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Outline

Title
Abstract
Acknowledgements
Introduction
Future System Trends
High Power Microwave Amplifier Design Process
Analysis -The Cripps Load
Load Pull Summary 1.5.3
Research Objective & Thesis Structure
De-Embedding Measurement Data
De-Embedding Limitation 3.4.5
Simulation Methods
Standard Large Signal Simulation Methods
Voltage Source Simulation Methods
Waveform Engineering Simulation Method 4.2.1
Conclusion
Measurement Results
Measurement Conclusion 5.4.7
Design Strategy Using Input Waveforms
Gan Mmic Amplifier Design
Iaf GAN25 Process Overview
Initial Pa Design Analysis
Cripps Load Analysis 6.2.2
Design
Conclusions
References
All Topics
Engineering

RF-IV waveform engineering inspired MMIC design

Profile image of Merv HaynesMerv Haynes

2017

https://doi.org/10.1109/CSICS.2013.6659232
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Abstract

The research work presented in this thesis sets out to investigate improvements to the power amplifier (PA) design cycle through the use of Waveform Engineering techniques. This is approached using alternative simulation methods with strong links to the data available from time domain based radio frequency waveform measurement and characterisation systems. One key objective of this work is to improve the overall efficiency of the radiofrequency power amplifier stage by focusing on circuit design. More specifically, the direct utilisation of waveform-engineering techniques in the development of multi-stage amplifiers to improve power added efficiency was targeted. In developing these power amplifier design methodologies, the techniques are demonstrated and validated using monolithic microwave integrated circuit (MMIC) implementation. This work has also led to an increase in understanding of the operation of the device terminal waveforms which is used to drive an alternative simulatio...

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References (132)

  1. Raytheon "Technology Today", 2014 Issue 1 pp8-13 [Online] Available http://www.raytheon.com/news/technology_today/2014_i1/aesa.html Accessed 25-May-2015
  2. Selex ES Ltd Captor-E radar [Online] Available http://www.selex- es.com/domains/air/radar/captor-e-radar Accessed 08-jun-2105
  3. A. McLachlan, R. Mackay, G. Morrison, K. Panton, I. Stevenson , I. Davies, M. Haynes, "Novel 3-D Microwave Assembly allows Integrated Low Cost Front-Ends for ESCAN Radar and EW TRMsAESA technology" Polaris Innovation Journal, Selex ES, issue 22 May 2015.
  4. Selex ES Ltd "BriteCloud Press release" [Online] Available http://www.selex-es.com/-/britecloudlaunch Accessed 08-Jun-2015
  5. Finmeccanica -Press release "Selex ES BriteCloud decoy successfully deployed from Saab Gripen" [Online] Available http://www.selex-es.com/- /britecloud-deployed-from-saab-gripen. Accessed 08-Jun-2015
  6. DARPA Multifunction RF (MFRF) programme [Online] Available http://www.darpa.mil/program/multifunction-rf Accessed 12-Apr-2016
  7. DSTL Integrated sensing [Online] Available https://www.gov.uk/government/uploads/system/uploads/attachment_data/fi le/433380/IntegratedSensing.pdf accessed 12-Apr-16
  8. 15.4 J. J. Komiak, Wendell Kong and K. Nichols, "High efficiency wideband 6 to 18 GHz PHEMT power amplifier MMIC," 2002 IEEE MTT- S International Microwave Symposium Digest (Cat. No.02CH37278), Seattle, WA, USA, 2002, pp. 905-907 vol.2
  9. Colantonio, P., Giannini, F., Limiti, E. "High Efficiency RF and Microwave Solid State Power Amplifiers", John Wiley, 2009, ISBN 978-0-470-51300- 2.
  10. Cripps, S.C.; , "A Theory for the Prediction of GaAs FET Load-Pull Power Contours," Microwave Symposium Digest, 1983 IEEE MTT-S International, vol., no., pp.221-223, May 31 1983-June 3 1983.
  11. Max W Medley Jr. "Microwave and RF circuits: Analysis, Synthesis and design", Artech House, 1992, ISBN 0-89006-546-2.
  12. Tri T Ha, "Solid state microwave Amplifier design", John Wiley & Sons Inc., 1981, ISBN 0-471-08971-0.
  13. Cripps, S "RF Power amplifiers for wireless communications", 2nd Edition, Artech House, 2006, ISBN1-596-93-018-7.
  14. Cripps, S.C.; Tasker, P.J.; Clarke, A.L.; Lees, J.; Benedikt, J.; , "On the Continuity of High Efficiency Modes in Linear RF Power Amplifiers," Microwave and Wireless Components Letters, IEEE , vol.19, no.10, pp.665-667, Oct. 2009.
