Figure 2 DC circuit design can be done using Agilent advanced design system simulator. The DC simulation circuit is designed to define bias point and bias network. This is require in order to select the amplifier class of operation and power to be consumed by the device. The drain source voltage (VDS) is set to 28 volts, while the gate source voltage (VGS) is 2.4 volts respectively. This means that the bias condition has been set at the voltage source. However, these values have been recommended in the data sheet by the manufacturer. The design was simulated and drain source current (IDS) was achieved at 45mA as shown in figure 2. The DC quiescent current was achieved to prevent signal distortion [4, 5]. Like the main purpose of DC simulation is to specify the class of operation and the DC quiescent current is to prevent signal distortion. Bias circuit was also designed based on class-AB carrier. A good biasing prevents signal reflection and distortions. In addition to setting the bias network component values, linecalc from ADS simulator is to determine the length of micro-strip transmission lines required in the design. However, the lateral MOSFET MRF826060HSR3 transistor require no matching process, as the input and output impedances are internally matched in the device. The following RT 5880 subsirate specifications have been applied to achieve 21mm _ length of micro-strip line: H =