Spintronics Essentials and Applications

IBM journal of research and development, 2006

Spintronics is a rapidly emerging field of science and technology that will most likely have a significant impact on the future of all aspects of electronics as we continue to move into the 21st century. Conventional electronics are based on the charge of the electron. Attempts to use the other fundamental property of an electron, its spin, have given rise to a new, rapidly evolving field, known as spintronics, an acronym for spin transport electronics that was first introduced in 1996 to designate a program of the U.S. Defense Advanced Research Projects Agency (DARPA). Initially, the spintronics program involved overseeing the development of advanced magnetic memory and sensors based on spin transport electronics. It was then expanded to included Spins IN Semiconductors (SPINS), in the hope of developing a new paradigm in semiconductor electronics based on the spin degree of freedom of the electron. Studies of spin-polarized transport in bulk and low-dimensional semiconductor structures show promise for the creation of a hybrid device that would combine magnetic storage with gain-in effect, a spin memory transistor. This paper reviews some of the major developments in this field and provides a perspective of what we think will be the future of this exciting field. It is not meant to be a comprehensive review of the whole field but reflects a bias on the part of the authors toward areas that they believe will lead to significant future technologies.

Science, 2001

2015

Conventional electronic devices based on the transport of electrical charge carriers electronsin a semiconductor such as silicon. Spintronics is an emerging field of electronics, where instead of using the charge of electrons, devices work by manipulating electron spin. In this paper describe a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional electronic devices or using the spin alone has the potential advantages of non-volatility , increased fast speed of data processing , decreased electric power consumption, more versatile and increased integration densities compared with conventional semiconductor devices also used in Semiconductor lasers and nanotechnology. Recent research in new materials engineering hold the promise of realizing spintronic devices in near

2013

Spintronics is a new paradigm for electronics which utilizes the electron's spin in addition to its charge for device functionality. It is a rapidly emerging field of science and technology that will most likely have a significant impact on the future of all aspects of electronics as we continue to move into the 21st century. The primary areas for potential applications are information storage, computing, and quantum information. The main objective of this paper is to present a current status of fundamentals of Spintronics including the recent advantages and well established results like MRAM, Quantum computer – only one step remain to come on Earth etc. The primary focus is on basics physical and quantum properties of electron underlying Spin mechanics, Spin polarization, Spin transport through metal and semiconductor, Spin injection etc., principal of GMR with their types and applications is also discussed in details in this

physica status solidi (b), 2006

The ability to manipulate and understand spin polarized materials is a key to constructing spintronic devices, i.e., devices in which the electron's spin and charge are both utilized. Here we review computational methods for predicting the properties of spin-polarized materials at the macro-and nano-limits, and at interfaces.

Superlattices and Microstructures, 2019

Keywords: Spin transfer torque Spin seebeck effect Heterostructure Spin FET A B S T R A C T Over the last decade, the construction and analysis of spintronic devices have been explored. This mini-review focuses on the basic spintronic phenomena such as giant magnetoresistance, tunnel magnetoresistance, spin transfer torque, spin Hall effect, spin Seebeck effect and BGKC (Bruno-Gnanasekar-Karunakaran-Chandramohan) observation. The mechanism of spin-orbit interaction is theoretically discussed. The in-plane wave vector, magnetic field, bias voltage and the delta potential are influenced on spin-polarized transport in heterostructures. The comparison between the role of Dresselhaus and Rashba spin-orbit interaction in the heterostructure is investigated. The principle of spintronic devices (sensors, magnetic random access memory, unipolar spin diode, spin photodiode, spin LED, spin solar cell, spin FET) and spintronic instruments (spin SEM, spin STM) are also explained.

2014

Existing semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission. The relatively new field of semiconductor spintronics seeks, in addition, to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. Spintronics utilizes the electron's spin to create useful sensors, memory and logic devices with properties not possible with charge based devices. This paper reviews the past successes, and the current and future prospects of spintronic materials and devices. Two and three terminal tunnel-junction based sources of highly spin polarized current are described as one component of possible spintronic logic devices, which have the potential for much lower power operation than charge based devices. This describes a new paradigm of electronics based on the spin degree of freedom of the electron. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future.

John Wiley & Sons, Inc. eBooks, 2007

MRS Bulletin, 2003

This article introduces the October 2003 issue of MRS Bulletin on “New Materials for Spintronics.” As a result of quantum mechanics, the carriers in ferromagnetic metals such as Fe, Co, and Ni are spin-polarized due to an imbalance at the Fermi level in the number of spin-up and spin-down electrons. A carrier maintains its spin polarization as long as it does not encounter a magnetic impurity or interact with the host lattice by means of spin-orbit coupling. The discovery of optically induced, long-lived quantum coherent spin states in semiconductors has created a range of possibilities for a new class of devices that utilize spin. This discovery also points to the need for a wider range of spin-polarized materials that will be required for different device configurations. In this issue of MRS Bulletin, we focus on three classes of candidate spintronic materials and review the current state of our understanding of them: III–V and II–VI semiconductors, oxides, and Heusler alloys. The...

International Journal of Scientific Research in Computer Science, Engineering and Information Technology, 2020

We already know that electrons have a charge along with a spin, but until recently, these two have been considered separately. The motion of electric charge is considered as the heart of electronic circuits, and the flow of electron spin plays a crucial role in spintronic circuits. Adding the spin degree of freedom provides new capabilities, new effects, and new functionalities. It all started with the discovery of the Giant Magnetoresistance (GMR) in 1988, which opened the road to an effective control of the motion of the electron charges by focusing on their spin through the orientation of magnetization. Today, spintronics has entered into almost every household as the read sensors for the hard drives present in every desktop and most laptops. Magnetic Random Access Memory (MRAM) and Spin Transfer Torque (STT) RAM are replacing Static RAM where ultra-dense memories are not required. Soon these spintronic memories will penetrate the cell phone market because they offer lower power and are non-volatile. The potential held by Spintronics is very promising for new advancements in science and technology in the 21st century. This paper discusses the evolution of spintronics from the initial research of spin-dependent transport in ferromagnetic materials to the discovery of the giant magnetoresistance and to the most recent advances. Today, this field of research is extending considerably, with very encouraging new technologies like the phenomena of spin transfer, molecular spintronics, nanoscale spintronics, and single-electron spintronics.