  15. Maury Application note, AN 5A-062, "A Beginner's Guide To All Things Load Pull" Mar 2015. [Online] Available https://www.maurymw.com/pdf/datasheets/5A-062.pdf Accessed 19/11/2015.
  16. Maury Microwave Corporation, LXI datasheet, [Online] Available https://www.maurymw.com/pdf/datasheets/4T-050G04.pdf accessed 25- May-2015
  17. Focus Microwaves, Multi Harmonic Tuner datsheet, [Online] Available http://www.focus-microwaves.com/sites/default/files/iMPT-2640.pdf accesed 25-May-2015
  18. Maury Application note, AN 5C-044, "Device Characterisation with Harmonic Source and Load Pull" Dec 2000. [Online] Available https://www.maurymw.com/pdf/datasheets/5C-044.pdf Accessed 19/11/2015.
  19. Y.Takayama, "A New Load-Pull Characterization Method for Microwave Power Transistors," Microwave Symposium, 1976 IEEE-MTT-S International, Cherry Hill, NJ, USA, 1976, pp. 218-220
  20. Benedikt, J.; Gaddi, R.; Tasker, P.J.; Goss, M.; , "High-power time-domain measurement system with active harmonic load-pull for high-efficiency base-station amplifier design," Microwave Theory and Techniques, IEEE Transactions on , vol.48, no.12, pp.2617-2624, Dec 2000
  21. Colantonio, P.; Giannini, F.; Limiti, E.; Teppati, V.; , "An approach to harmonic load-and source-pull measurements for high-efficiency PA design," Microwave Theory and Techniques, IEEE Transactions on , vol.52, no.1, pp. 191-198, Jan. 2004
  22. Tyler, V. J. "A New High-Efficiency High Power Amplifier." The Marconi Review, vol. 21, no. 130 (Fall 1958): 96-109.
  23. Tasker, P.J.; , "Practical waveform engineering," Microwave Magazine, IEEE , vol.10, no.7, pp.65-76, Dec. 2009
  24. Snider, D.M.; , "A theoretical analysis and experimental confirmation of the optimally loaded and overdriven RF power amplifier," Electron Devices, IEEE Transactions on , vol.14, no.12, pp. 851-857, Dec 1967
  25. Raab, F.H.; "Class-F power amplifiers with maximally flat waveforms" Microwave Theory and Techniques, IEEE Transactions on Volume 45, Issue 11, Nov. 1997 Page(s):2007 -2012
  26. Raab, F.H.; "Class-F power amplifiers with reduced conduction angles" Broadcasting, IEEE Transactions on, Volume 44, Issue 4, Dec. 1998 Page(s):455 -459
  27. Raab, F.H.; "Maximum efficiency and output of class-F power amplifiers" Microwave Theory and Techniques, IEEE Transactions on Volume 49, Issue 6, Part 2, June 2001 Page(s):1162 -1166
  28. Raab, F.H.; "Class-E, Class-C, and Class-F power amplifiers based upon a finite number of harmonics", Microwave Theory and Techniques, IEEE Transactions on, Volume 49, Issue 8, Aug. 2001 Page(s):1462 -1468.
  29. Colantonio, F. Giannini, G. Leuzzi and E. Limiti, "Improving Performances of Low-Voltage Power Amplifiers by Second-Harmonic Manipulation", Proceedings of the GAAS'98, Amsterdam, The Netherlands, October 1998.
  30. Colantonio, P.; Giannini, F.; Leuzzi, G.; Limiti, E.; , "Very high efficiency microwave amplifier. The harmonic manipulation approach," Microwaves, Radar and Wireless Communications. 2000. MIKON-2000. 13th International Conference on , vol.3, no., pp.33-46 vol.3, 2000.
  31. Colantonio, P.; Giannini, F.; Leuzzi, G.; Limiti, E.; , "Harmonic tuned PAs design criteria," Microwave Symposium Digest, 2002 IEEE MTT-S International , vol.3, no., pp.1639-1642, 2002.
