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Fig. 1 shows the variation of deposition rate with the oxygen content in the sputtering gas. At lower oxygen partial pressure (po,) the deposition rate is high and as po, in- creases the deposition rate decreases and reaches an almost constant value. The decrease

Figure 1 shows the variation of deposition rate with the oxygen content in the sputtering gas. At lower oxygen partial pressure (po,) the deposition rate is high and as po, in- creases the deposition rate decreases and reaches an almost constant value. The decrease

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Fig. 2. X-ray diffraction patterns of IngQ3 film prepared at po, = 0.1 Pa (1) annealed at 250°C in air for 1h, (2) as-prepared, and (3) annealed in argon at 500 °C for 1h All the films as deposited were polycrystalline. No diffraction peaks corresponding t metallic indium were observed even for films deposited at lower po,. The X-ray diffrac tion pattern of the film deposited at po, = 0.1 Pa shows a cubic IngO3 phase with : lattice parameter less than the theoretical one and has a broad asymmetric shoulde peak along with a (222) peak indicating the presence of a disordered structure. The X ray diffraction of this film after annealing in air at 250°C shows the beginning of th formation of stoichiometric IngO3. Annealing in argon at 500°C eliminates th shoulder peak which appeared along with the (222) peak in the as-deposited filn (Fig. 2). The trace amount of excess oxygen contained in the film or in the argos atmosphere is sufficient for the oxidation of the film and thereby optimisation of th structure. The X-ray diffraction peaks of all the films prepared at po, > 0.1 Pa re mained the same irrespective of annealing conditions. The X-ray diffraction curve show a definite relationship between po, and the crystal plane orientation of the film The X-ray diffraction patterns of IngO3 films prepared at different po, and annealec in argon at 500°C for 1h are shown in Fig. 3. Since the thickness of the film is les than the penetration depth of the X-rays, the X-ray diffraction intensity was correcte for the thin layer effect taking into account the thickness and density of the filn
Fig. 2. X-ray diffraction patterns of IngQ3 film prepared at po, = 0.1 Pa (1) annealed at 250°C in air for 1h, (2) as-prepared, and (3) annealed in argon at 500 °C for 1h All the films as deposited were polycrystalline. No diffraction peaks corresponding t metallic indium were observed even for films deposited at lower po,. The X-ray diffrac tion pattern of the film deposited at po, = 0.1 Pa shows a cubic IngO3 phase with : lattice parameter less than the theoretical one and has a broad asymmetric shoulde peak along with a (222) peak indicating the presence of a disordered structure. The X ray diffraction of this film after annealing in air at 250°C shows the beginning of th formation of stoichiometric IngO3. Annealing in argon at 500°C eliminates th shoulder peak which appeared along with the (222) peak in the as-deposited filn (Fig. 2). The trace amount of excess oxygen contained in the film or in the argos atmosphere is sufficient for the oxidation of the film and thereby optimisation of th structure. The X-ray diffraction peaks of all the films prepared at po, > 0.1 Pa re mained the same irrespective of annealing conditions. The X-ray diffraction curve show a definite relationship between po, and the crystal plane orientation of the film The X-ray diffraction patterns of IngO3 films prepared at different po, and annealec in argon at 500°C for 1h are shown in Fig. 3. Since the thickness of the film is les than the penetration depth of the X-rays, the X-ray diffraction intensity was correcte for the thin layer effect taking into account the thickness and density of the filn
Fig. 3. X-ray diffraction patterns of IngO3 films (annealed at 500°C for 1h) prepared at various oxygen partial pressures. The diffraction intensity is corrected for the thin layer effect using equa- tion (1) M. K. Jayaras, S. Loreti, A. AGATI, and A. PARRETTA
Fig. 3. X-ray diffraction patterns of IngO3 films (annealed at 500°C for 1h) prepared at various oxygen partial pressures. The diffraction intensity is corrected for the thin layer effect using equa- tion (1) M. K. Jayaras, S. Loreti, A. AGATI, and A. PARRETTA
Fig. 4. Variation of resistivity with oxygen partial pressure of as-deposited and annealed (for 1h) In,O3 films The electrical resistivity of the as-deposited and annealed (for 1h) films depends on po, during deposition as shown in Fig. 4. The resistivity of as-deposited films increases as the oxygen content in the sputtering gas increases from 0.1 to 1 Pa. In the present study all the films are prepared at comparatively high oxygen partial pressures. However, the film deposited at po, = 0.1 Pa could contain a little unreacted indium or amorphous IngO3 due to the higher sputtering rate. These facts are evident on annealing the films in argon or air atmosphere. All the films except film prepared at po, = 0.1 Pa have similar behaviour on annealing. Annealing these films (yo, > 0.1 Pa) in air at various temperatures for 1h, the resistivity and transmission decrease. The resistivity of these
Fig. 4. Variation of resistivity with oxygen partial pressure of as-deposited and annealed (for 1h) In,O3 films The electrical resistivity of the as-deposited and annealed (for 1h) films depends on po, during deposition as shown in Fig. 4. The resistivity of as-deposited films increases as the oxygen content in the sputtering gas increases from 0.1 to 1 Pa. In the present study all the films are prepared at comparatively high oxygen partial pressures. However, the film deposited at po, = 0.1 Pa could contain a little unreacted indium or amorphous IngO3 due to the higher sputtering rate. These facts are evident on annealing the films in argon or air atmosphere. All the films except film prepared at po, = 0.1 Pa have similar behaviour on annealing. Annealing these films (yo, > 0.1 Pa) in air at various temperatures for 1h, the resistivity and transmission decrease. The resistivity of these
Fig. 5. Variation of resistivity with annealing time of IngO3 film prepared at po, = 0.5 Pa
Fig. 5. Variation of resistivity with annealing time of IngO3 film prepared at po, = 0.5 Pa
Transmission and resistivity of indium oxide films deposited at different oxygen partial pressures
Transmission and resistivity of indium oxide films deposited at different oxygen partial pressures
Fig. 6. Transmission of as-deposited and annealed (in argon at 500 °C for 1 h) IngOs film (thickness 0.27 zm) prepared at po, = 0.5 Pa. Inset: Variation of refractive index and extinction coefficient with wavelength for the as-prepared and annealed (in argon at 500°C for 1h) In2Og film prepared at po, = 0.5 Pa Influence of O2 Pressure and Heat Treatment on the Properties of IngO3 Films
Fig. 6. Transmission of as-deposited and annealed (in argon at 500 °C for 1 h) IngOs film (thickness 0.27 zm) prepared at po, = 0.5 Pa. Inset: Variation of refractive index and extinction coefficient with wavelength for the as-prepared and annealed (in argon at 500°C for 1h) In2Og film prepared at po, = 0.5 Pa Influence of O2 Pressure and Heat Treatment on the Properties of IngO3 Films
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Magnetron SputteringReactive SputteringIndium tin oxide
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