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Noise spectroscopy of AlGaN/GaN HEMT structures with long channels Figure 6. Schematic of the simulated HEMT structures with a sapphire substrate Active area is defined as a channel part between two TLM contacts.

Figure 6 Noise spectroscopy of AlGaN/GaN HEMT structures with long channels Figure 6. Schematic of the simulated HEMT structures with a sapphire substrate Active area is defined as a channel part between two TLM contacts.

Related Figures (9)

1. Introduction Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
1. Introduction Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
Figure 1. Measured J-V characteristics of: (a) TLM samples with different lengths at T = 290 K; (b) TLM sample with lengths of 40 wm at different temperatures T (K): 70, 90, 110, 130, 150, 170, 190, 210, 230, 250, 270, 290 and 300. Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
Figure 1. Measured J-V characteristics of: (a) TLM samples with different lengths at T = 290 K; (b) TLM sample with lengths of 40 wm at different temperatures T (K): 70, 90, 110, 130, 150, 170, 190, 210, 230, 250, 270, 290 and 300. Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
Figure 2. Non-equilibrium noise spectra of TLM structures with different channel lengths measured at voltages corresponding to the saturation noise level at T = 290 K: (a) original data, demonstrating real noise level; (b) data normalized to quasi-equilibrium noise. Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
Figure 2. Non-equilibrium noise spectra of TLM structures with different channel lengths measured at voltages corresponding to the saturation noise level at T = 290 K: (a) original data, demonstrating real noise level; (b) data normalized to quasi-equilibrium noise. Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
Figure 3. Normalized non-equilibrium noise dependence on voltage measured at frequency 1 Hz and different ambient temperatures for samples with a channel length of 100 wm.
Figure 3. Normalized non-equilibrium noise dependence on voltage measured at frequency 1 Hz and different ambient temperatures for samples with a channel length of 100 wm.
Figure 4. Dependence of characteristic time on dissipated power at different heat sink temperatures for a sample with channel length LZ = 40 yum.
Figure 4. Dependence of characteristic time on dissipated power at different heat sink temperatures for a sample with channel length LZ = 40 yum.
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels Figure 5. Dependences of the characteristic time on dissipated power for samples of different lengths at ambient temperature 7p = 290 K.
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels Figure 5. Dependences of the characteristic time on dissipated power for samples of different lengths at ambient temperature 7p = 290 K.
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels Figure 7. The calculated temperature rise in the channel of a TLM device processed on AlGaN/GaN heterostructure grown on 300 ym thick substrate as a function of channel length at different dissipated powers, P (W): 1—0.25; 20.40.
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels Figure 7. The calculated temperature rise in the channel of a TLM device processed on AlGaN/GaN heterostructure grown on 300 ym thick substrate as a function of channel length at different dissipated powers, P (W): 1—0.25; 20.40.
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels Figure 8. Dependence of mobility of 2DEG electrons on temperature in the TLM structures.
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels Figure 8. Dependence of mobility of 2DEG electrons on temperature in the TLM structures.
Figure 9. Dependence of 2DEG concentration of electrons on temperature in the channel of our TLM structures.
Figure 9. Dependence of 2DEG concentration of electrons on temperature in the channel of our TLM structures.
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Electrical EngineeringElectronic EngineeringCondensed Matter PhysicsMaterials ScienceSolid State PhysicsSemiconductor PhysicsSemiconductor NanostructuresSpectroscopyIII-V SemiconductorsModeling and Simulation
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