Introduction: Given the importance of happiness in old age, it is important to propose and test a... more Introduction: Given the importance of happiness in old age, it is important to propose and test a multivariate model for relations between its predictor factors. In the present study, the conceptual model of the relationships between spiritual intelligence, psychological hardiness, perceived social support, and happiness was tested in elderlies. Method: The research design was correlational. A sample of two hundred and eleven old woman, were selected through convenient sampling from four cities in Mazandarn province, Iran in the summer of 2016. All participants were asked to complete the Revised Oxford Happiness Inventory, The Spiritual Intelligence Self-Report Inventory, Ahvaz Hardiness Scale, and Multidimensional Scale of Perceived Social Support. The suggested model was tested through covariance-based structural equation modeling and data analysis was performed using the SPSS-22 and Amos-20. Results: The mean age of the sample was 66.83 (SD= 2.72) years old. Using maximum-likelihood estimation and bootstrap procedure, results from structural equation modeling showed that in the elderly women, spiritual intelligence through the mediating role of psychological hardiness and perceived social support, had positive and significant effect on happiness (p<.05). Conclusion: According to the findings of the present study, it can be concluded that in elderly, higher levels of spiritual intelligence can predict higher happiness. Meanwhile, psychological hardness as a personal factor and perceived social support as an environmental factor can clarify the mechanism of the effect of spiritual intelligence on happiness. In other words, spiritual intelligence has a positive effect on the happiness through increasing psychological hardiness and, consequently, increasing perceived social support. These results can be used to design counseling programs for elderly people.
Background & Aim: With the onset of the Corona crisis, nurses suffered from many psychological pr... more Background & Aim: With the onset of the Corona crisis, nurses suffered from many psychological problems that needed interventions. The present study aimed to determinate the effect of process-based cognitive behavioral therapy on rumination and worry of the nurses during the Corona crisis epidemic. The present research method was semi-experimental with pre-test and post-test along with a control group. The statistical population was all the nurses of Shahid Beheshti and Shahid Yahyanejad hospitals in Babol City in 2021. The statistical sample size was 30 people, which were selected by convenience sampling method and randomly assigned by lottery method to two experimental and control groups. The process-based cognitive behavioral therapy was implemented in 10 sessions of 90 minutes for the experimental group, and the control group did not receive any training. Nalen-Hoeksma, Maro's rumination, and Penn state worry questionnaires were used as research tools to collect data. Data analysis was done with descriptive statistics (mean and standard deviation) and univariate covariance analysis using SPSS version 22 software at a statistical level of 0.05. The results showed that process-based cognitive behavioral therapy had an effect on rumination and worry of the studied nurses (P<0.001). The amount of this effect based on the eta coefficient was 0.48 on rumination and 0.53 on worry. According to the results of this research, it is suggested that health-field consultants and planners expand interventions according to process-based cognitive behavioral therapy to increase nurses' awareness of occupational concerns.
Dual trench AlGaN/GaN HEMT on SiC substrate: A novel device to improve the breakdown voltage and high power performance
Physica E-low-dimensional Systems & Nanostructures, Jun 1, 2016
Abstract In this paper, an excellent performance AlGaN/AlN/GaN/SiC High Electron Mobility Transis... more Abstract In this paper, an excellent performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with a dual trench technique (DT-HEMT) is proposed. In the proposed technique, the dual trench between the buffer layer and the nucleation layer is created. Both the trenches are made of Gallium Nitride. A trench is created under the source region to increase the breakdown voltage. In addition, the drain current will improve due to a created trench in below the gate region. The DC and RF characteristics of the DT-HEMT are investigated. Also, the characteristics of the proposed structure compared with the characteristics of a conventional structure (C-HEMT). Our results indicate that the dual trench technique has excellent impacts on the device characteristics, especially on the drain current, breakdown voltage, and maximum output power density. The breakdown voltage, drain current, and maximum power density of DT-HEMT structure improve 56 % , 52 % , and 310 % in comparison with the C-HEMT, respectively. Also, using the dual trench technique, the maximum oscillation frequency, maximum available gain, short channel effect, maximum DC transconductance, and output resistance of the DT-HEMT structure will increase. Therefore, the proposed HEMT structure shows outstanding electrical properties compared to similar devices are based on conventional structures.
