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WCDMA standards. order of 0.22%, and in line with what would be required for channel selection in lithographic techniques. The achieved 3dB bandwidths are impressively small, in the

Figure 16 WCDMA standards. order of 0.22%, and in line with what would be required for channel selection in lithographic techniques. The achieved 3dB bandwidths are impressively small, in the

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of the Mason’s model as shown in Figure 2 [16]. The equivalent circuit representation for a piezoelectric transducer is a simplified version
of the Mason’s model as shown in Figure 2 [16]. The equivalent circuit representation for a piezoelectric transducer is a simplified version
Table I: Mapping between mechanical and electrical variable used to derive the equivalent electrical circuit of Figure 2. The arrow emphasizes the fact that it is a mapping process and proportionality factors are not explicitly indicated. Table I: Mapping between mechanical and electrical variable used to derive the A one port resonator is a device for which the simplified model of Figure 2 is terminated
Table I: Mapping between mechanical and electrical variable used to derive the equivalent electrical circuit of Figure 2. The arrow emphasizes the fact that it is a mapping process and proportionality factors are not explicitly indicated. Table I: Mapping between mechanical and electrical variable used to derive the A one port resonator is a device for which the simplified model of Figure 2 is terminated
are neglected, only on the electroded area. with the motional components of the resonator and its value depends, if fringing fields
are neglected, only on the electroded area. with the motional components of the resonator and its value depends, if fringing fields
Figure 4: Schematic representation of the excitation scheme used to induce higher order contour modes in rectangular plates. (a) TFE is characterized by opposing electrodes, whereas (b) LFE makes use of coplanar electrodes. In the LFE implementation a floating metal plane was included to improve the deposition of AIN films and offer better confinement of the electric field within the entire thickness of the AIN resonator. (c) COMSOL simulation shows a three dimensional example of the mode of vibration of higher order contour-mode resonators for which five parallel electrodes were considered.
Figure 4: Schematic representation of the excitation scheme used to induce higher order contour modes in rectangular plates. (a) TFE is characterized by opposing electrodes, whereas (b) LFE makes use of coplanar electrodes. In the LFE implementation a floating metal plane was included to improve the deposition of AIN films and offer better confinement of the electric field within the entire thickness of the AIN resonator. (c) COMSOL simulation shows a three dimensional example of the mode of vibration of higher order contour-mode resonators for which five parallel electrodes were considered.
efficiency, a smaller equivalent Cy and a larger motional resistance than the TFE device.
efficiency, a smaller equivalent Cy and a larger motional resistance than the TFE device.
contour-mode devices. Figure 6: Schematic representation of different implementation of two port contour-mode resonators. (a) Laterally adjacent electrodes constitute the two ports in a fundamental mode resonator. In (b) a stacked configuration is presented. In (c) the two ports are defined in a higher order contour-mode resonator by separating the electrodes along a direction parallel to the acoustic wave in the device. Only the top electrodes are visible in this representation. Bottom electrodes are symmetrically placed at the bottom of the structure to effectively excite higher order contour modes of vibration using a TFE scheme.
contour-mode devices. Figure 6: Schematic representation of different implementation of two port contour-mode resonators. (a) Laterally adjacent electrodes constitute the two ports in a fundamental mode resonator. In (b) a stacked configuration is presented. In (c) the two ports are defined in a higher order contour-mode resonator by separating the electrodes along a direction parallel to the acoustic wave in the device. Only the top electrodes are visible in this representation. Bottom electrodes are symmetrically placed at the bottom of the structure to effectively excite higher order contour modes of vibration using a TFE scheme.
Figure 7: 3D and 2D COMSOL simulations of the mode of vibration of a two port higher order contour-mode resonator. where L, W, and 7 are the overall dimensions of the structure as shown in Figure 7. The need for a common ground or a completely separated set of input and output
Figure 7: 3D and 2D COMSOL simulations of the mode of vibration of a two port higher order contour-mode resonator. where L, W, and 7 are the overall dimensions of the structure as shown in Figure 7. The need for a common ground or a completely separated set of input and output
Coupling capacitors are provided by intrinsic capacitance of the resonator off-chip components, as coupling elements for the realization of narrow-band filters [21].
Coupling capacitors are provided by intrinsic capacitance of the resonator off-chip components, as coupling elements for the realization of narrow-band filters [21].
Figure 9: Schematic representation of the fabrication process employed for the making of contour-mode AIN resonators. (a) Low stress nitride (LSN) deposition by LPCVD, followed by Pt patterning by lift-off and AIN sputter deposition; (b) Open via access to bottom Pt electrode through AIN. AIN is wet etched by 160 °C H3POx; (c) Deposition of top Pt electrode and patterning by lift-off; (d) Cl.-based dry etching of AIN resonant device and dry release in XeF).
Figure 9: Schematic representation of the fabrication process employed for the making of contour-mode AIN resonators. (a) Low stress nitride (LSN) deposition by LPCVD, followed by Pt patterning by lift-off and AIN sputter deposition; (b) Open via access to bottom Pt electrode through AIN. AIN is wet etched by 160 °C H3POx; (c) Deposition of top Pt electrode and patterning by lift-off; (d) Cl.-based dry etching of AIN resonant device and dry release in XeF).
Figure 12: Admittance plots (wide and zoomed in scan) of an 803 MHz higher order contour-mode AIN rsonator. resonator. This specific device was fabricated on a regular resistivity silicon substrate. The Q value is derived from a direct measurement of the 3 dB bandwidth of the
Figure 12: Admittance plots (wide and zoomed in scan) of an 803 MHz higher order contour-mode AIN rsonator. resonator. This specific device was fabricated on a regular resistivity silicon substrate. The Q value is derived from a direct measurement of the 3 dB bandwidth of the
Figure 13: Experimental response of 216.5 MHz LFE higher order contour-mode resonator exhibiting a QO of 1850, Ry of 470 Q and k/ of 0.79 %. 300 nm and the Si has a resistivity larger than 60 kQ-cm).
Figure 13: Experimental response of 216.5 MHz LFE higher order contour-mode resonator exhibiting a QO of 1850, Ry of 470 Q and k/ of 0.79 %. 300 nm and the Si has a resistivity larger than 60 kQ-cm).
Figure 14: Expanded equivalent model for the one port contour-mode device. The model includes the substrate parasitic components caused by pad and device layout (Rz, Rx, C1 Cy) as well as an additional loss term, Rs, that models the electrical resistance in the electrodes on the device. The plot on the left shows how the substrate model fits very well the measured data for the substrate.
Figure 14: Expanded equivalent model for the one port contour-mode device. The model includes the substrate parasitic components caused by pad and device layout (Rz, Rx, C1 Cy) as well as an additional loss term, Rs, that models the electrical resistance in the electrodes on the device. The plot on the left shows how the substrate model fits very well the measured data for the substrate.
mitigate the effect of the substrate on the device response.
mitigate the effect of the substrate on the device response.
devices were employed to successfully demonstrate narrow band filters. comparable to one port devices were reported. Despite the low Q factor, these two port
devices were employed to successfully demonstrate narrow band filters. comparable to one port devices were reported. Despite the low Q factor, these two port
Table III: Comparison of key parameters between one and two port AIN contour-mode resonators presented in this work and [6, 19, 20] An important comparison between the two different designs can be made in relation to
Table III: Comparison of key parameters between one and two port AIN contour-mode resonators presented in this work and [6, 19, 20] An important comparison between the two different designs can be made in relation to
reported. These devices will enable new methods of frequency synthesis in spread
reported. These devices will enable new methods of frequency synthesis in spread
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