  32. Colantonio, P., Giannini, F., Giofre, R., Limiti, E., Serino, A., Peroni, M., Romanini, P., and Proietti, C.: 'A C-band high-efficiency second harmonic- tuned hybrid power amplifier in GaN technology', IEEE Trans. Microw. Theory Tech., 2006, 54, (6), pp. 2713-2722.
  33. P. Colantonio, F. Giannini, G. Leuzzi, and E. Limiti, "Theoretical facet and experimental results of harmonic tuned PAs," Int. J. RF Microwave Computer-Aided Eng., vol. 13, no. 6, pp. 459-472, Nov. 2003.
  34. Cipriani, E.; Colantonio, P.; Giannini, F.; Giofre, R.; , "Theoretical and experimental comparison of Class F vs. Class F-1 PAs," Microwave Integrated Circuits Conference (EuMIC), 2010 European , vol., no., pp.428- 431, 27-28 Sept. 2010.
  35. Carrubba, V.; Clarke, A.L.; Akmal, M.; Lees, J.; Benedikt, J.; Tasker, P.J.; Cripps, S.C.; , "On the Extension of the Continuous Class-F Mode Power Amplifier," Microwave Theory and Techniques, IEEE Transactions on , vol.59, no.5, pp.1294-1303, May 2011.
  36. Shouxuan Xie et al., "High-linearity class B power amplifiers in GaN HEMT technology," in IEEE Microwave and Wireless Components Letters, vol. 13, no. 7, pp. 284-286, July 2003.
  37. P. Wright, J. Lees, J. Benedikt, P. J. Tasker and S. C. Cripps, "A Methodology for Realizing High Efficiency Class-J in a Linear and Broadband PA," in IEEE Transactions on Microwave Theory and Techniques, vol. 57, no. 12, pp. 3196-3204, Dec. 2009.
  38. AlMuhaisen, A.; Wright, P.; Lees, J.; Tasker, P.; Cripps, S.; Benedikt, J.; , "Novel wide band high-efficiency active harmonic injection power amplifier concept," Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International , vol., no., pp.1, 23-28 May 2010.
  39. White, P. "Effect of input harmonic terminations on high efficiency class B and class F operation of PHEMT devices", IEEE MTT-S Int Dig., 1998, Vol. 3, pp. 1611-1614.
  40. Gao, S., Butterworth, P., Ooi, S., and Sambell, A.: 'High-efficiency power amplifier design including input harmonic termination', IEEE Trans. Microw. Wirel. Compon. Lett., 2005, 16, (2), pp. 81-83.
  41. Maeda, M.; Takehara, H.; Nakamura, M.; Ota, Y.; Ishikawa, O.; , "A high power and high efficiency amplifier with controlled second-harmonic source impedance," Microwave Symposium Digest, 1995., IEEE MTT-S International , vol., no., pp.579-584 vol.2, 16-20 May 1995
  42. Maeda, M.; Masato, H.; Takehara, H.; Nakamura, M.; Morimoto, S.; Fujimoto, H.; Ota, Y.; Ishikawa, O.; , "Source second-harmonic control for high efficiency power amplifiers ," Microwave Theory and Techniques, IEEE Transactions on , vol.43, no.12, pp.2952-2957, Dec 1995
  43. Canning, T.; Tasker, P.; Cripps, S., "Waveform Evidence of Gate Harmonic Short Circuit Benefits for High Efficiency X-Band Power Amplifiers," Microwave and Wireless Components Letters, IEEE , vol.23, no.8, pp.439,441, Aug. 2013.
  44. Yamanaka, K.; Tuyama, Y.; Ohtsuka, H.; Chaki, S.; Nakayama, M.; Hirano, Y.; , "Internally-matched GaN HEMT high efficiency power amplifier for Space Solar Power Stations," Microwave Conference Proceedings (APMC), 2010
  45. Asia-Pacific , vol., no., pp.119-122, 7-10 Dec. 2010.
  46. Mitsubishi Electric,"Mitsubishi Electric raises the bar for PAE", Compound semiconductor June 2011. [Online] Available http://www.compoundsemiconductor.net/article/88081-mitsubishi-electrics- gan-hemt-raises-the-bar-for-pae.html accessed 20-June-2011.
  47. Ingruber, B., Pritzl, W., Smely, D., Wachutka, M., Magerl, G., "High- Efficiency Harmonic-Control Amplifier", IEEE Trans. Microw. TheoryTech. , Vol. 46, No.6, 1998, pp857-862.