A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect
Superlattices and Microstructures, Jun 1, 2018
Abstract Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) laye... more Abstract Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.
Iranian journal of psychiatry and behavioral sciences, Jul 22, 2018
Background: In a revision on the measurement of the implicit theories of intelligence, the Self-T... more Background: In a revision on the measurement of the implicit theories of intelligence, the Self-Theory Scale is suggested. The main purpose of the present study was to examine reliability and validity of the Persian version of the Revised Implicit Theories of Intelligence (Self-Theory) scale in a sample of Iranian high school students. Methods: A sample of 450 unpaid students (255 females and 255 males), aged between 14 and 18 years old (16.73 ± 0.81 years) in the academic year of 2015 to 2016, were selected through multi-stage clustered sampling from the city of Ray, Iran. All participants were asked to complete a demographic form, the Revised Implicit Theories of Intelligence Scale, and the Implicit Theories of Intelligence Scale (ITIS). The findings from confirmatory factor analysis confirmed the factor structure of the Persian version of the Revised Implicit Theories of Intelligence Scale. The convergent validity of the scale was supported by an expected pattern of correlations between the Revised Scale and the ITIS (P < 0.05). The obtained internal consistency coefficients (Cronbach's α) were reasonable. The results suggest that the Persian version of the Revised Implicit Theories of Intelligence (Self-Theory) Scale is a reliable and valid measure in high school students.
Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel
Physica E-low-dimensional Systems & Nanostructures, Nov 1, 2015
Abstract In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (H... more Abstract In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source–drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate–source and gate–drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate–drain and gate–source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.
Faṣlnāmah-i Farhang Mushavirah va Ravān/Darmānī, 2020
The purpose of the present study was to investigate the mediating role of work-family-school role... more The purpose of the present study was to investigate the mediating role of work-family-school role conflicts on the relationship between role-related social support and academic burnout. The design of this study was correlational. A sample of 337 married-parent-employed female university students (mean age: 32.35 ± 5.94 years) who were studying at universities of Neyshabour and Mashhad, Iran, were selected in the academic year of 2017-18. The instruments were the Oldenburg Burnout Inventory-Student Version (Reisa, Xanthopouloub & Tsaousisc, 2015), The Role Related Social Support Scale (Xo & Song, 2013) and the Work-Family-School Role Conflicts Scale (Xo & Song, 2013). Using Maximum-Likelihood estimation and bootstrapping procedure, the results of path analysis showed that the proposed conceptual model have appropriate fit with the data. Role related social support components, showed significant negative direct effects on disengagement. Support from school showed significant negative...
Introduction: Until now, it has not been paid special attention to the stressful effect of percep... more Introduction: Until now, it has not been paid special attention to the stressful effect of perception of effort-reward imbalance in university students. The present study aimed to the construction and validation of student version of the Effort-Reward Imbalance Questionnaire (ERIQ-S) in a sample of Iranian university students. Method: A sample of three hundred and seventy female students, aged between 19 and 35 years old (21.37 ± 1.91 years), were selected through multiple cluster sampling from the University of Mazandaran, Iran. All the participants were asked to complete the ERIQ-S, the student version of Oldenburg Burn-Out Inventory (OLBI-S), and the Academic Justice Scale (AJS). Results: Exploratory Factor Analysis (EFA) showed five factors namely effort, esteem, security, promotion, and over-commitment (29 items) for the ERIQ-S, which explained 60.79% of the effort-reward imbalance construct. The findings of Confirmatory Factor Analysis (CFA) confirmed the factor structure of t...
