy Spin Dynamics in underdoped La $ _ {2-x} $ Sr $ _x $ CuO $ _4 $ from Resonant Inelastic X-Ray Scattering

by Giacomo Ghiringhelli and Marco Salluzzo

We probe the collective magnetic modes of La2CuO4 (LCO) and underdoped La2−xSrxCuO4 (LSCO) by mom... more We probe the collective magnetic modes of La2CuO4 (LCO) and underdoped La2−xSrxCuO4 (LSCO) by momentum resolved Resonant Inelastic X-ray Scattering (RIXS) at the Cu L3 edge. In LCO the single magnon dispersion measured by RIXS coincides with the one determined by inelastic neutron scattering. For LSCO the spin dynamics shows a branch dispersing up to ∼400 meV coexisting with a branch at lower energy. Only the latter has been observed with neutrons so far and is considered a key signature of doped cuprates. The presence of the high-energy branch indicates that LSCO is in a dynamic inhomogeneous spin state.

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Electric-Field Control of the Orbital Occupancy and Magnetic Moment of a Transition-Metal Oxide

Physical Review Letters, 2015

By using soft-x-ray linear and magnetic dichroism on La_{0.825}Sr_{0.175}MnO_{3}/PbZr_{0.2}Ti_{0.... more By using soft-x-ray linear and magnetic dichroism on La_{0.825}Sr_{0.175}MnO_{3}/PbZr_{0.2}Ti_{0.8}O_{3} ferromagnetic-ferroelectric heterostructures we demonstrate a nonvolatile modulation of the Mn 3d orbital anisotropy and magnetic moment. X-ray absorption spectroscopy at the Mn L_{2,3} edges shows that the ferroelectric polarization direction modifies the carrier density, the spin moment, and the orbital splitting of t_{2g} and e_{g} Mn 3d states. These results are consistent with polar distortions of the oxygen octahedra surrounding the Mn ions induced by the switching of the ferroelectric polarization.

Electric-Field Control of the Orbital Occupancy and Magnetic Moment of a Transition-Metal Oxide

Physical Review Letters, 2015

By using soft-x-ray linear and magnetic dichroism on La_{0.825}Sr_{0.175}MnO_{3}/PbZr_{0.2}Ti_{0.... more By using soft-x-ray linear and magnetic dichroism on La_{0.825}Sr_{0.175}MnO_{3}/PbZr_{0.2}Ti_{0.8}O_{3} ferromagnetic-ferroelectric heterostructures we demonstrate a nonvolatile modulation of the Mn 3d orbital anisotropy and magnetic moment. X-ray absorption spectroscopy at the Mn L_{2,3} edges shows that the ferroelectric polarization direction modifies the carrier density, the spin moment, and the orbital splitting of t_{2g} and e_{g} Mn 3d states. These results are consistent with polar distortions of the oxygen octahedra surrounding the Mn ions induced by the switching of the ferroelectric polarization.

Electric-Field Control of the Orbital Occupancy and Magnetic Moment of a Transition-Metal Oxide

Physical Review Letters, 2015

By using soft-x-ray linear and magnetic dichroism on La_{0.825}Sr_{0.175}MnO_{3}/PbZr_{0.2}Ti_{0.... more By using soft-x-ray linear and magnetic dichroism on La_{0.825}Sr_{0.175}MnO_{3}/PbZr_{0.2}Ti_{0.8}O_{3} ferromagnetic-ferroelectric heterostructures we demonstrate a nonvolatile modulation of the Mn 3d orbital anisotropy and magnetic moment. X-ray absorption spectroscopy at the Mn L_{2,3} edges shows that the ferroelectric polarization direction modifies the carrier density, the spin moment, and the orbital splitting of t_{2g} and e_{g} Mn 3d states. These results are consistent with polar distortions of the oxygen octahedra surrounding the Mn ions induced by the switching of the ferroelectric polarization.

Single and double side YBCO thin films for X-band microwave filters and devices

by Antonello Andreone and Marco Salluzzo

International Journal of …, 1999

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Seebeck Effect in Thin Films and Superlattices of Cuprate Superconductors

International Journal of Modern Physics B, 2003

In this paper we present thermopower measurements on Nd1 + xBa2 - xCu3O7 - delta thin films and (... more In this paper we present thermopower measurements on Nd1 + xBa2 - xCu3O7 - delta thin films and (BaCuO2)2/(CaCuO2)n superconducting superlattices. We estimate for these systems how much charge is transferred to the CuO2 planes. For the superlattices we have clear evidence that the charge transferred by the Charge Reservoir block distributes uniformly on the available CuO2 planes. The temperature dependence of the thermopower is then compared with the prediction of a model which considers the electron-phonon-impurity interference.

