Model for oxygen recombination on silicon-dioxide surfaces. II - Implications toward reentry heating
30th Aerospace Sciences Meeting and Exhibit, 1992
This paper briefly reviews the model for recombination of oxygen on a silicon-dioxide surface pre... more This paper briefly reviews the model for recombination of oxygen on a silicon-dioxide surface presented in detail in a previous paper. New data supporting the model is also presented. The ramifications of the model toward the production of excited molecular oxygen is examined as it pertains to surface heating. A reentry simulation is given and compared to STS-2 reentry data, and conclusions are drawn as to the implications of the recombination model toward reentry heating. A possible buffering of the heating above a critical temperature associated with the physics of the model is also discussed.
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