Mental Health of Physically Disabled Persons Compare To the Normal People: Investigation Based On the Psychopathology and Positive Psychology Approaches
Middle Eastern Journal of Disability Studies, 2015
تأثیر طرحوارههای ناسازگار اولیه بر مولفههای خود-ناتوانسازی: نقش واسطهای حرمتخود ناپایدار
Psychosomatic Medicine, 2020
هدف از پژوهش حاضر، آزمون الگوی مفهومی نقش واسطهای حرمتخود ناپایدار در رابطه بین طرحوارههای نا... more هدف از پژوهش حاضر، آزمون الگوی مفهومی نقش واسطهای حرمتخود ناپایدار در رابطه بین طرحوارههای ناسازگار اولیه و مولفههای خود-ناتوانسازی بود. این پژوهش در چارچوب یک طرح همبستگی انجام شد. شرکتکنندگان 309 نفر دانشجوی دختر دانشگاه مازندران بودند که بر اساس روش نمونهگیری خوشهای چند مرحلهای انتخاب شدند و فرم مشخصات جمعیتشناختی، مقیاس خود-ناتوانسازی، مقیاس حرمتخود ناپایدار و فرم کوتاه پرسشنامه طرحوارههای ناسازگار اولیه را تکمیل کردند. با استفاده از برآورد حداکثر درستنمایی و روش خود-گردانسازی، یافتههای حاصل از تحلیل مسیر نشان داد الگوی پیشنهادی با دادههای پژوهش برازش مناسب دارد و طرحوارههای معیارهای سرسختانه/عیبجویی افراطی، شکست و نقص/شرم از طریق حرمتخود ناپایدار، تأثیر مثبت و معنیداری بر خود-ناتوانسازی ادعایی و رفتاری داشت. بر اساس یافتههای پژوهش حاضر میتوان چنین نتیجه گرفت که وجود طرحواره ناسازگار اولیه سرسختانه/عیبجویی افراطی، شکست و نقص/شرم توانست خود-ناتوانسازی را پیشبینی کند. در این میان، حرمتخود ناپایدار به عنوان یک عامل شخصی، توانست سازوکار تأثیر طرحوار...
Introduction: Although cancer affects the person�s mental health, sense of disappointment and l... more Introduction: Although cancer affects the person�s mental health, sense of disappointment and lack of hope seem to be the most major problem for the patient at the time. The main purpose of this study was to investigate the effects of spiritual well-being, psychological resilience, and perceived social support on hope in cancer patients. Materials and Methods: In this descriptive-analytical study, among women with cancer aged between 17 and 75 years old who referred to Baqban treatment center of Sari, 198 women with cancer diagnosis were selected through convenience sampling method. All participants were asked to complete the Spiritual Well-Being Scale, Ahvaz Hardiness Scale, Multidimensional Scale of Perceived Social Support, and Snyder's Hope Scale. Data analysis was performed using descriptive statistics, SPSS software version 22.0 and Amos-20.0 statistics package. Results: Using structural equation modeling, the results showed that the direct (P=0.001), and indirect (P=0.0...
Triple tooth AlGaN/GaN HEMT on SiC substrate: A novel structure for high-power applications
Journal of the Korean Physical Society, 2017
In this paper, a AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) to reduce the electri... more In this paper, a AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) to reduce the electric field is suggested. The main idea of this work is to improve the Direct Current (DC) and Radio Frequency (RF) properties of device by modifying the depletion region in the channel. The proposed structure consists of a floating metal like a comb with triple tooth which is located in the space between the gate and drain and inside the buffer layer. We called the proposed structure as triple tooth HEMT (TT-HEMT). The RF and DC characteristics of the proposed structure are studied using numerical simulations. The breakdown voltage (VBR) increases to 169.5 V for the proposed structure in comparison with 103 V for the conventional HEMT (C-HEMT) due to the modified electric field distribution in the channel of the TT-HEMT structure. The maximum output power density (Pmax) of the TT-HEMT structure is 60.4% greater than that of the C-HEMT. The optimized results show that the maximum oscillation frequency (fmax) and cut-off frequency (fT) of the proposed structure improve 111% and 26.5%, respectively compared to the C-HEMT structure. In addition, the maximum available gain (MAG) of the TT-HEMT structure is obtained 8.5 dB higher than that of the C-HEMT structure at the frequency of 40 GHz. The optimal results show that whatever the number of teeth on metal increases, the depletion region in the channel is modified more and the breakdown voltage increases, as well. Besides, the output power density (Pmax) is improved with the increasing number of teeth on metal (N). This characteristic is also true, for the cut-off frequency (fT ), the maximum oscillation frequency (fmax) and the maximum available gain (MAG) of the proposed structure. However, the drain current (ID) of the proposed structure is reduced.
