A multioctave bandwidth rat-race singly balanced mixer

IEEE Transactions on Microwave Theory and Techniques, 2001

In this paper, a compact and highly linear monolithic-microwave integrated circuit (MMIC) single balanced mixer based on heterojunction interband tunnel diode (HITD) technology working at 1.8 GHz is described. The prototype consists of a pair of HITDs biased at 0 V and a lumped-element directional coupler with arbitrary impedance terminations. The HITDs are in the InGaAs/InAlAs material system lattice matched to InP. The relevant feature of the mixer is the linearity due to the quasi-square-law dc current-voltage ( \ ) characteristics exhibited by the device around zero voltage. A qualitative treatment of the third-order intermodulation product and the conversion loss as a function of the HITDs \ characteristic and the embedding impedance is provided. The design techniques along with a detailed experimental validation are also provided. The prototype working in down-conversion mode, exhibited an third-order intercept point power level of +17.5 dBm, a conversion loss of 11 dB and a 1-dB compression point of +7 dBm at the operative frequency of 1.8 GHz with a +5-dBm local-oscillator drive level.

Microwave and Optical Technology Letters, 2007

symmetrically with respect to the ground. The length of the stub in this case is given by L ϩ W and the width of 0.5 mm. The CPW transmission line has two strip widths of F w1 and F w2 . The gap (g) between the feed line and the ground plane is 0.3 mm to obtain 50⍀ port impedance. The two-step impedance transformer is g /4 transformer for changes the feed line impedance from 47⍀ to 64⍀ at the center frequency of the UWB band. The gap (G) between the Step 1 rectangular patch and the ground plane is optimized at 1.5 mm. Also, the ground short-circuited stub of L s is connected to the Step 4 rectangular left edge for lower resonance frequency enhancement. The upper resonance frequency is dependent on the geometry of the patch element close to the ground plane and feed where the current density is greatest. The optimized values to each physical dimension of the proposed antenna are shown in .

The present work consists of designing a Single Balanced Mixer(SBM) with the 65 nm CMOS technology, this for a 1.9 GHz RF channel, dedicated to wireless applications. This paper shows; the polarization chosen for this structure, models of evaluating parameters of the mixer, then simulation of the circuit in 65nm CMOS technology and comparison with previously treated. Keywords: SBM Mixer, Radio Frequency, 65 nm CMOS Technology, Non-Linearity, Power Consumption.

2010 Proceedings of ESSCIRC, 2010

In this paper, we present a mixer implemented in a 130 nm BiCMOS technology dedicated to 77 GHz automotive radar applications. The architecture is based on a doublebalanced Gilbert cell with integrated transformer-based Baluns. Interconnections between devices, capacitor accesses and Teejunctions are modeled using EM software in order to improve the simulation accuracy. The measurement results of the circuit exhibit a conversion gain and a SSB noise figure of 18.5 dB and 13.8 dB respectively over a 74 to 81 GHz band. Supplied under 2.5 V the power consumption is 80 mW and the ICP1 is -13 dBm. The transformer-based Balun allows a good input matching at the RF input port over a 16 GHz range from 72 to 88 GHz.

2016

Abstract—This letter describes the analysis and measurement of a complementary metal–oxide semiconductor (CMOS) quadra-ture-balanced current-mode mixer with a 90 branch-line hybrid coupler and self-switching current-mode devices. The proposed mixer, using 0.13 m 1P8M CMOS technology, can downconvert a 60 GHz RF signal to a 2 GHz intermediate frequency (IF) signal, with a local-oscillator power of 0 dBm at 58 GHz. In the design, the mixer had a single-end conversion gain of 1 dB and an input-referred 1 dB compression point of 2 dBm. The LO–RF isolation of the mixer can achieve 37 dB while using 3 mA from a supply voltage of 1.2 V. Index Terms—Complementary metal–oxide semiconductor (CMOS), quadrature-balanced mixer, V-band. I.

TELKOMNIKA Telecommunication Computing Electronics and Control, 2019

A multi-section coupled-line balun design for an ultra-wideband diode mixer is presented in this paper. The multi-section coupled-line balun was used to interface with the diode mixer in which it can deliver a good impedance matching between the diode mixer and input/output ports. The mixer design operates with a Local Oscillator (LO) power level of 10 dBm, Radio Frequency (RF) power level of-20 dBm and Intermediate Frequency (IF) of 100 MHz with the balun characteristic of 180° phase shift over UWB frequency (3.1 to 10.6 GHz), the mixer design demonstrated a good conversion loss of-8 to-16 dB over the frequency range from 3.1 to 10.6 GHz. Therefore, the proposed multi-section coupled-line balun for application of UWB mixer showed a good isolation between the mixer's ports.

Microwave and Optical Technology Letters, 2016

A 60 GHz fully integrated double-balanced up-conversion mixer with wide IF bandwidth performance has been designed and fabricated using 90-nm CMOS technology. In order to feed the single-ended IF signal and to reduce the total power consumption, the active balun with an RC-feedback architecture was designed in the Gilbert-cell mixer. From dc to 10 GHz, a phase difference of 58 and a magnitude difference of 1 dB were obtained simultaneously in the proposed RC-feedback active balun. Series inductive-peaking techniques were also adopted to improve the IF bandwidth from DC to 3.8 GHz. The chip area of the mixer is 0.75 mm 2 .

2015

A down conversion RF mixer is designed with 65nm CMOS technology for a different low power consumption applications. Mixer structure comprises a double-balanced Gilbert-Cell with improving linearity method in the RF stage of circuit; all is at a supply voltage of 1.8V and a power of 2.17 mW. The circuit is simulated for different spectrum applications as: 200 MHz mobile users, 1.9 GHz wireless applications, and 20 to 60 GHz commercial satellite and pointtopoint communications. The reported design achieves good values in terms of a radio frequency mixer evaluating parameters such as: Consumed Power, Conversion Gain, Noise Figure and Linearity.

2009 Asia Pacific Microwave Conference, 2009

This paper presents a balanced K-band (18 to 27 GHz) Self-Oscillating Mixer (SOM) with 0.18μm CMOS technology. The proposed SOM employs a push-push configuration for the oscillating function which is designed to operate at K-band. Using the push-push configuration, a K-band frequency of 22.57 GHz is achieved. The proposed SOM uses an RF frequency of 23GHz, and generates a self-oscillation frequency of 11.28 GHz, a push-push frequency of 22.57 GHz and an IF frequency of 386.3 MHz from a 1.8 V power supply. The proposed SOM has an output power of-46 dBm (Pin =-40 dBm) at IF frequency, the gain of-6 dB and the P1dB of-15 dBm.

Microwave and Optical Technology Letters, 2009

In this article, we will demonstrate a low local oscillator (LO) power K-band mixer based on a tunneling diode technology. Due to its unique diode characteristics, no DC supply is needed, whereas an LO power as low as Ϫ2 dBm is required for nominal functionality. The energy-efficient MMIC prototype integrates a pair of heterojunction interband tunnel diodes and a 90°coplanar broadband coupler. The prototype is optimized within the 19 -26 GHz band, with an IF ranging from zero to 7 GHz. In addition, when compared with other mixers, it has the lowest LO power requirement with a conversion loss ranging from 6 to 10 dB, an input compression point of Ϫ3 dBm and an intercept 2nd and 3rd order intermodulation point of 22 and 12 dBm, respectively.