This paper presents a study of Sn/PS/p-Si heterojunction device which is fabricated by growing Sn... more This paper presents a study of Sn/PS/p-Si heterojunction device which is fabricated by growing Sn thin film onto p-type porous Si substrate by using thermal evaporation deposition and electrochemical etching (ECE) in crystalline p-Si method. Effect etching current density on the morphology of the porous silicon surface is checked using atomic force microscopy AFM. Current–voltage (I–V), capacitance–voltage (C– V) characteristics. The ideality factor and series resistance are found to be large than the one (11.18 and 25 kΩ) respectively by the analysis of the dark I–V characteristics of Sn/PS/p-Si. While the analysis of the dark C–V, the built-in voltage and carrier's concentrations are found to be 0.59V and 1.1×10 17 cm-3 respectively. These characteristics are interpreted by assuming the abrupt heterojunction model from C-V measurement. The barrier height potential is measured by both I–V and C–V which is found to be 0.74eV. The Energy band diagram of heterojunction relevant by I-V and C-V measurements is sketched.
This paper presents a study of Sn/PS/p-Si heterojunction device which is fabricated by growing Sn... more This paper presents a study of Sn/PS/p-Si heterojunction device which is fabricated by growing Sn thin film onto p-type porous Si substrate by using thermal evaporation deposition and electrochemical etching (ECE) in crystalline p-Si method. Effect etching current density on the morphology of the porous silicon surface is checked using atomic force microscopy AFM. Current–voltage (I–V), capacitance–voltage (C– V) characteristics. The ideality factor and series resistance are found to be large than the one (11.18 and 25 kΩ) respectively by the analysis of the dark I–V characteristics of Sn/PS/p-Si. While the analysis of the dark C–V, the built-in voltage and carrier's concentrations are found to be 0.59V and 1.1×10 17 cm-3 respectively. These characteristics are interpreted by assuming the abrupt heterojunction model from C-V measurement. The barrier height potential is measured by both I–V and C–V which is found to be 0.74eV. The Energy band diagram of heterojunction relevant by I-V and C-V measurements is sketched.
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Papers by Intesar Hashim