  48. Ramadan, A.; Reveyrand, T.; Martin, A.; Nebus, J.M.; Bouysse, P.; Lapierre, L.; Villemazet, J.F.; Forestier, S.; , "Experimental study on effect of second-harmonic injection at input of classes F and F-1 GaN power amplifiers," Electronics Letters , vol.46, no.8, pp.570-572, April 15 2010.
  49. Ramadan, A.; Martin, A.; Reveyrand, T.; Nebus, J.-M.; Bouysse, P.; Lapierre, L.; Villemazet, J.F.; Forestier, S.; , "Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape," Microwave Conference, 2009. EuMC 2009. European , vol., no., pp.1840- 1843, Sept. 29 2009-Oct. 1 2009
  50. Ramadan, A.; Reveyrand, T.; Martin, A.; Nebus, J.-M.; Bouysse, P.; Lapierre, L.; Villemazet, J.-F.; Forestier, S., "Two-Stage GaN HEMT Amplifier With Gate-Source Voltage Shaping for Efficiency Versus Bandwidth Enhancements," Microwave Theory and Techniques, IEEE Transactions on , vol.59, no.3, pp.699,706, March 2011.
  51. Yamanaka, K.; Tuyama, Y.; Ohtsuka, H.; Chaki, S.; Nakayama, M.; Hirano, Y.; , "Internally-matched GaN HEMT high efficiency power amplifier for Space Solar Power Stations," Microwave Conference Proceedings (APMC), 2010
  52. Asia-Pacific , vol., no., pp.119-122, 7-10 Dec. 2010.
  53. Kusunoki, S.; Kawakami, K.; Hatsugai, T.; , "Load-impedance and bias- network dependence of power amplifier with second harmonic injection," Microwave Theory and Techniques, IEEE Transactions on , vol.52, no.9, pp. 2169-2176, Sept. 2004.
  54. Chun-Wah Fan; Cheng, K.-K.M.; , "Amplifier linearization using simultaneous harmonic and baseband injection," Microwave and Wireless Components Letters, IEEE , vol.11, no.10, pp.404-406, Oct 2001.
  55. Rhodes, J. D. (2003), "Output universality in maximum efficiency linear power amplifiers", Int. J. Circ. Theor. Appl., 31: 385-405.
  56. Hek, de, A. P. (2002), "Design, realisation and test of GaAs-based monolithic integrated X-band high-power amplifiers" Eindhoven: Technische Universiteit, Eindhoven. ISBN 90-386-1920-0
  57. Follmann, R.; Borkes, J.; Waldow, P.; Wolff, I.; "Extraction and modeling methods for FET devices," Microwave Magazine, IEEE , vol.1, no.3, pp.49- 55, Sep 2000.
  58. Vadalà, Valeria;Avolio, Gustavo; Raffo, Antonio; Schreurs, Dominique M.M.-P. ;Vannini, Giorgio; "embedding and de-embedding techniques for large-signal fet measurements", Microw. Opt. Technol. Lett., vol 54, No.12, 2012, pp2835-2838.
  59. Alt, A.R.; Marti, D.; Bolognesi, C.R., "Transistor Modeling: Robust Small- Signal Equivalent Circuit Extraction in Various HEMT Technologies," Microwave Magazine, IEEE , vol.14, no.4, pp.83,101, June 2013.
  60. Golio, M, "Microwave MESFETs and HEMTs", Artech House, 1991 ISBN 0-89006-426-1
  61. Peter H. Ladbrooke, "MMIC Design: GaAs FETs and HEMTs" Artech House, 1989, ISBN-10: 0890063141.
  62. Aboush, Zaid. "Design, Characterization and Realization of Thin Film Packaging for both Broadband and High Power Applications" PhD Thesis, 2007, Cardiff University.
  63. Rytting, D. "VNA Error Models and Calibration Methods" ARFTG Short Course on Microwave Measurements and Instrumentation December 2-3, 2003.
  64. Agilent Application Note AN1287-1 "Understanding the Fundamental Principles of Vector Network Analysis" [Online] available http://cp.literature.agilent.com/litweb/pdf/5965-7707E.pdf accessed 10/11/2009.
  65. Agilent Application Note AN1287-3 "3 Applying Error Correction to Network Analyzer Measurements" [Online] available http://cp.literature.agilent.com/litweb/pdf/5965-7709E.pdf accessed 10/11/2009.
  66. Agilent Application Note AN1287-9 " In-Fixture Measurements Using Vector Network Analyzers" [Online] available http://cp.literature.agilent.com/litweb/pdf/5968-5329E.pdf accessed 10/11/2009.
