Figure 4 – uploaded by M. Fanciulli

Fig. 5. Plot of CET versus physical thickness of the annealed films at 900 °C for 60 s in Np. The « value is extracted from the slope of the linear fit. Fig. 4. C-V characteristics, measured at 50 kHz, for annealed films with different thicknesses. Gate areas of the capacitors were 7.8 x 10~*cm/?. In the inset, C-V curves are acquired at different frequencies for the 15 nm thick film. — Figure 5 Plot of CET versus physical thickness of the annealed films at 900 °C for 60 s in Np. The « value is extracted from the slope of the linear fit. Fig. 4. C-V characteristics, measured at 50 kHz, for annealed films with different thicknesses. Gate areas of the capacitors were 7.8 x 10~*cm/?. In the inset, C-V curves are acquired at different frequencies for the 15 nm thick film.

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$Fig. 1. RBS spectra of 30 nm thick film, as-deposited (black line) and after RTA (red line); the experimental spectra were fitted using RUMP software. (For interpreta- tion of the references to colour in this figure legend, the reader is referred to the web version of this article.) After RTA all the investigated films maintain an amorphous structure. On the other hand XRR analyses evidence a significant increase of film thickness, being larger for thin films. In particular, the thickness of as-deposited film increases from 5, 10, 20 and 31 nm to 10, 15, 27 and 41 nm, respectively. Moreover, for all an- nealed films RBS shows a significant fraction of Si in the films (Fig. 1, red line), evidencing for all thicknesses the formation of a silicate with LaAlSi,05 stoichiometry. Si incorporation in the films after annealing is further confirmed by ToF-SIMS depth profiles (Fig. 3). Flat profile related to 7°Si signal of the RTA film (Fig. 3, right) clearly indicates that Si is incorporated across the entire film thickness, while no Si is detected inside the as-deposited oxide film (Fig. 3, left). From this observation we conclude that RTA at 900 °C$

Fig. 1. RBS spectra of 30 nm thick film, as-deposited (black line) and after RTA (red line); the experimental spectra were fitted using RUMP software. (For interpreta- tion of the references to colour in this figure legend, the reader is referred to the web version of this article.) After RTA all the investigated films maintain an amorphous structure. On the other hand XRR analyses evidence a significant increase of film thickness, being larger for thin films. In particular, the thickness of as-deposited film increases from 5, 10, 20 and 31 nm to 10, 15, 27 and 41 nm, respectively. Moreover, for all an- nealed films RBS shows a significant fraction of Si in the films (Fig. 1, red line), evidencing for all thicknesses the formation of a silicate with LaAlSi,05 stoichiometry. Si incorporation in the films after annealing is further confirmed by ToF-SIMS depth profiles (Fig. 3). Flat profile related to 7°Si signal of the RTA film (Fig. 3, right) clearly indicates that Si is incorporated across the entire film thickness, while no Si is detected inside the as-deposited oxide film (Fig. 3, left). From this observation we conclude that RTA at 900 °C

Figure 4 – uploaded by M. Fanciulli

Related Figures (5)

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