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Appendix C. Summary of SiN, Atomic Layer Deposition Parameters and Post Processing Treatments.

Table 13 Appendix C. Summary of SiN, Atomic Layer Deposition Parameters and Post Processing Treatments.

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In terms of chemical composition one of the two major classes of polysilazanes, organopolysilazanes (structure 1), has organic car- bon substitutions on the backbone leading in general to silicon carbonitrides. Inorganic polysilazanes, alternately termed perhydri- dopolysilazanes (structure 2), lead more directly to silicon nitride structures, but the polymers themselves are apt to have stability issues that lead to variability in performance.
In terms of chemical composition one of the two major classes of polysilazanes, organopolysilazanes (structure 1), has organic car- bon substitutions on the backbone leading in general to silicon carbonitrides. Inorganic polysilazanes, alternately termed perhydri- dopolysilazanes (structure 2), lead more directly to silicon nitride structures, but the polymers themselves are apt to have stability issues that lead to variability in performance.
Table I. Overview of Properties of Bulk and Thin Film SiN,*.
Table I. Overview of Properties of Bulk and Thin Film SiN,*.
* All values at R.T. unless otherwise indicated.
* All values at R.T. unless otherwise indicated.
Table II. Summary of Recent CVD, PECVD, and Sputtering SiNx Work.
Table II. Summary of Recent CVD, PECVD, and Sputtering SiNx Work.
Table III. Summary of Recent ALD SiNx Work.
Table III. Summary of Recent ALD SiNx Work.
*The table is intended to provide baseline comparisons of bond dis: sociation energies of selected organic and inorganic Si and N sourcé chemistries with the most commonly used precursors.!0%!93 Table IV. Si- and N- Bond Dissociation Energies for Selected SiNx Source Chemistries*.
*The table is intended to provide baseline comparisons of bond dis: sociation energies of selected organic and inorganic Si and N sourcé chemistries with the most commonly used precursors.!0%!93 Table IV. Si- and N- Bond Dissociation Energies for Selected SiNx Source Chemistries*.
Data in this table from sources cited in text or experimentally determined by the authors. Table V. Relevant Properties of Recently Studied CVD and ALD SiNx Source Precursors.
Data in this table from sources cited in text or experimentally determined by the authors. Table V. Relevant Properties of Recently Studied CVD and ALD SiNx Source Precursors.
Appendix A. Summary of SiN, Thermal, Plasma-Enhanced, Hot-Wire, and Remote Plasma-Enhanced Chemical Vapor Phase Deposition Parameters and Post Processing Treatments.
Appendix A. Summary of SiN, Thermal, Plasma-Enhanced, Hot-Wire, and Remote Plasma-Enhanced Chemical Vapor Phase Deposition Parameters and Post Processing Treatments.
Appendix A. Continued.
Appendix A. Continued.
Appendix C. Continued.
Appendix C. Continued.
Appendix C. Continued.
Appendix C. Continued.
Appendix C. Continued.
Appendix C. Continued.
Related topics:
Microelectronics And Semiconductor EngineeringCeramic TechnologyThin Films and CoatingsMechanical Behavior Of MaterialsSemiconductor MaterialsSilicon NitrideAdvanced CeramicsPVD, CVD, ALDAtomic Layer Deposition (ALD)Organosilicon Compounds
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