  67. Agilent Application Note AN1287-11 "Specifying Calibration Standardsand Kits for Agilent Vector Network Analyzers" [Online] available http://cp.literature.agilent.com/litweb/pdf/5989-4840EN.pdf accessed 10/11/2009.
  68. On Wafer Vector Network Analyzer Calibration & Measurements, Application Note, Cascade Microtech Inc. 2002. https://www.cmicro.com/files/ONWAFER.pdf Online: accessed 14/09/2015.
  69. Benedikt, J.; Gaddi, R.; Tasker, P.J.; Goss, M.; , "High-power time-domain measurement system with active harmonic load-pull for high-efficiency base-station amplifier design," Microwave Theory and Techniques, IEEE Transactions on , vol.48, no.12, pp.2617-2624, Dec 2000.
  70. Agilent Application Note AN1364-1 "De-Embedding and Embedding S- Parameter Networks Using a Vector Network Analyzer" [Online] available http://literature.cdn.keysight.com/litweb/pdf/5980- 2784EN.pdf?id=1000001869:epsg:apn accessed 10/11/2009.
  71. Cheolung Cha; Zhaoran Huang; Jokerst, N.M.; Brooke, M.A., "Test- structure free modeling method for de-embedding the effects of pads on device modeling," in Electronic Components and Technology Conference, 2003. Proceedings. 53rd , vol., no., pp.1694-1700, May 27-30, 2003
  72. Mangan, A.M.; Voinigescu, S.P.; Ming-Ta Yang; Tazlauanu, M., "De- embedding transmission line measurements for accurate modeling of IC designs," in Electron Devices, IEEE Transactions on , vol.53, no.2, pp.235- 241, Feb. 2006
  73. R.Wang and M.H.Cho, "An Efficient Parasitic De-Embedding Technique for S-Parameter Characterization of Silicon-Based RF/Microwave Devices" Wireless Online Design, White Paper Feb 2007. [Online] Available http://www.wirelessdesignonline.com/doc/an-efficient-parasitic-de- embedding-technique-0001 Accessed 14/02/2010.
  74. Cho, M.H.; Chiu, C.S.; Huang, G.W.; Teng, Y.M.; Chang, L.H.; Chen, K.M.; Chen, W.L., "A fully-scalable de-embedding method for on-wafer S- parameter characterization of CMOS RF/microwave devices [MOSFET example]," in Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE , vol., no., pp.303-306, 12-14 June 2005.
  75. Pengelly, R; Pribble, B; "Intrinsic Cree GaN HEMT Models Allow More Accurate Waveform Engineered PA Designs" ARMMS conference April 2013.
  76. M.Brookbanks/R.Davis personal communication
  77. P. J. vanWijnen, H. R. Classen, and E. A.Wolsheimer, "A new straightforward calibration and correction procedure for "on wafer" high frequency S-parameter measurements (45 MHz-18 GHz)," in Proc. IEEE BCTM, Sep. 1987, pp. 70-73.
  78. Koolen, M.C.A.M.; , "On-wafer high-frequency device characterization," Solid State Device Research Conference, 1992. ESSDERC '92. 22nd
  79. European , vol., no., pp.679-686, 14-17 Sept. 1992
  80. Koolen, M.C.A.M.; Geelen, J.A.M.; Versleijen, M.P.J.G.; , "An improved de-embedding technique for on-wafer high-frequency characterization," Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991 , vol., no., pp.188-191, 9-10 Sep 1991
  81. Hughes, B.; Tasker, P.J.; , "Bias dependence of the MODFET intrinsic model elements values at microwave frequencies," Electron Devices, IEEE Transactions on , vol.36, no.10, pp.2267-2273, Oct 1989
  82. P. J. Tasker and J. Braunstein, "New MODFET small signal circuit model required for millimeter-wave MMIC design: extraction and validation to 120 GHz," Microwave Symposium Digest, 1995., IEEE MTT-S International, Orlando, FL, USA, 1995, pp. 611-614 vol.2.
  83. Jarndal, A.; Kompa, G.; , "A new small-signal modeling approach applied to GaN devices," Microwave Theory and Techniques, IEEE Transactions on , vol.53, no.11, pp. 3440-3448, Nov. 2005
  84. Caddemi, Alina; Crupi, Giovanni; Macchiarella, Alessio;, "On wafer-scaled GaAs HEMTs: Direct and robust small signal modeling up to 50 GHz, Microw. Opt. Technol. Lett., vol51, no.8, 2009, pp 1958-1963.
