There are few studies examining the relationship between psychopathology and positive experiences... more There are few studies examining the relationship between psychopathology and positive experiences and traits. Although initial studies suggest persons with posttraumatic stress disorder (PTSD) are at increased risk for excessive social anxiety, there have been no studies to date evaluating how these conditions might interact to affect positive experiences and traits. Using self-report scales, informant ratings, and experiencesampling methodologies, we examined the association of social anxiety with well-being and character strengths in veterans with and without PTSD. Controlling for PTSD and trait negative affect, social anxiety was negatively related to global ratings of well-being and character strengths. Social anxiety also accounted for incremental variance in day-to-day well-being (i.e., daily affect balance, percentage of pleasant days, positive social activity, self-esteem, gratitude) over a 14-day assessment period. Although veterans with PTSD reported lower levels of global and daily well-being and character strengths than veterans without PTSD, a diagnosis of PTSD failed to exhibit unique relationships with these constructs. Building on a growing body of work, these data suggest that social anxiety is uniquely associated with disturbances in positive experiences, events, and traits. Our findings support the value of directly addressing social anxiety in the study and treatment of PTSD.
A method to fabricate silicon-on-insulator (SOI) device sized islands, using Epitaxiai Lateral Ov... more A method to fabricate silicon-on-insulator (SOI) device sized islands, using Epitaxiai Lateral Overgrowth (ELO) from the Selective Epitaxial Growth (SEG) of Silicon, has =96.3% stacking fault-free SO1 islands when SiO2 was used as the field insulator. When a nitrided thermal SiO 2 was used =99% of the small islands were defect-free. Islands with rounded comers and nitrided oxide had stacking fault defects of less than 500/cm 2.
A method to fabricate silicon-on-insulator (SOI) device sized islands, using Epitaxiai Lateral Ov... more A method to fabricate silicon-on-insulator (SOI) device sized islands, using Epitaxiai Lateral Overgrowth (ELO) from the Selective Epitaxial Growth (SEG) of Silicon, has =96.3% stacking fault-free SO1 islands when SiO2 was used as the field insulator. When a nitrided thermal SiO 2 was used =99% of the small islands were defect-free. Islands with rounded comers and nitrided oxide had stacking fault defects of less than 500/cm 2.
534 N.CJ. Int'l L. & Com. Reg. [Vol. 15 sions.9 Litigating the same issue before two courts ... more 534 N.CJ. Int'l L. & Com. Reg. [Vol. 15 sions.9 Litigating the same issue before two courts can produce conflicting decisions. This problem is avoided by giving binding ef-fect to the judgment of the first court. Yet another benefit of res judicata is that it provides a final ending to ...
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