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Towards Next-Generation Small-Size Boron Ion Implanting Apparatus

Profile image of Arnolds UbelisArnolds Ubelis

Proceedings of the Latvian Academy of Sciences. Section B. Natural, Exact, and Applied Sciences.

https://doi.org/10.2478/PROLAS-2022-0030
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Abstract

The article provides a brief insight in the history of ion implantation, paying special attention to boron ion implantation in high purity Germanium crystal, exclusively valuable in the production of highly effective sensors of high-energy radiation to detect photons in the range of megaelectron-volt or higher up to hard X-ray range. There is a need for small user-friendly implanters in response to urgent demand to scale up production of short wave sensors, which are in exclusive demand for various nuclear safety systems worldwide. Particularly, research driven “high tech” small and medium enterprises in Latvia are among the three leading worldwide producers of such sensors and systems. These SME provide instrumentation to the International Atomic Energy Agency, to the government of Singapore, to the government of Japan to facilitate dealing with nuclear waste management caused by the Fukushima disaster, and to the European Space Agency. The challenge is to find technology that allo...

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  69. CEÏÂ UZ JAUNAS PAAUDZES MINIATÛRU BORA JONU IMPLANTÂCIJAS APARÂTU Rakstâ analizçts, kâdâm jaunâko laiku tehnoloìiskâm inovâcijâm vçrts pievçrsties, kad mçríis ir izstrâdât visaugstâkâs tîrîbas iespçjami miniatûru, lçtu, bet eksperimentâla tipa raþoðanâ daþâdiem uzdevumiem viegli adaptçjamu bora jonu implantçðanas aparâtu. Konstatçts, ka liela nozîme ir pârejai uz cietvielu bora izejvielu gâzveida izejvielu vietâ un sniegtas atsauces uz vairâkâm publikâcijâm par perspektîvâm konstrukcijâm ðajâ jomâ, tai skaitâ, lietojot kombinçtu dobâ katoda izlâdes sistçmu ar nesçjgâzes apstrâdi ar induktîvi saistîtu plazmu dobâ katoda ieejâ, kâ arî izmantojot faktu, ka bora elektriskâ pretestîba ïoti strauji krîtas pie viegli sasniedzamas paaugstinâtas temperatûras.
  70. Konstatçts, ka ievçrojamu labumu varçtu gût, sistçmâ iestrâdâjot masspektrometrijas nozarç lieliski zinâmo, bet pagaidâm implantçðanai nepazîstamo kvadrupola masselektoru magnçtiskas sistçmas vietâ. Ieteikts izmçìinât kvarcu kâ vakuumsistçmas detaïu materiâlu, jo ðis materiâls pareizas sagatavoðanas apstâkïos ïauj iegût, iespçjams, lîdz èetrâm kârtâm mazâku vakuuma piesâròojumu nekâ labs nerûsoðais tçrauds lîdzîgos apstâkïos. Domâjams, ka raksts varçtu radît ievçrojamu interesi implantâcijas iekârtu izstrâdâtâjiem un arî maziem inovatîviem uzòçmumiem implantâcijas jomâ.

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Hassaram Bakhru

Physics Procedia, 2015

The UAlbany Dynamitron is used for high-energy ion implantation as well as for routine materials analysis. Its ion source can be run using any one of fourteen different gases, leading to concerns of contamination during an implantation. The system has the usual well-calibrated mass-separation using a magnetic analyzer. A pre-or post-implant mass spectrum through this analyzer can give a useful understanding of unintended ions within the source beam, but it does not provide direct identification for such ions as CO or diatomic nitrogen-14 when implanting silicon-28. Since these possible components have the same momentum and charge (i.e. +1), the beamline mass separator will transmit them all. Because backscattered ions from the mass-separated beam will have only atomic scattering, this allows for element detection following the breakup of any molecular ion components. The verification system consists of a back-angle particle detector along with a movable temporary target consisting of a very thin film of gold on a carbon or silicon substrate. The backscattered spectrum can then be analyzed for the presence of unwanted elements. While this does not provide for removal of the unwanted components, it does provide for the identification and measurement of the problem. We show the physical layout, software and extra details necessary for successful use of the technique.

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LA-UR- NATION A L LABORATORY High Purity Germanium Detector Repair Author(s
Guojian Wang

High purity germanium (HPGe) detectors are used to determine an objects output of gamma-ray radiation. This is done by counting charged particles released from the detectors inner materials when exposed to gamma-rays. As detectors age operational parameters change for the worse and detectors must be repaired. The damage that is received is due to both an accumulation of particulate matter and occasionally radiation damage (i.e. dislocation sites or trapping centers) to the germanium crystal. Liquid nitrogen operating temperatures expedites the collection of harmful particles. Crystal dislocations are created by the interaction between fast neutrons and the atoms of the crystal, these cause charge trapping, reduce amplitude of full-energy pulses and produce low-energy tails. All of which contribute to gamma-ray spectrum resolution degradation.

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The loss of boron in ultra-shallow boron implanted Si under heavy ion irradiation
PrimoŽ Pelicon

Radiation Effects and Defects in Solids, 2006

Heavy ion impact has been known to cause a loss of light elements from the near-surface region of the irradiated sample. One of the possible approaches to a better understanding of the processes responsible for the release of specific elements is to irradiate shallow-implanted samples, which exhibit a wellknown depth distribution of the implanted species. In this work, the samples studied were produced by implantation of Si <1 0 0> wafers with 11 B at implantation energies of 250 and 500 eV and fluence of 1.0 × 10 15 atoms/cm 2 . Elastic Recoil Detection Analysis was applied to monitor the remnant boron fluence in the sample. Irradiation of the samples by a 14.2 MeV 19 F 4+ beam resulted in a slow decrease of boron remnant fluence with initial loss rates of the order of 0.05 B atom per impact ion. Under irradiation with 12 MeV 32 S 3+ ions, the remnant boron fluence in Si decreased exponentially with a much faster loss rate of boron and became constant after a certain heavy ion irradiation dose. A simple model, which assumes a finite desorption range and corresponding depletion of the nearsurface region, was used to describe the observations. The depletion depths under the given irradiation conditions were calculated from the measured data.

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