  85. Dambrine, G.; Cappy, A.; Heliodore, F.; Playez, E.; , "A new method for determining the FET small-signal equivalent circuit," Microwave Theory and Techniques, IEEE Transactions on , vol.36, no.7, pp.1151-1159, Jul 1988
  86. Diamand, F.; Laviron, M.; , "Measurement of the Extrinsic Series Elements of a Microwave Mesfet Under Zero Current Conditions," Microwave Conference, 1982. 12th European, vol., no., pp.451-456, 13-17 Sept. 1982
  87. Tasker, P.J.; Hughes, B.; , "Importance of source and drain resistance to the maximum f T of millimeter-wave MODFETs," Electron Device Letters, IEEE , vol.10, no.7, pp.291-293, Jul 1989
  88. Golio, M; , "Characterization, parameter extraction and modeling for high frequency applications," Microwave Conference, 1993. 23rd European , vol., no., pp.69-72, 6-10 Sept. 1993.
  89. M. E. Hoque, M. Heimlich, J. Tarazi, A. Parker and S. Mahon, "Scalable HEMT model for small signal operations," 2010 International Conference on Electromagnetics in Advanced Applications, Sydney, NSW, 2010, pp. 309-312.
  90. D. Resca et al., "Scalable Nonlinear FET Model Based on a Distributed Parasitic Network Description," in IEEE Transactions on Microwave Theory and Techniques, vol. 56, no. 4, pp. 755-766, April 2008.
  91. 5_63 D. Resca, A. Raffo, A. Santarelli, G. Vannini and F. Filicori, "Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM Analyses," in IEEE Transactions on Microwave Theory and Techniques, vol. 57, no. 2, pp. 245-253, Feb. 2009.
  92. Arnold, E.; Golio, M.; Miller, M.; Beckwith, B.; , "Direct extraction of GaAs MESFET intrinsic element and parasitic inductance values," Microwave Symposium Digest, 1990., IEEE MTT-S International , vol., no., pp.359-362 vol.1, 8-10 May 1990
  93. Costa, J.C.; Miller, M.; Golio, M.; Norris, G.; , "Fast, accurate, on-wafer extraction of parasitic resistances and inductances in GaAs MESFETs and HEMTs," Microwave Symposium Digest, 1992., IEEE MTT-S International , vol., no., pp.1011-1014 vol.2, 1-5 Jun 1992
  94. Pu Yan, Pang Lei, Wang Liang, Chen Xiaojuan, Li Chengzhan, Liu Xinyu "Improvements to the extraction of an AlGaN/GaN HEMT small-signal model", Journal of Semiconductors, vol.30, no.12, 2009
  95. Diamand, F.; Laviron, M.; , "Measurement of the Extrinsic Series Elements of a Microwave Mesfet Under Zero Current Conditions," Microwave Conference, 1982. 12th European, vol., no., pp.451-456, 13-17 Sept. 1982
  96. Chung-Hwan Kim; Kyung-Sik Yoon; Jeon-Wook Yang; Jin-Hee Lee; Chul- Soon Park; Jae-Jin Lee; Kwang-Eui Pyun; , "A new extraction method to determine bias-dependent source series resistance in GaAs FET's," Microwave Theory and Techniques, IEEE Transactions on , vol.46, no.9, pp.1242-1250, Sep 1998.
  97. Hao Qi; Benedikt, J.; Tasker, P.J.; "Nonlinear Data Utilization: From Direct Data Lookup to Behavioral Modeling", Microwave Theory and Techniques, IEEE Transactions on, Volume: 57 , Issue: 6, 2009 , Page(s): 1425 -1432.
  98. Root, D.E.; Verspecht, J.; Sharrit, D.; Wood, J.; Cognata, A.; , "Broad-band poly-harmonic distortion (PHD) behavioral models from fast automated simulations and large-signal vectorial network measurements," Microwave Theory and Techniques, IEEE Transactions on , vol.53, no.11, pp. 3656- 3664, Nov. 2005.