A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect
Superlattices and Microstructures, 2018
Abstract Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) laye... more Abstract Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.
Iranian journal of psychiatry and behavioral sciences, 2016
The aim of the present study was to test a structural model of hypothesized relationships between... more The aim of the present study was to test a structural model of hypothesized relationships between spiritual well-being, intervening variables of personal worth of self and others, commitment to relationship stability, commitment to relationship growth, positive interaction/appreciation, communication/conflict resolution, time spent together, and, the dependent variable, dyadic adjustment. Two hundred and sixty eight (171 females and 97 males) married parent subjects were selected by convenience sampling from three universities in Mazandaran, Iran, to take part in this study. They were all volunteers and were not paid and their age range was 23 to 47 (31.07 ± 4.37 years). All participants were asked to complete the spiritual well-being scale (SWBS), family strengths scale (FSS) and revised dyadic adjustment scale (RDAS). The results from structural equation modeling confirmed a hierarchy for the development of family strengths, and indicated that spiritual well-being and strength in ...
Dual trench AlGaN/GaN HEMT on SiC substrate: A novel device to improve the breakdown voltage and high power performance
Physica E: Low-dimensional Systems and Nanostructures, 2016
Abstract In this paper, an excellent performance AlGaN/AlN/GaN/SiC High Electron Mobility Transis... more Abstract In this paper, an excellent performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with a dual trench technique (DT-HEMT) is proposed. In the proposed technique, the dual trench between the buffer layer and the nucleation layer is created. Both the trenches are made of Gallium Nitride. A trench is created under the source region to increase the breakdown voltage. In addition, the drain current will improve due to a created trench in below the gate region. The DC and RF characteristics of the DT-HEMT are investigated. Also, the characteristics of the proposed structure compared with the characteristics of a conventional structure (C-HEMT). Our results indicate that the dual trench technique has excellent impacts on the device characteristics, especially on the drain current, breakdown voltage, and maximum output power density. The breakdown voltage, drain current, and maximum power density of DT-HEMT structure improve 56 % , 52 % , and 310 % in comparison with the C-HEMT, respectively. Also, using the dual trench technique, the maximum oscillation frequency, maximum available gain, short channel effect, maximum DC transconductance, and output resistance of the DT-HEMT structure will increase. Therefore, the proposed HEMT structure shows outstanding electrical properties compared to similar devices are based on conventional structures.
Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel
Physica E: Low-dimensional Systems and Nanostructures, 2015
Abstract In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (H... more Abstract In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source–drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate–source and gate–drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate–drain and gate–source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.
This study aimed at investigating the simple and multiple relationships between personality trait... more This study aimed at investigating the simple and multiple relationships between personality traits and addiction potential in university students. Methods: Three hundred and forty two students were selected by cluster sampling from the Shahid Chamran University (Iran). The scales used for this descriptive study were NEO-FFI personality inventory and Iranian Addiction Potential Scale (IAPS). To analyze the data, we used descriptive and inferential statistic test via spss-13. Results: There were simple and multiple relationships between personality traits and addiction potential. Multiple regression analysis (stepwise method) showed that neuroticism, conscientiousness and agreeableness had significant multiple correlation with addiction potential (F=32.89, P< 0.001). The components of openness and extroversion eliminated from regression. Conclusion: Personality traits predicted addiction potential in university students. The most important suggestion of this research was to pay attention scientifically to personality characters as a fundamental factor of this difficulty, rather than just emphasizing on the cessation of drug or alcohol using.
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