Seebeck Effect in Thin Films and Superlattices of Cuprate Superconductors

International Journal of Modern Physics B, 2003

In this paper we present thermopower measurements on Nd1 + xBa2 - xCu3O7 - delta thin films and (... more In this paper we present thermopower measurements on Nd1 + xBa2 - xCu3O7 - delta thin films and (BaCuO2)2/(CaCuO2)n superconducting superlattices. We estimate for these systems how much charge is transferred to the CuO2 planes. For the superlattices we have clear evidence that the charge transferred by the Charge Reservoir block distributes uniformly on the available CuO2 planes. The temperature dependence of the thermopower is then compared with the prediction of a model which considers the electron-phonon-impurity interference.

Seebeck Effect in Thin Films and Superlattices of Cuprate Superconductors

International Journal of Modern Physics B, 2003

In this paper we present thermopower measurements on Nd1 + xBa2 - xCu3O7 - delta thin films and (... more In this paper we present thermopower measurements on Nd1 + xBa2 - xCu3O7 - delta thin films and (BaCuO2)2/(CaCuO2)n superconducting superlattices. We estimate for these systems how much charge is transferred to the CuO2 planes. For the superlattices we have clear evidence that the charge transferred by the Charge Reservoir block distributes uniformly on the available CuO2 planes. The temperature dependence of the thermopower is then compared with the prediction of a model which considers the electron-phonon-impurity interference.

Transport Property and Charge Trap Comparison for N-Channel Perylene Diimide Transistors with Different Air-Stability †

The Journal of Physical Chemistry C, 2010

N-type organic field-effect transistors (OFETs), based on two perylene diimide semiconductors (PD... more N-type organic field-effect transistors (OFETs), based on two perylene diimide semiconductors (PDI-8 and PDI-8CN 2 ) exhibiting very different air sensitivities, have been fabricated on Si/SiO 2 substrates. These OFETs have been electrically characterized in vacuum both in the dark and under white-light illumination by dc transfer and output curves, bias stress experiments and variable temperature measurements. In particular, the combination of variable temperature and light illumination experiments is shown to be a powerful tool to clarify the influence of charge trapping on the device operation. Even if, in vacuum, the air-sensitive PDI-8 devices display slightly better performances in terms of field-effect mobility and maximum current values, according to our results, charge transport in PDI-8 films is much more affected by charge trap states compared to PDI8-CN 2 devices. These trapping centers are mainly active above 180 K, and their physical nature can be basically ascribed to the interaction between silanol groups and water molecules absorbed on SiO 2 surface that is more active above the H 2 O supercooled transition temperature.

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Transport Property and Charge Trap Comparison for N-Channel Perylene Diimide Transistors with Different Air-Stability †

The Journal of Physical Chemistry C, 2010

N-type organic field-effect transistors (OFETs), based on two perylene diimide semiconductors (PD... more N-type organic field-effect transistors (OFETs), based on two perylene diimide semiconductors (PDI-8 and PDI-8CN 2 ) exhibiting very different air sensitivities, have been fabricated on Si/SiO 2 substrates. These OFETs have been electrically characterized in vacuum both in the dark and under white-light illumination by dc transfer and output curves, bias stress experiments and variable temperature measurements. In particular, the combination of variable temperature and light illumination experiments is shown to be a powerful tool to clarify the influence of charge trapping on the device operation. Even if, in vacuum, the air-sensitive PDI-8 devices display slightly better performances in terms of field-effect mobility and maximum current values, according to our results, charge transport in PDI-8 films is much more affected by charge trap states compared to PDI8-CN 2 devices. These trapping centers are mainly active above 180 K, and their physical nature can be basically ascribed to the interaction between silanol groups and water molecules absorbed on SiO 2 surface that is more active above the H 2 O supercooled transition temperature.

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Transport Property and Charge Trap Comparison for N-Channel Perylene Diimide Transistors with Different Air-Stability †

The Journal of Physical Chemistry C, 2010

N-type organic field-effect transistors (OFETs), based on two perylene diimide semiconductors (PD... more N-type organic field-effect transistors (OFETs), based on two perylene diimide semiconductors (PDI-8 and PDI-8CN 2 ) exhibiting very different air sensitivities, have been fabricated on Si/SiO 2 substrates. These OFETs have been electrically characterized in vacuum both in the dark and under white-light illumination by dc transfer and output curves, bias stress experiments and variable temperature measurements. In particular, the combination of variable temperature and light illumination experiments is shown to be a powerful tool to clarify the influence of charge trapping on the device operation. Even if, in vacuum, the air-sensitive PDI-8 devices display slightly better performances in terms of field-effect mobility and maximum current values, according to our results, charge transport in PDI-8 films is much more affected by charge trap states compared to PDI8-CN 2 devices. These trapping centers are mainly active above 180 K, and their physical nature can be basically ascribed to the interaction between silanol groups and water molecules absorbed on SiO 2 surface that is more active above the H 2 O supercooled transition temperature.