  99. P.J.Tasker, J.J.Bell, "Waveform engineering in ADS", personal communication, October 2015.
  100. Junghwan Moon; Jangheon Kim; Jungjoon Kim; Ildu Kim; Kim, Bumman, "Efficiency Enhancement of Doherty Amplifier Through Mitigation of the Knee Voltage Effect," Microwave Theory and Techniques, IEEE Transactions on , vol.59, no.1, pp.143,152, Jan. 2011
  101. AlMuhaisen, A.; Wright, P.; Lees, J.; Tasker, P.; Cripps, S.; Benedikt, J.; , "Novel wide band high-efficiency active harmonic injection power amplifier concept," Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International , vol., no., pp.1, 23-28 May 2010
  102. Shur, Michael. "GaAs Devices and Circuits", Plenum Press,1987, ISBN 0- 306-42192-5
  103. S.P. Murray, K.P. Roenker, "An analytical model for SiC MESFETs", Solid-State Electronics, Volume 46, Issue 10, October 2002, Pages 1495- 1505, ISSN 0038-1101
  104. Oh, S.; Wong, H.-S.P., "A Physics-Based Compact Model of III-V FETs for Digital Logic Applications: Current-Voltage and Capacitance-Voltage Characteristics," Electron Devices, IEEE Transactions on , vol.56, no.12, pp.2917,2924, Dec. 2009
  105. P.H Ladbrooke, "MMIC Design: GaAs FETs and HEMTs" Artech House, 1989, ISBN 0-89006-314-1
  106. Chen, T.-H.; Shur, M.S., "A capacitance model for GaAs MESFET's," Electron Devices, IEEE Transactions on , vol.12, no.5, pp.883,891, May 1985
  107. Takada, T.; Yokoyama; Kiyoyuki; Ida, M.; Sudo, T., "A MESFET Variable-Capacitance Model for GaAs Integrated Circuit Simulation," Microwave Theory and Techniques, IEEE Transactions on , vol.30, no.5, pp.719,724, May 1982
  108. A. J. Valois , G. Y. Robinson , K. Lee and M. S. Shur "Temperature dependence of the I-V characteristics of modulation-doped FET\'s", J. Vac. Sci. Technol., vol. 1, pp.190 -195 1983.
  109. Rollett, J.M., "Stability and Power-Gain Invariants of Linear Twoports," Circuit Theory, IRE Transactions on , vol.9, no.1, pp.29,32, Mar 1962.
  110. Teeter, D.; Platzker, A.; Bourque, R.; , "A compact network for eliminating parametric oscillations in high power MMIC amplifiers," Microwave Symposium Digest, 1999 IEEE MTT-S International , vol.3, no., pp.967- 970 vol.3, 1999
  111. IAF ADS Design Kit documentation, "Description of active AlGaN/GaN HEMT microstrip components on SiC substrate for the IAF "GaN25" technology.", Version 2.00, IAFpdk_GE_MSL_A200_enc.pdf
  112. IAF ADS Design Kit documentation , "Description of passive microstrip components on SiC substrate for the IAF "GaN25" technology", Version 2.00, IAFpdk_GE_MSL_P200_enc.pdf
  113. CEL application note AN82901, 2003. [Online] Available http://www.cel.com/pdf/appnotes/an82901.pdf Accessed 16/5/2016
  114. John Bellantoni, "Bias Techniques for GaN and pHEMT Depletion Mode Devices", TriQuint Technical paper 2014, [Online] Available http://www.triquint.com/Resources/technical-papers/Bias-Techniques-for- GaN-and-pHEMT-Depletion-Mode-Devices.pdf Accessed 16/05/2016
  115. Ohtomo, M., "Stability analysis and numerical simulation of multidevice amplifiers," Microwave Theory and Techniques, IEEE Transactions on , vol.41, no.6, pp.983,991, Jun/Jul 1993
  116. Dehghan, N.; Porch, A; Cripps, S.C.; Aaen, P.H., "A novel high resolution E-field microscope system with applications in HPA diagnostics," Microwave Measurement Symposium (ARFTG), 2011 78th ARFTG , vol., no., pp.1,3, 1-2 Dec. 2011
  117. Dehghan, N.; Cripps, S.; Porch, A; Lees, J., "An improved electric field probe with applications in high efficiency PA design and diagnostics," Microwave Measurement Conference (ARFTG), 2013 81st ARFTG , vol., no., pp.1,4, 7-7 June 2013
  118. T. Reveyrand, A. Mallet, J. M. Nebus, and V. M. Bossche, "Calibrated measurements of waveforms at internal nodes of MMICs with a LSNA and high impedance probes," in 62nd ARFTG Conf. Dig., Boulder, CO, Dec. 2003, pp. 71-76.
