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Figure 18 Conduction band profile of two periods (active region + injector) of far-IR (A = 24 jxm) AlInAs/GalnAs quantum cascade laser under an applied electric field of 15 kV/cm. The layer thicknesses in nanometers of a single stage are, from left to right starting from the injection barrier (indicated by an arrow): 2.4/6.4/ 1.6 /6.8/1.4/7.0/1.2 /7.0/1.45 /7.7/ 0.4/9.7/0.35 /10.7/ 0.45/11.9. AllnAs layers are in bold. The underlined layers are n-type doped to n= 2 x 1017 cm—*. The moduli squared of the wave-functions of each state of the miniband are shown. Wavy arrows indicate the lasing transition. The laser radiation travels parallel to the layers and is TM polarized.
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