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Electronic Reconstruction at the Interface Between Band Insulating Oxides: The LaAlO3/SrTiO3 System

Oxide Thin Films, Multilayers, and Nanocomposites, 2015

The conducting quasi-two dimensional electron system (q2DES) formed at the interface between LaAl... more The conducting quasi-two dimensional electron system (q2DES) formed at the interface between LaAlO 3 and SrTiO 3 band insulators is confronting the condensed matter physics community with new paradigms. While the mechanism for the formation of the q2DES is debated, new conducting interfaces have been discovered paving the way to possible applications in electronics, spintronics and optoelectronics. This chapter is an overview of the research on the LAO/STO system, presenting some of the most important results obtained in the last decade to clarify the mechanism of formation of the q2DES at the oxide interfaces and its peculiar electronic properties as compared to semiconducting 2D-electron gas.

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Electronic Reconstruction at the Interface Between Band Insulating Oxides: The LaAlO3/SrTiO3 System

Oxide Thin Films, Multilayers, and Nanocomposites, 2015

The conducting quasi-two dimensional electron system (q2DES) formed at the interface between LaAl... more The conducting quasi-two dimensional electron system (q2DES) formed at the interface between LaAlO 3 and SrTiO 3 band insulators is confronting the condensed matter physics community with new paradigms. While the mechanism for the formation of the q2DES is debated, new conducting interfaces have been discovered paving the way to possible applications in electronics, spintronics and optoelectronics. This chapter is an overview of the research on the LAO/STO system, presenting some of the most important results obtained in the last decade to clarify the mechanism of formation of the q2DES at the oxide interfaces and its peculiar electronic properties as compared to semiconducting 2D-electron gas.

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Electronic Reconstruction at the Interface Between Band Insulating Oxides: The LaAlO3/SrTiO3 System

Oxide Thin Films, Multilayers, and Nanocomposites, 2015

The conducting quasi-two dimensional electron system (q2DES) formed at the interface between LaAl... more The conducting quasi-two dimensional electron system (q2DES) formed at the interface between LaAlO 3 and SrTiO 3 band insulators is confronting the condensed matter physics community with new paradigms. While the mechanism for the formation of the q2DES is debated, new conducting interfaces have been discovered paving the way to possible applications in electronics, spintronics and optoelectronics. This chapter is an overview of the research on the LAO/STO system, presenting some of the most important results obtained in the last decade to clarify the mechanism of formation of the q2DES at the oxide interfaces and its peculiar electronic properties as compared to semiconducting 2D-electron gas.

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Ubiquitous long-range antiferromagnetic coupling across the interface between superconducting and ferromagnetic oxides

by Vittorio Cataudella, C. Perroni, and Marco Salluzzo

Nature communications, 2014

The so-called proximity effect is the manifestation, across an interface, of the systematic compe... more The so-called proximity effect is the manifestation, across an interface, of the systematic competition between magnetic order and superconductivity. This phenomenon has been well documented and understood for conventional superconductors coupled with metallic ferromagnets; however it is still less known for oxide materials, where much higher critical temperatures are offered by copper oxide-based superconductors. Here we show that, even in the absence of direct Cu-O-Mn covalent bonding, the interfacial CuO2 planes of superconducting La(1.85)Sr(0.15)CuO(4) thin films develop weak ferromagnetism associated to the charge transfer of spin-polarised electrons from the La(0.66)Sr(0.33)MnO(3) ferromagnet. Theoretical modelling confirms that this effect is general to all cuprate/manganite heterostructures and the presence of direct bonding only affects the strength of the coupling. The Dzyaloshinskii-Moriya interaction, also at the origin of the weak ferromagnetism of bulk cuprates, propag...

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Properties of YNi2B2C superconducting thin films

by Antonello Andreone and Marco Salluzzo

Physical Review B, 1997

High-quality, c-axis-oriented thin films of the intermetallic superconductor YNi2B2C were obtaine... more High-quality, c-axis-oriented thin films of the intermetallic superconductor YNi2B2C were obtained in situ by magnetron sputtering on MgO and other substrates held at about T 800 C. The best films showed a maximum of Tc 15.1 K with Tc 0.1 K. We report on structural and electrical film characterization including dc resistivity measurements up to 450 K as well as critical-field and critical-current measurements. Scanning tunnel microscope tunneling measurements were also performed, giving further evidence of the overall BCS nature of ...

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