  119. Ablestik 84-1 LMI NB datasheet [Online] Available http://www.hitek- ltd.co.uk/media/downloads/4841/Ablestik%2084%201LMI%20NB%20(For merly%20Ablebond%2084%201LMI%20NB)%20(2010).pdf Accessed 09-May-16.
  120. G.Gonzalez, "Microwave Transistor Amplifier: Analysis and Design", 2 nd Edition, Prentice-Hall Inc, 1996, ISBN:0-13-254335-4
  121. Epotek H20E technical datasheet, [Online] Available http://www.epotek.com/site/administrator/components/com_products/assets /files/Style_Uploads/H20E.pdf Accessed 01-Mar-2015.
  122. H. Uchida, M. Nii, Y. Tsukahara, M. Miyazaki and Y. Itoh, "A compact T/R switching circuit using quadrature couplers and drain-driven HPAs," Microwave Symposium Digest, 2001 IEEE MTT-S International, Phoenix, AZ, USA, 2001, pp. 1349-1352 vol.2.
  123. D. J. Shepphard, J. Powell and S. C. Cripps, "An Efficient Broadband Reconfigurable Power Amplifier Using Active Load Modulation," in IEEE Microwave and Wireless Components Letters, vol. 26, no. 6, pp. 443-445, June 2016.
  124. Parikh, P.; Wu, Y.; Moore, M.; Chavarkar, P.; Mishra, U.; Neidhard, R.; Kehias, L.; Jenkins, T., "High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs", High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on, 6-8 Aug. 2002 Page(s):415 -421
  125. Krausse,.D.; Quay,.R.; Keifer,.R.; Tessman,.A.; Massler,.H.; Leuther,.A; Merkle,.T.; Muller,.S.;Schworer, C; Mikulla, M.;Schlechtweg, M; Weimann, G.; "Robust GaN HEMT Low-Noise Amplifier MMICs for X- Band Applications",Proceedings 12th GAAS Symposium 2004, Page(s) 71- 74.
  126. Cha, S.; Chung, Y.H.; Wojtowwicz, M.; Smorchkova, I.; Allen, B.R.; Yang, J.M.; Kagiwada, R., "Wideband AlGaN/GaN HEMT low noise amplifier for highly survivable receiver electronics", Microwave Symposium Digest, 2004 IEEE MTT-S International, Volume 2, 6-11 June 2004 Page(s):829 - 831 Vol.2
  127. Micovic, M.; Kurdoghlian, A.; Lee, T.; Hiramoto, R.O.; Hashimoto, P.; Schmitz, A.; Milosavljevic, I.; Willadsen, P.J.; Wong, W.-S.; Antcliffe, M.; Wetzel, M.; Hu, M.; Delaney, M.J.; Chow, D.H., "Robust Broadband (4 GHz -16 GHz) GaN MMIC LNA", Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE, 14-17 Oct. 2007 Page(s):1 -4
  128. Janssen, J.; van Heijningen, M.; Provenzano, G.; Visser, G.C.; Morvan, E.; van Vliet, F.E., "X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling", Compound Semiconductor Integrated Circuits Symposium, 2008. CSICS '08. IEEE 12-15 Oct. 2008, Page(s): 1-4
  129. Chen, Y.C.; Barsky, M.; Tsai, R.; Lai, R.; Yen, H.C.; Oki, A.; Streit, D.C., "Survivability of InP HEMT devices and MMICs under high RF input drive", Microwave Symposium Digest., 2000 IEEE MTT-S International Volume 3, 11-16 June 2000 Page(s):1917 -1920 vol.3
  130. Rudolph, M.; Behtash, R.; Hirche, K.; Wurfl, J.; Heinrich, W.; Trankle, G., "A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier", Microwave Symposium Digest, 2006. IEEE MTT-S International, 11-16 June 2006 Page(s):1899 -1902
  131. Rudolph, M.; Behtash, R.; Doerner, R.; Hirche, K.; Wurfl, J.; Heinrich, W.; Trankle, G., "Analysis of the Survivability of GaN Low-Noise Amplifiers", Microwave Theory and Techniques, IEEE Transactions on, Volume 55, Issue 1, Jan. 2007 Page(s):37 -43.
  132. Haynes, M.; Bullen, A; Hone, D; Singh, D; "Overview of GaN Technology applications within Finmeccanica" in Automated RF and Microwave Measurement Society Conference, April 2016.

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